Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D114
1PS181
High-speed double diode
Product data sheet
Supersedes data of April 1996
1996 Sep 03
NXP Semiconductors
Product data sheet
High-speed double diode
1PS181
FEATURES
DESCRIPTION
• Small plastic SMD package
The 1PS181 consists of two
high-speed switching diodes with
common anodes, fabricated in planar
technology, and encapsulated in the
small plastic SMD SC59 package.
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 80 V
• Repetitive peak reverse voltage:
max. 85 V
PINNING
PIN
DESCRIPTION
1
cathode (k1)
2
cathode (k2)
3
common anode
• Repetitive peak forward current:
max. 500 mA.
2
1
APPLICATIONS
2
• High-speed switching in e.g.
surface mounted circuits.
1
3
3
Top view
MAM082
Marking code: A3T.
Fig.1 Simplified outline (SC59) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VRRM
repetitive peak reverse voltage
−
85
V
VR
continuous reverse voltage
−
80
V
IF
continuous forward current
single diode loaded; see Fig.2;
note 1
−
215
mA
double diode loaded; see Fig.2;
note 1
−
125
mA
−
500
mA
t = 1 μs
−
4
A
t=1s
−
0.5
A
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current
square wave; Tj = 25 °C prior to
surge
Ptot
total power dissipation
−
250
Tstg
storage temperature
Tamb = 25 °C; note 1
−65
+150
°C
Tj
junction temperature
−
150
°C
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 03
2
mW
NXP Semiconductors
Product data sheet
High-speed double diode
1PS181
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
IF = 1 mA
610
−
mV
IF = 10 mA
740
−
mV
IF = 50 mA
−
1.0
V
IF = 100 mA
−
1.2
V
Per diode
VF
IR
forward voltage
reverse current
see Fig.3
see Fig.4
VR = 25 V
−
VR = 80 V
−
VR = 25 V; Tj = 150 °C
−
30
μA
VR = 80 V; Tj = 150 °C
−
100
μA
30
0.5
nA
μA
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.5
−
2.0
pF
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured
at IR = 1 mA; see Fig.6
−
4
ns
Vfr
forward recovery voltage
when switched from IF = 10 mA;
tr = 20 ns; see Fig.7
−
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
thermal resistance from junction to tie-point
Rth j-a
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 03
3
VALUE
UNIT
250
K/W
500
K/W
NXP Semiconductors
Product data sheet
High-speed double diode
1PS181
GRAPHICAL DATA
MBD033
300
MBG382
300
handbook, halfpage
IF
(mA)
IF
(mA)
(1)
200
(2)
(3)
200
single diode loaded
double diode loaded
100
100
0
0
0
100
T amb ( oC)
200
Maximum permissible continuous forward
current as a function of ambient temperature.
Fig.3
MBG380
2
10halfpage
handbook,
1
2
VF (V)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board.
Fig.2
0
Forward current as a function of
forward voltage.
MBH191
2.5
Cd
(pF)
handbook, halfpage
IR
(μA)
2.0
10
1.5
(1)
1
(2)
(3)
1.0
10
1
0.5
10 2
100
0
Tj (oC)
0
0
200
(1) VR = 80 V; maximum values.
(2) VR = 80 V; typical values.
(3) VR = 25 V; typical values.
Fig.4
1996 Sep 03
5
10
15
20
VR (V)
25
f = 1 MHz; Tj = 25 °C.
Reverse current as a function of
junction temperature.
Fig.5
4
Diode capacitance as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
High-speed double diode
1PS181
handbook, full pagewidth
tr
tp
t
D.U.T.
10%
IF
RS = 50 Ω
IF
SAMPLING
OSCILLOSCOPE
t rr
t
R i = 50 Ω
V = VR I F x R S
MGA881
(1)
90%
VR
input signal
output signal
(1) IR = 1 mA.
Fig.6 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
V
I
90%
R = 50 Ω
S
D.U.T.
OSCILLOSCOPE
V fr
R i = 50 Ω
10%
MGA882
t
tr
input
signal
Fig.7 Forward recovery voltage test circuit and waveforms.
1996 Sep 03
5
t
tp
output
signal
NXP Semiconductors
Product data sheet
High-speed double diode
1PS181
PACKAGE OUTLINE
1.65
1.25
0.50
0.35
0.2 M A
1.3
1.0
A
3
3.0
2.5
1.7
1.3
2
1
2.1
1.7
0.6
0.2
0.26
0.10
3.1
2.7
msa313
Dimensions in mm.
Fig.8 SC59.
1996 Sep 03
0.100
0.013
6
NXP Semiconductors
Product data sheet
High-speed double diode
1PS181
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
1996 Sep 03
7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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© NXP B.V. 2009
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Printed in The Netherlands
1996 Sep 03
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