Si1050X Vishay Siliconix N-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) () ID (A) 0.086 at VGS = 4.5 V 1.34a 0.093 at VGS = 2.5 V 1.29 0.102 at VGS = 1.8 V 1.23 0.120 at VGS = 1.5 V 0.7 Qg (Typ.) 7.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices SC-89 (6-LEADS) D 1 6 D D 5 2 D Q XX YY Marking Code Lot Traceability and Date Code G 3 4 S Part # Code Top View Ordering Information: Si1050X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipationa Symbol VDS VGS TA = 25 °C TA = 70 °C TA = 25 °C TA = 25 °C TA = 70 °C ID IDM IS PD TJ, Tstg Operating Junction and Storage Temperature Range Limit 8 ±5 Unit V 1.34b, c 1.07b, c 6 A 0.2b, c 0.236b, c 0.151b, c - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Symbol t 5 s Steady State RthJA Typical 440 540 Maximum 530 650 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 650 °C/W. Document Number: 73896 S10-2544-Rev. D, 08-Nov-10 www.vishay.com 1 Si1050X Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 8 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ VGS(th) Temperature Coefficient VGS(th)/TJ ID = 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 5 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductance RDS(on) gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time tr mV/°C - 2.55 0.35 0.9 V ± 100 nA VDS = 8 V, VGS = 0 V 1 VDS = 8 V, VGS = 0 V, TJ = 85 °C 10 VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 1.34 A 6 µA A 0.071 0.086 VGS = 2.5 V, ID = 1.29 A 0.078 0.093 VGS = 1.8 V, ID = 1.23 A 0.085 0.102 VGS = 1.5 V, ID = 0.76 A 0.092 0.120 VDS = 4 V, ID = 1.34 A 4.12 VDS = 4 V, VGS = 0 V, f = 1 MHz 190 S 585 pF 130 VDS = 4 V, VGS = 5 V, ID = 1.34 A VDS = 4 V, VGS = 4.5 V, ID = 1.34 A 7.7 11.6 7.1 10.7 1.14 nC 1.69 f = 1 MHz td(on) td(off) V 18.2 VDD = 4 V, RL = 3.6 ID 1.1 A, VGEN = 4.5 V, Rg = 1 tf 3.5 4.6 6.8 10.2 35 53 25 37.5 6 9 0.8 1.2 V 18.5 28 nC 3.7 5.7 ns Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta Body Diode Voltage ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 6 IS = 1.0 A IF = 1.0 A, dI/dt = 100 A/µs 6.7 A ns 11.8 Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73896 S10-2544-Rev. D, 08-Nov-10 Si1050X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 6 3.0 VGS = 5 V thru 2 V 2.5 VGS = 1.5 V 4 3 2 I D - Drain Current (A) I D - Drain Current (A) 5 2.0 TC = 125 °C 1.5 1.0 1 TC = 25 °C 0.5 VGS = 1.0 V 0 0.0 0.6 1.2 1.8 TC = - 55 °C 0.0 0.0 2.4 0.4 VDS - Drain-to-Source Voltage (V) 1.2 1.6 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics curves vs. Temp. 1000 0.15 800 0.12 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.8 VGS = 1.8 V VGS = 1.5 V VGS = 2.5 V 0.09 VGS = 4.5 V Ciss 600 400 Coss 0.06 200 Crss 0 0.03 0 1 2 3 4 5 0 6 1 ID - Drain Current (A) 2 3 4 5 6 7 8 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 5 1.6 4 VDS = 4 V 3 VGS = 6.4 V 2 1 (Normalized) 1.4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) ID = 1.34 A VGS = 4.5 V, ID = 1.34 A VGS = 1.5 V, ID = 0.76 A 1.2 1.0 VGS = 2.5 V, ID = 1.30 A VGS = 1.8 V, ID = 1.23 A 0.8 0 0 2 4 6 Qg - Total Gate Charge (nC) Qg - Gate Charge Document Number: 73896 S10-2544-Rev. D, 08-Nov-10 8 10 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si1050X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 0.16 10 R DS(on) - On-Resistance (Ω) ID = 1.34 A I S - Source Current (A) 1 TJ = 25 °C TJ = 150 °C 0.1 0.01 0.001 0.0 0.12 TA = 125 °C 0.08 TA = 25 °C 0.04 0.00 0.2 0.6 0.4 0.8 0 1.0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage RDS(on) vs VGS vs Temperature 0.9 5.0 0.8 ID = 250 µA Power (W) VGS(th) Variance (V) 4.0 0.7 0.6 0.5 3.0 2.0 0.4 1.0 0.3 0.2 - 50 - 25 0 25 50 75 100 125 0 150 0.001 0.1 0.01 TJ - Temperature (°C) 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power 10 1 ms Limited by RDS(on)* 10 ms I D - Drain Current (A) 1 100 ms 1s 0.1 10 s DC 0.01 TA = 25 °C Single Pulse 0.001 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73896 S10-2544-Rev. D, 08-Nov-10 Si1050X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: 0.01 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 540 °C/W 0.001 3. TJM - TA = PDMZthJA (t) Single Pulse 4. Surface Mounted 0.0001 10-4 10-3 10-2 1 10-1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73896. Document Number: 73896 S10-2544-Rev. D, 08-Nov-10 www.vishay.com 5 Package Information www.vishay.com Vishay Siliconix SC-89 6-Leads (SOT-563F) E1/2 2 3 aaa D e1 4 C 2x 4 A B D 6 5 4 SECTION B-B C E/2 2 E E1 3 6 2x DETAIL “A” aaa C 1 5 2 2x 3 bbb C e B 6x b 4 ddd M C A–B D L1 A1 L A A1 SEE DETAIL “A” Notes 1. Dimensions in millimeters. 2. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed 0.15 mm per dimension E1 does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed 0.15 mm per side. 3. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body. 4. Datums A, B and D to be determined 0.10 mm from the lead tip. 5. Terminal numbers are shown for reference only. 6. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. Revision: 11-Aug-14 DIM. MILLIMETERS MIN. NOM. A 0.56 0.58 MAX. 0.60 A1 0 0.02 0.10 b 0.15 0.22 0.30 0.18 c 0.10 0.14 D 1.50 1.60 1.70 E 1.50 1.60 1.70 1.25 E1 1.15 1.20 e 0.45 0.50 0.55 e1 0.95 1.00 1.05 L 0.25 0.35 0.50 L1 0.10 0.20 0.30 C14-0439-Rev. C, 11-Aug-14 DWG: 5880 Document Number: 71612 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead 0.051 0.012 0.020 (0.300) (0.500) 0.019 (0.478) 0.031 (0.798) 0.069 (1.753) (1.300) 0.051 (0.201) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72605 Revision: 21-Jan-08 www.vishay.com 21 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000