Si4774DY Datasheet

New Product
Si4774DY
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with Schottky Diode
FEATURES
PRODUCT SUMMARY
RDS(on) ()
ID (A)a
0.0095 at VGS = 10 V
16
0.0120 at VGS = 4.5 V
15
VDS (V)
30
Qg (Typ.)
9.5 nC
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
• Halogen-free According to IEC 61249-2-21
Definition
• SkyFET Monolithic TrenchFET Gen. 
Power MOSFET and Schottky Diode
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook PC
- System Power, Memory
• Buck Converter
• Synchronous Rectifier Switch
D
Top View
Ordering Information:
Si4774DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
Schottky Diode
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Symbol
VDS
Limit
30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
16
TC = 70 °C
13.6
ID
TA = 25 °C
9.6b, c
50
IDM
TC = 25 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
L = 0.1 mH
Single Pulse Avalanche Energy
IAS
2.3b, c
15
EAS
11.25
TC = 25 °C
mJ
5
TC = 70 °C
Maximum Power Dissipation
A
4.5
IS
TA = 25 °C
V
12b, c
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
Unit
3.2
PD
TA = 25 °C
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
W
2.5b, c
1.6b, c
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junctionto-Ambientb, d
Maximum Junctionto-Foot (Drain)
Symbol
Typ.
Max.
t  10 s
RthJA
38
50
Steady State
RthJF
20
25
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 85 °C/W.
Document Number: 67953
S11-1179-Rev. A, 13-Jun-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4774DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS = 0, ID = 1 mA
30
VGS(th)
VDS = VGS, ID= 1 mA
1
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On -State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
gfs
± 100
VDS = 30 V, VGS = 0 V
0.028
0.200
VDS = 30 V, VGS = 0 V, TJ = 100 °C
2.5
20
VDS  5 V, VGS = 10 V
RDS(on)
2.3
30
V
nA
mA
A
VGS = 10 V, ID = 10 A
0.0079
0.0095
VGS = 4.5 V, ID = 7 A
0.0096
0.0120
VDS = 15 V, ID = 10 A
43

S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
1025
VDS = 15 V, VGS = 0 V, f = 1 MHz
100
VDS = 15 V, VGS = 10 V, ID = 10 A
VDS = 15 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
tr
Rise Time
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 4.5 V, Rg = 1 
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
14.3
2.8
0.3
1.0
2.0
11
22
22
48
13
26
11
22
td(on)
8
16
13
26
14
28
9
18
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 10 V, Rg = 1 
td(off)
tf
Fall Time
30.5
9.5
tf
tr
Rise Time
Turn-Off Delay Time
20.3
nC
3.2
td(on)
Turn-On Delay Time
pF
251

ns
Drain-Source Body Diode and Schottky Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Currenta
Body Diode Voltage
IS
TC = 25 °C
4.5
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
50
IS = 2 A
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.44
0.55
V
18
35
ns
7.5
15
nC
10
8
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 67953
S11-1179-Rev. A, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4774DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
50
VGS = 10 V thru 4 V
8
ID - Drain Current (A)
ID - Drain Current (A)
40
30
VGS = 3 V
20
6
4
TC = 25 °C
TC = - 55 °C
2
10
TC = 125 °C
VGS = 2 V
0
0
0.5
1
1.5
2
0
0
2.5
2
4
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
1500
1200
0.010
Ciss
C - Capacitance (pF)
VGS = 4.5 V
0.009
0.008
VGS = 10 V
900
600
Coss
Crss
300
0.007
0
0.006
0
10
20
30
40
0
50
4
ID - Drain Current (A)
8
12
16
20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.8
10
ID = 10 A
RDS(on) - On-Resistance (Normalized)
ID = 10 A
VGS - Gate-to-Source Voltage (V)
3
VGS - Gate-to-Source Voltage (V)
0.011
RDS(on) - On-Resistance (Ω)
1
8
6
VDS = 15 V
4
VDS = 20 V
VDS = 10 V
2
0
0
3.4
6.8
10.2
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 67953
S11-1179-Rev. A, 13-Jun-11
13.6
17.0
VGS = 10 V
1.6
1.4
1.2
VGS = 4.5 V
1.0
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4774DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.040
ID = 10 A
TJ = 150 °C
0.032
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
10
TJ = 25 °C
1
0.1
0.01
0.024
0.016
TJ = 125 °C
0.008
0.001
TJ = 25 °C
0
0.0
0.2
0.4
0.6
0.8
1.0
0
2
Source-Drain Diode Forward Voltage
6
8
10
On-Resistance vs. Gate-to-Source Voltage
10-1
80
10-2
30 V
64
10-3
20 V
10
Power (W)
IR - Reverse Current (A)
4
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
-4
48
32
10-5
10 V
16
10-6
10-7
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
TJ - Temperature (°C)
Time (s)
Reverse Current (Schottky)
Single Pulse Power, Junction-to-Ambient
100
IDM Limited
100 μs
ID - Drain Current (A)
10
ID Limited
1 ms
10 ms
1
100 ms
Limited by RDS(on)*
1s
0.1
10 s
TC = 25 °C
Single Pulse
0.01
0.01
DC
BVDSS Limited
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area
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Document Number: 67953
S11-1179-Rev. A, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4774DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
ID - Drain Current (A)
16
12
8
4
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
6
2.0
5
1.6
4
1.2
Power (W)
Power (W)
Current Derating*
2
0.8
0.4
1
0.0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67953
S11-1179-Rev. A, 13-Jun-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4774DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 85 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
’Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67953.
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Document Number: 67953
S11-1179-Rev. A, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000