InGaAs linear image sensors G11608 series Wide spectral response range, near infrared image sensors (0.5 to 1.7 μm) The G11608 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. The G11608 series consists of an InGaAs photodiode array with enhanced sensitivity at shorter wavelengths, and CMOS chip that contains a charge amplifier array, a shift register, and a timing generator. The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs photodiode array. Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation. The signal processing circuit on the CMOS chip offers two levels of conversion efficiency (CE) that can be selected by the external voltage to meet the application. Features Applications Wide spectral response range (0.5 to 1.7 μm) Near infrared multichannel spectrophotometry Low noise Radiation thermometry Two selectable conversion efficiencies Non-destructive inspection Anti-saturation circuit CDS (correlated double sampling) circuit*1 Built-in thermistor Simple operation (by built-in timing generator)*2 High resolution: 25 μm pitch (G11608-512DA) *1: A major source of noise in charge amplifiers is the reset noise generated when the integration capacitance is reset. A CDS (correlated double sampling) circuit greatly reduces this reset noise by holding the signal immediately after reset to find the noise differential. *2: Different signal timings must be properly set in order to operate a shift register. In conventional image sensor operation, external PLDs (programmable logic device) are used to input the required timing signals. However, the G11608 series image sensors internally generate all timing signals on the CMOS chip just by supplying CLK and RESET pulses. This makes it simple to set the timings. Selection guide Type no. G11608-256DA G11608-512DA Cooling Image area (mm) Non-cooled 12.8 × 0.50 Number of total pixels 256 512 Number of effective pixels 256 512 Applicable driver circuit C11513-01 Structure Type no. G11608-256DA G11608-512DA Pixel size [μm (H) × μm (V)] 50 × 500 25 × 500 Pixel pitch (μm) 50 25 Package Window material 22-pin ceramic Borosilicate glass without anti-reflective coating www.hamamatsu.com 1 InGaAs linear image sensors G11608 series V Details of photosensitive area (unit: μm) x H Number of pixels x H V 256 30 50 500 512 10 25 500 KMIRC0057EA Block diagram CLK RESET Timing generator Vdd Vss INP PDN Vinp Fvref Cf_select Bias generator AD_sp AD_trig Shift register Address switch Readout circuit Charge amplifier + sample-and-hold circuit CMOS IC Video InGaAs photodiode array Temperature monitor KMIRC0058EA 2 InGaAs linear image sensors G11608 series Absolute maximum ratings Parameter Supply voltage Clock pulse voltage Reset pulse voltage Gain selection terminal voltage Operating temperature*3 Storage temperature*3 Soldering conditions Thermistor power disspation Symbol Vdd, INP, Fvref Vinp, PDN Vϕ V(RES) Vcfsel Topr Tstg Pth Condition Min. Typ. Max. Unit Ta=25 °C -0.3 - +6 V Ta=25 °C Ta=25 °C Ta=25 °C Non dew condensation Non dew condensation -0.3 -0.3 -0.3 -10 -20 260 °C or less, within 5 s - +6 +6 +6 +60 +70 V V V °C °C mW - 400 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. *3: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. Recommended terminal voltage (Ta=25 °C) Parameter Supply voltage Differential reference voltage Video line reset voltage Input stage amplifier reference voltage Photodiode cathode voltage Ground High Clock pulse voltage Low High Reset pulse voltage Low Symbol Vdd Fvref Vinp Min. 4.7 1.1 3.9 Typ. 5.0 1.2 4.0 Max. 5.3 1.3 4.1 Unit V V V INP 3.9 4.0 4.1 V PDN GND 3.9 4.7 0 4.7 0 4.0 0 5.0 0 5.0 0 4.1 5.3 0.4 5.3 0.3 V V Min. Typ. Max. Unit 0.1 0.1 9.0 - 45 85 1 f 4.0 1.2 Fvref 5 Vdd GND 10.0 3950 80 120 1 1 1 1 5 5 11.0 - Vϕ V(RES) V V Electrical characteristics (Ta=25 °C) Parameter G11608-512DA G11608-256DA Consumption current Operation frequency Video data rate Video output voltage High Low Output offset voltage Output impedance AD_trig, AD_sp pulse High voltage Low Thermistor resistance Thermistor B constant*4 Symbol I(Vdd) Ifvref Ivinp Iinp Ipdn fop DR VH VL Vos Zo Vtrig, Vsp Rth B mA mA mA mA mA MHz MHz V V V kΩ V kΩ K *4: T1=25 °C, T2=50 °C 3 InGaAs linear image sensors G11608 series Electrical and optical characteristics (Ta=25 °C, Vdd=5 V, INP=Vinp=PDN=4 V, Fvref=1.2 V, Vϕ=5 V, f=1 MHz) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Conversion efficiency* 5 Symbol λ λp S CE Photoresponse nonuniformity*6 PRNU Saturation charge Qsat Saturation voltage G11608-256DA Dark output G11608-512DA G11608-256DA Dark current G11608-512DA Temperature coefficient of dark output (dark current) Vsat λ=λp Cf=10 pF Cf=1 pF CE=16 nV/eCE=160 nV/e- Min. 0.8 168 16.8 2.7 -1 -0.5 -10 -5 Typ. 0.5 to 1.7 1.55 1.0 16 160 ±3 175 17.5 2.8 ±0.1 ±0.05 ±1 ±0.5 Max. ±5 1 0.5 10 5 VD CE=16 nV/e- ID CE=16 nV/e- - CE=16 nV/e- - 1.1 - CE=16 nV/eCE=160 nV/eCE=16 nV/eCE=16 nV/e- 6750 - 200 300 14000 - 400 500 1 Readout noise*7 N Dynamic range Defective pixels*8 D *5: *6: *7: *8: Condition - Unit μm μm A/W nV/e% MeV V/s pA times/°C μVrms % Refer to pin connection when changing conversion efficiency. 50% of saturation, integration time 10 ms, after dark output subtraction, excluding first and last pixels Integration time=10 ms (CE=16nV/e-), 1 ms (CE=160 nV/e-) Pixels with photoresponse nonuniformity, readout noise, or dark current higher than the maximum value Equivalent circuit PDN Cf_select S/H VIDEO INP Fvref Photodiode array Charge amplifier array CMOS readout circuit KMIRC0049EA 4 InGaAs linear image sensors G11608 series Timing chart (each video line) CLK RESET Integration time (setting) 5 CLK Blank Integration time (actual) 5 CLK AD_sp AD_trig 256 CLK VIDEO 1 tf(clk) CLK 2 255 256 tr(clk) tpw(clk) tr(res) tf(res) RESET KMIRC0065EA tpw(res) KMIRC0065EA Parameter Clock pulse width Clock pulse rise/fall times High Reset pulse width Low Reset pulse rise/fall times Symbol tpw(clk) tr(clk), tf(clk) tpw(res) tr(res), tf(res) Min. 60 0 6 284 0 Typ. 500 20 20 Max. 5000 30 30 Unit ns ns clocks ns 5 InGaAs linear image sensors G11608 series Connection example CLK Pulse generator AD_sp Buffer amp RESET AD_trig Controller Buffer amp Cf_select 1 ADC Cf_select 2 INP PDN Supply voltage Vinp Fvref Vdd VIDEO Buffer amp GND KMIRC0056EB Spectral response (typical example) Spectral transmittance characteristic of window material (typical example) (Ta=25 °C) 1.2 (Ta=25 °C) 100 90 80 Transmittance (%) Photosensitivity (A/W) 1.0 0.8 0.6 0.4 70 60 50 40 30 20 0.2 10 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Wavelength (μm) 0 0.5 0.7 0.9 1.1 1.3 1.5 1.7 Wavelength (μm) KMIRB0057EC KMIRB0058EA 6 InGaAs linear image sensors G11608 series Linearity error 20 (Td=25 ˚C, Vdd=5 V, INP=Vinp=PDN=4 V, Fvref=1.2 V, f=1 MHz, CE=16 nV/eˉ) 15 Linearity error (%) 10 5 0 -5 -10 -15 -20 1 10 100 1000 10000 Output voltage (mV) KMIRB0091EA Temperature characteristics of thermistor (Typ.) Thermistor resistance (kΩ) 1000 100 10 1 -10 (Typ.) Temperature Thermistor resistance (°C) (kΩ) -10 53.0 -5 41.2 0 32.1 5 25.1 10 19.8 15 15.7 20 12.5 25 10.0 30 8.06 35 6.53 40 5.32 45 4.36 50 3.59 55 2.97 60 2.47 0 10 20 30 40 50 60 Temperature (°C) KMIRB0059EA 7 InGaAs linear image sensors G11608 series Dimensional outline (unit: mm) Dimensional outlin (G11608 series, unit: mm) 3.0 ± 0.3 31.8 ± 0.35 Thermistor 0.75 ± 0.05 (Window) 23.0 ± 0.3 1 ch 256 or 512 ch Window 10 11 Photosensitive area 3.0 ± 0.3 1 2 Index mark 0.51 ± 0.05 25.4 ± 0.15 2.54 ± 0.15 0.25 ± 0.05 20.0 ± 0.35 Photosensitive surface 25.4 ± 0.3 13 12 4±1 25.7 ± 0.3 25.3 ± 0.3 22 21 1.3 ± 0.15 Pin no. G11608-256DA G11608-512DA NC AD_sp_EVEN 1 NC RESET_EVEN 2 NC AD_trig_EVEN 3 NC NC 4 Cf_select2 Cf_select2 5 Cf_select1 Cf_select1 6 Thermistor Thermistor 7 Thermistor Thermistor 8 NC CLK_EVEN 9 Fvref Fvref 10 NC VIDEO_EVEN 11 VIDEO VIDEO_ODD 12 Vinp Vinp 13 CLK CLK_ODD 14 PDN* PDN* 15 INP* INP* 16 GND GND 17 Vdd Vdd 18 NC NC 19 AD_trig AD_trig_ODD 20 RESET RESET_ODD 21 AD_sp AD_sp_ODD 22 Chip material: InGaAs Package material: ceramic Lead treatment: Ni/Au plating Lead material: FeNi alloy Window material: borosilicate glass Reflective index of window material: nd=1.47 * PDN and INP should be at the same potential. Window material thickness: It is recommended to use the same power 0.75 ± 0.05 mm source and short between their pins AR coat: none Window sealing method: resin adhesion Position accuracy of photosensitive area center: ±0.3 (with respect to package center) Rotation accuracy of photosensitive area: ±5 ° (with respect to package center) KMIRA0024EB KMIRA0024EB Pin connections Terminal name Input/Output PDN Input AD_sp Cf_select1, 2 Thermistor AD_trig Output Input*8 Output Output RESET Input CLK Input INP Input Vinp Input Fvref Input VIDEO Vdd GND Output Input Input Function and recommended connection Remark Cathode bias terminal for InGaAs photodiode. This should be at the same potential 4.0 V as INP. Digital start signal for A/D conversion 0 to 5 V Signal for selecting feedback capacitance (integration capacitance) on CMOS chip 0 V or 5 V Thermistor for minitoring temperature inside the package Sampling synchronous signal for A/D conversion 0 to 5 V Reset pulse for initializing the feedback capacitance in the charge amplifier formed in 0 to 5 V the CMOS chip. Integration time is determined by the high period of this pulse. Clock pulse for operating the CMOS shift register 0 to 5 V Input stage amplifier reference voltage. Supply voltage for operating the signal 4.0 V processing circuit in the CMOS chip. This should be at the same potential as PDN. Video line reset voltage. Supply voltage for operating the signal processing circuit in 4.0 V the CMOS chip. Differential amplifier reference voltage. Supply voltage for operating the signal 1.2 V processing circuit in the CMOS chip. Differential amplifier output. Analog video signal. 1.2 to 3.0 V Supply voltage for operating the signal processing circuit in the CMOS chip (+5 V) 5V Grand for the signal processing circuit in the CMOS chip (0 V) 0V *8: Conversion efficiency is determined by supply voltage to the Cf_select terminals as shown below. Conversion efficiency 16 nV/e- (Cf=10 pF) 160 nV/e- (Cf=1 pF) Cf_select1 High High Cf_select2 High Low Low: 0 V (GND), High: 5 V(Vdd) 8 InGaAs linear image sensors G11608 series Electrostatic countermeasures This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Image sensors Information described in this material is current as of March, 2016. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. 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No. KMIR1020E03 Mar. 2016 DN 9