PHOTODIODE InGaAs APD G8931-04 Time response characteristics compatible with SONET and G/GE-PON The G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET (synchronous optical network), G-PON (gigabit-capable passive optical network) and GE-PON (gigabit ethernet-passive optical network). Features Applications l High-speed response: 2.5 Gbps l Low dark current l Low capacitance l Active area: φ0.04 mm l High sensitivity l Optical fiber communications l High-speed data links ■ General ratings Parameter Active area Symbol - Value φ0.04 Unit mm Parameter Forward current Reverse current Operating temperature Storage temperature Symbol IF IR Topr Tstg Value 2 2 -40 to +85 -55 to +125 Unit mA mA °C °C Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Breakdown voltage Temperature coefficient of V BR Dark current Cut-off frequency Symbol λ λp S V BR Γ ID fc ■ Absolute maxim um ratings ■ Electrical and optical characteristics (Ta=25 °C) Terminal capacitance Condition λ=1.55 µm, M=1 I D =100 µA -40 to +85 °C V R =V BR × 0.9 M=10 V R =V BR × 0.9 f=1 MHz Ct ■ Spectral response DARK CURRENT, PHOTOCURRENT PHOTO SENSITIVITY (A/W) 0.6 0.4 0.2 1.0 Max. 60 0.16 65 - Unit µm µm A/W V V/°C nA GHz - 0.35 0.45 pF 1.2 1.4 1.6 1.8 (Typ. Ta=25 ˚C) 1 mA 0.8 0.8 Typ. 0.95 to 1.7 1.55 0.9 0.11 40 4 ■ Dark current vs. reverse voltage (Typ. Ta=25 ˚C, M=1) 1.0 0 0.6 Min. 0.8 40 3 2.0 WAVELENGTH (µm) 100 µA PHOTOCURRENT 10 µA 1 µA 100 nA 10 nA DARK CURRENT 1 nA 100 pA 10 pA 1 pA 0 10 20 30 40 50 REVERSE VOLTAGE (V) KAPDB0120EA KAPDB0123EA 1 InGaAs APD ■ Dimensional outline (unit: mm) ■ Terminal capacitance vs. reverse voltage 5.4 ± 0.2 (Typ. Ta=25 ˚C) 3.0 3.7 ± 0.2 2.7 ± 0.2 4.7 ± 0.1 Window 3.0 ± 0.1 2.0 Photosensitive surface 13 Min. Terminal capacitance (pF) G8931-04 0.45 Lead 1.0 2.5 ± 0.2 0 0 10 20 30 40 50 Reverse voltage (V) KAPDB0124EA Case KAPDA0034EA ■ Peripheral circuit example of APD Bias supply voltage (for temperature compensation) Current limitting resistance 0.1 µF Min. (as close to APD as possible) Excessive voltage protective circuit APD + High-speed op amp Readout circuit KAPDC0005EC Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2009 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KAPD1018E03 Jan. 2009 DN