Si4190ADY Datasheet

New Product
Si4190ADY
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
ID (A)a
0.0088 at VGS = 10 V
18.4
100
0.0094 at VGS = 7.5 V
17.8
0.0120 at VGS = 4.5 V
15.8
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Qg (Typ.)
20.7 nC
APPLICATIONS
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
D
• DC/DC Primary Side Switch
• Telecom/Server
• Industrial
G
Top View
S
Ordering Information:
Si4190ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
18.4
TC = 70 °C
14.6
ID
TA = 25 °C
10.3b, c
IDM
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
TC = 25 °C
5.4
2.7b, c
IAS
30
EAS
45
TC = 25 °C
6
TC = 70 °C
3.8
PD
TA = 25 °C
mJ
W
3b, c
1.9b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
A
70
IS
TA = 25 °C
L = 0.1 mH
V
13b, c
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
Unit
TJ, Tstg
°C
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t  10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 85 °C/W.
Document Number: 63826
S12-0541-Rev. A, 12-Mar-12
Symbol
Typical
Maximum
RthJA
33
42
RthJF
16
21
For technical support, please contact: [email protected]
Unit
°C/W
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4190ADY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
100
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
V
64
ID = 250 µA
mV/°C
- 5.8
VGS(th)
VDS = VGS , ID = 250 µA
2.8
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 100 V, VGS = 0 V
1
VDS = 100 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
VGS 10 V, ID = 15 A
0.0073
0.0088
RDS(on)
VGS 7.5 V, ID = 12 A
0.0078
0.0094
VGS 4.5 V, ID = 10 A
0.0096
0.0120
VDS = 15 V, ID = 15 A
54
Drain-Source On-State Resistancea
Forward Transconductancea
gfs
1.5
30
µA
A

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
1970
VDS = 50 V, VGS = 0 V, f = 1 MHz
695
VDS = 50 V, VGS = 10 V, ID = 10 A
44.4
67
20.7
31
62
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Output Charge
Qoss
VDS = 50 V, VGS = 0 V
Rg
f = 1 MHz
Gate Resistance
6.1
VDS = 50 V, VGS = 4.5 V, ID = 10 A
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
0.4
15
30
11
22
31
60
20
td(on)
12
24
10
20
VDD = 50 V, RL = 5 
ID  10 A, VGEN = 10 V, Rg = 1 
tf
Fall Time
85
2.2
10
td(off)
Turn-Off Delay Time
VDD = 50 V, RL = 5 
ID  10 A, VGEN = 7.5 V, Rg = 1 
56
1.1
tf
tr
Rise Time
nC
9.1
td(on)
Turn-On Delay Time
pF
34
65
10
20

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Currenta
IS
TC = 25 °C
5.4
ISM
VSD
70
IS = 5 A
A
0.76
1.1
Body Diode Reverse Recovery Time
trr
42
80
ns
Body Diode Reverse Recovery Charge
Qrr
40
80
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Body Diode Voltage
IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C
19
23
V
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical support, please contact: [email protected]
Document Number: 63826
S12-0541-Rev. A, 12-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4190ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
70
10
VGS = 10 V thru 4 V
8
ID - Drain Current (A)
ID - Drain Current (A)
56
42
28
14
TC = 25 °C
4
TC = 125 °C
2
VGS = 3 V
0
0.0
6
TC = - 55 °C
VGS = 2 V
1.0
2.0
3.0
4.0
0
0.0
5.0
1.0
2.0
3.0
4.0
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
0.012
3000
0.011
2400
Ciss
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Output Characteristics
VGS = 4.5 V
0.010
0.009
VGS = 7.5 V
0.008
1800
Coss
1200
600
0.007
Crss
VGS = 10 V
0.006
0
20
40
60
ID - Drain Current (A)
80
0
100
0
20
40
60
80
100
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
2.0
10
8
RDS(on) - On-Resistance (Normalized)
ID = 10 A
VGS - Gate-to-Source Voltage (V)
5.0
VDS = 50 V
6
VDS = 25 V
VDS = 75 V
4
2
0
0
10
20
30
40
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 63826
S12-0541-Rev. A, 12-Mar-12
50
VGS = 10 V
ID = 10 A
1.7
1.4
VGS = 4.5 V
1.1
0.8
0.5
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
For technical support, please contact: [email protected]
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4190ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.04
100
TJ = 25 °C
1
0.1
0.02
TJ = 125 °C
0.02
TJ = 25 °C
0.01
0.01
0.001
0.0
ID = 15 A
0.03
TJ = 150 °C
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
10
0.00
0.2
0.4
0.6
0.8
1.0
0
1.2
2
4
6
8
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
200
0.4
0.2
160
0
Power (W)
VGS(th) Variance (V)
10
- 0.2
ID = 5 mA
120
80
- 0.4
- 0.8
- 50
40
ID = 250 μA
- 0.6
- 25
0
25
50
75
100
TJ - Temperature (°C)
125
150
Threshold Voltage
0
0.001
0.01
0.1
Time (s)
1
10
Single Pulse Power, Junction-to-Ambient
100
IDM Limited
ID Limited
100 μs
ID - Drain Current (A)
10
1 ms
1
10 ms
Limited by RDS(on)*
100 ms
0.1
1s
TA = 25 °C
Single Pulse
0.01
0.01
10 s
BVDSS Limited
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
DC
100
Safe Operating Area, Junction-to-Ambient
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For technical support, please contact: [email protected]
Document Number: 63826
S12-0541-Rev. A, 12-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4190ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
ID - Drain Current (A)
16
12
8
4
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
7.5
2.0
6.0
1.6
4.5
1.2
Power (W)
Power (W)
Current Derating*
3.0
1.5
0.0
0.8
0.4
0
25
50
75
100
125
150
0.0
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63826
S12-0541-Rev. A, 12-Mar-12
For technical support, please contact: [email protected]
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4190ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.01
0.0001
0.05
0.02
Single Pulse
0.001
0.01
0.1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63826.
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For technical support, please contact: [email protected]
Document Number: 63826
S12-0541-Rev. A, 12-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000