Si1070X Datasheet

Si1070X
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
RDS(on) ()
ID (A)
Qg (Typ.)
0.099 at VGS = 4.5 V
1.2a
1.0
3.5
0.140 at VGS = 2.5 V
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
SC-89 (6-LEADS)
1
6
D
D
2
5
D
Marking Code
U
G
3
4
XX
YY
D
Lot Traceability
and Date Code
S
Part # Code
Top View
Ordering Information: Si1070X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Avalanche Current
Repetitive Avalanche Energy
Continuous Source-Drain Diode Current
Maximum Power Dissipationa
L = 0.1 mH
TA = 25 °C
TA = 25 °C
TA = 70 °C
1b, c
A
6
IAS
9
EAS
4.01
mJ
IS
0.2b, c
A
0.236
PD
b, c
W
0.151b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
V
1.2b, c
ID
IDM
Pulsed Drain Current
Unit
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Symbol
t 5 s
Steady State
RthJA
Typical
Maximum
440
530
540
650
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 650 °C/W.
Document Number: 73893
S10-2542-Rev. D, 08-Nov-10
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1
Si1070X
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
V
24.5
ID = 250 µA
mV/°C
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
1.55
V
IGSS
VDS = 0 V, VGS = ± 12 V
± 100
nA
VDS = 30 V, VGS = 0 V
1
nA
VDS = 30 V, VGS = 0 V, TJ = 85 °C
10
µA
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductance
RDS(on)
gfs
VDS =  5 V, VGS = 4.5 V
- 3.81
0.7
6
A
VGS = 4.5 V, ID = 1.2 A
0.082
0.099
VGS = 2.5 V, ID = 1.0 A
0.116
0.140
VDS = 15 V, ID = 1.2 A
5

S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
385
VDS = 15 V, VGS = 0 V, f = 1 MHz
55
VDS = 15 V, VGS = 5 V, ID = 1.2 A
3.8
8.3
3.5
4.1
30
VDS = 15 V, VGS = 4.5 V, ID = 4.6 A
td(off)
1.1
nC
0.98
f = 1 MHz
td(on)
tr
pF
VDD = 15 V, RL = 15 
ID  1.0 A, VGEN = 4.5 V, Rg = 1 
tf

4.7
6.2
10
15
22
33
14
21
6
9
6
A
0.8
1.2
V
nC
ns
Drain-Source Body Diode Characteristics
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
IS = 1.2 A
Body Diode Reverse Recovery Time
trr
19.4
29.5
Body Diode Reverse Recovery Charge
Qrr
18.43
27.5
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 3.8 A, dI/dt = 100 A/µs
16.4
ns
3
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73893
S10-2542-Rev. D, 08-Nov-10
Si1070X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
6
3.0
VGS = 5 V thru 3 V
2.4
VGS = 2.5 V
I D - Drain Current (A)
I D - Drain Current (A)
5
4
3
2
1.8
1.2
TC = 125 °C
VGS = 2 V
0.6
1
TC = 25 °C
TC = - 55 °C
VGS = 1.5 V
0
0.0
0.6
1.2
1.8
0.0
0.0
2.4
0.6
VDS - Drain-to-Source Voltage (V)
2.4
3.0
Transfer Characteristics Curves vs. Temp.
0.30
500
0.25
Ciss
C - Capacitance (pF)
400
0.20
VGS = 2.5 V
0.15
VGS = 4.5 V
0.10
300
200
Coss
100
0.05
0.00
Crss
0
0
1
2
3
4
5
6
0
6
I D - Drain Current (A)
12
18
24
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
5
1.8
VGS = 4.5 V
ID = 1.2 A
1.6
ID = 1.2 A
VDS = 15 V
3
VGS = 24 V
2
1
1.4
(Normalized)
4
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
1.8
VGS - Gate-to-Source Voltage (V)
Output Characteristics
R DS(on) - On-Resistance (Ω)
1.2
VGS = 2.5 V
ID = 1 A
1.2
1.0
0.8
0
0
1
2
3
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 73893
S10-2542-Rev. D, 08-Nov-10
4
5
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si1070X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10
0.24
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 1.2 A
1
TJ = 150 °C
0.1
TJ = 25 °C
0.01
0.18
TA = 125 °C
0.12
TA = 25 °C
0.06
0.00
0.001
0
0.2
0.4
0.6
0.8
1
0
1
VSD - Source-to-Drain Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
RDS(on) vs. VGS vs. Temperature
5.0
1.5
1.4
ID = 250 µA
4.0
Power (W)
VGS(th) (V)
1.2
1.0
3.0
2.0
0.8
0.6
- 50
1.0
0.0
- 25
0
25
50
75
100
125
150
0.01
0.1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
1000
10
100 µs
Limited by R DS(on)*
1 ms
I D - Drain Current (A)
1
10 ms
100 ms
0.1
1s
10 s
0.01
DC
BVDSS Limited
TA = 25 ° C
Single Pulse
0.001
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 73893
S10-2542-Rev. D, 08-Nov-10
Si1070X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
10-1
0.2
0.1
0.05
10-2
Notes:
0.02
PDM
t1
t2
1. Duty Cycle, D =
10-3
t1
t2
2. Per Unit Base = RthJA = 540 ° C/W
Single Pulse
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-4
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73893.
Document Number: 73893
S10-2542-Rev. D, 08-Nov-10
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Package Information
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Vishay Siliconix
SC-89 6-Leads (SOT-563F)
E1/2
2
3
aaa
D
e1
4
C
2x
4
A
B
D
6
5
4
SECTION B-B
C
E/2
2
E
E1
3
6
2x
DETAIL “A”
aaa
C
1
5
2
2x
3
bbb
C
e
B
6x b
4
ddd
M
C
A–B D
L1
A1
L
A
A1
SEE DETAIL “A”
Notes
1. Dimensions in millimeters.
2. Dimension D does not include mold flash, protrusions or gate
burrs. Mold flush, protrusions or gate burrs shall not exceed
0.15 mm per dimension E1 does not include interlead flash
or protrusion, interlead flash or protrusion shall not exceed
0.15 mm per side.
3. Dimensions D and E1 are determined at the outmost extremes
of the plastic body exclusive of mold flash, the bar burrs, gate
burrs and interlead flash, but including any mismatch between
the top and the bottom of the plastic body.
4. Datums A, B and D to be determined 0.10 mm from the lead tip.
5. Terminal numbers are shown for reference only.
6. These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
Revision: 11-Aug-14
DIM.
MILLIMETERS
MIN.
NOM.
A
0.56
0.58
MAX.
0.60
A1
0
0.02
0.10
b
0.15
0.22
0.30
0.18
c
0.10
0.14
D
1.50
1.60
1.70
E
1.50
1.60
1.70
1.25
E1
1.15
1.20
e
0.45
0.50
0.55
e1
0.95
1.00
1.05
L
0.25
0.35
0.50
L1
0.10
0.20
0.30
C14-0439-Rev. C, 11-Aug-14
DWG: 5880
Document Number: 71612
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead
0.051
0.012
0.020
(0.300)
(0.500)
0.019
(0.478)
0.031
(0.798)
0.069
(1.753)
(1.300)
0.051
(0.201)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72605
Revision: 21-Jan-08
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Legal Disclaimer Notice
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Disclaimer
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000