Si4776DY Datasheet

New Product
Si4776DY
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with Schottky Diode
FEATURES
PRODUCT SUMMARY
VDS (V)
ID (A)a
RDS(on) () Max.
30
0.016 at VGS = 10 V
11.9
0.020 at VGS = 4.5 V
10.6
• Halogen-free According to IEC 61249-2-21
Definition
• SkyFETMonolithic TrenchFETPower
MOSFET and Schottky Diode
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
5.5 nC
SO-8
APPLICATIONS
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
• Notebook System Power and Memory
- Low Side
D
Schottky Diode
G
Top View
N-Channel MOSFET
Ordering Information:
Si4776DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Symbol
VDS
Limit
30
Gate-Source Voltage
VGS
± 20
TC = 25 °C
TC = 70 °C
Continuous Drain Current (TJ = 150 °C)
TA = 25 °C
ID
IDM
TC = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
Single Pulse Avalanche Current
L = 0.1 mH
Single Pulse Avalanche Energy
IS
IAS
EAS
TC = 25 °C
TC = 70 °C
Maximum Power Dissipation
TA = 25 °C
9.5
9.3b, c
7.5b, c
50
A
3.7
2.3b, c
10
5
mJ
4.1
PD
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
V
11.9
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
Unit
2.6
2.5b, c
1.6b, c
- 55 to 150
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t  10 s
Symbol
RthJA
Typ.
40
Max.
50
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
24
30
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 95 °C/W.
Document Number: 63316
S11-1658-Rev. A, 15-Aug-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4776DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS = 0, ID = 1 mA
30
VGS(th)
VDS = VGS, ID= 1 mA
1
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On -State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
2.3
± 100
VDS = 30 V, VGS = 0 V
0.013
0.150
VDS = 30 V, VGS = 0 V, TJ = 100 °C
1
10
VGS = 10 V, ID = 10 A
0.013
0.016
VGS = 4.5 V, ID = 7 A
0.016
0.020
VDS = 15 V, ID = 10 A
30
VDS  5 V, VGS = 10 V
RDS(on)
gfs
30
V
nA
mA
A

S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
521
VDS = 15 V, VGS = 0 V, f = 1 MHz
pF
141
57
VDS = 15 V, VGS = 10 V, ID = 10 A
VDS = 15 V, VGS = 4.5 V, ID = 10 A
11.6
17.5
5.5
8.5
1.5
nC
1.9
f = 1 MHz
td(on)
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 4.5 V, Rg = 1 
tr
td(off)
0.2
0.8
1.6
12
24
12
24
14
28
tf
8
16
td(on)
10
20
11
22
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 10 V, Rg = 1 
tr
td(off)
tf
11
22
6
12

ns
Drain-Source Body Diode and Schottky Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
3.7
50
IS = 1 A
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.44
0.55
V
12
24
ns
4.5
9
nC
6.5
5.5
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 63316
S11-1658-Rev. A, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4776DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
10
VGS = 10 V thru 4 V
8
ID - Drain Current (A)
ID - Drain Current (A)
40
30
20
VGS = 3 V
6
TC = 25 °C
4
TC = - 55 °C
2
10
TC = 125 °C
VGS = 2 V
0
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
2.0
4.0
Output Characteristics
Transfer Characteristics
5.0
700
0.018
560
C - Capacitance (pF)
VGS = 4.5 V
0.016
0.014
VGS = 10 V
0.012
Ciss
420
280
Coss
Crss
140
0.010
0
0
10
20
30
40
0
50
5
ID - Drain Current (A)
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
1.8
ID = 10 A
ID = 10 A
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
3.0
VGS - Gate-to-Source Voltage (V)
0.020
RDS(on) - On-Resistance (Ω)
1.0
VDS - Drain-to-Source Voltage (V)
8
VDS = 15 V
6
VDS = 20 V
VDS = 10 V
4
2
0
0
2
4
6
8
Qg - Total Gate Charge (nC)
10
12
1.6
VGS = 10 V
1.4
VGS = 4.5 V
1.2
1.0
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Gate Charge
Document Number: 63316
S11-1658-Rev. A, 15-Aug-11
On-Resistance vs. Junction Temperature
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4776DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.050
100
ID = 10 A
0.040
TJ = 150 °C
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
10
TJ = 25 °C
1
0.1
0.01
0.001
0.0
0.030
TJ = 125 °C
0.020
TJ = 25 °C
0.010
0.000
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
150
10-1
10-2
30 V
120
10-3
20 V
10
Power (W)
IR - Reverse Current (A)
10
-4
90
60
10-5
10 V
30
10-6
10-7
0
0
25
50
75
100
125
150
0.001
0.01
0.1
1
10
Time (s)
TJ - Temperature (°C)
Reverse Current (Schottky)
Single Pulse Power, Junction-to-Ambient
100
IDM Limited
100 μs
ID - Drain Current (A)
10
ID Limited
1 ms
1
10 ms
Limited by RDS(on)*
100 ms
0.1
1s
TC = 25 °C
Single Pulse
0.01
0.01
10 s
BVDSS Limited
DC
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
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Document Number: 63316
S11-1658-Rev. A, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4776DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
15
ID - Drain Current (A)
12
9
6
3
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
5
2.0
4
1.6
3
1.2
Power (W)
Power (W)
Current Derating*
2
1
0.8
0.4
0
0.0
0
25
50
75
100
125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63316
S11-1658-Rev. A, 15-Aug-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4776DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 95 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
’Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63316.
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Document Number: 63316
S11-1658-Rev. A, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000