Datasheet

PHOTODIODE
InGaAs APD
G8931-04
Time response characteristics compatible with SONET and G/GE-PON
The G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as
SONET (synchronous optical network), G-PON (gigabit-capable passive optical network) and GE-PON (gigabit ethernet-passive optical network).
Features
Applications
l High-speed response: 2.5 Gbps
l Low dark current
l Low capacitance
l Active area: φ0.04 mm
l High sensitivity
l Optical fiber communications
l High-speed data links
■ General ratings
Parameter
Active area
Symbol
-
Value
φ0.04
Unit
mm
Parameter
Forward current
Reverse current
Operating temperature
Storage temperature
Symbol
IF
IR
Topr
Tstg
Value
2
2
-40 to +85
-55 to +125
Unit
mA
mA
°C
°C
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Breakdown voltage
Temperature coefficient of V BR
Dark current
Cut-off frequency
Symbol
λ
λp
S
V BR
Γ
ID
fc
■ Absolute maxim um ratings
■ Electrical and optical characteristics (Ta=25 °C)
Terminal capacitance
Condition
λ=1.55 µm, M=1
I D =100 µA
-40 to +85 °C
V R =V BR × 0.9
M=10
V R =V BR × 0.9
f=1 MHz
Ct
■ Spectral response
DARK CURRENT, PHOTOCURRENT
PHOTO SENSITIVITY (A/W)
0.6
0.4
0.2
1.0
Max.
60
0.16
65
-
Unit
µm
µm
A/W
V
V/°C
nA
GHz
-
0.35
0.45
pF
1.2
1.4
1.6
1.8
(Typ. Ta=25 ˚C)
1 mA
0.8
0.8
Typ.
0.95 to 1.7
1.55
0.9
0.11
40
4
■ Dark current vs. reverse voltage
(Typ. Ta=25 ˚C, M=1)
1.0
0
0.6
Min.
0.8
40
3
2.0
WAVELENGTH (µm)
100 µA
PHOTOCURRENT
10 µA
1 µA
100 nA
10 nA
DARK CURRENT
1 nA
100 pA
10 pA
1 pA
0
10
20
30
40
50
REVERSE VOLTAGE (V)
KAPDB0120EA
KAPDB0123EA
1
InGaAs APD
■ Dimensional outline (unit: mm)
■ Terminal capacitance vs. reverse voltage
5.4 ± 0.2
(Typ. Ta=25 ˚C)
3.0
3.7 ± 0.2
2.7 ± 0.2
4.7 ± 0.1
Window
3.0 ± 0.1
2.0
Photosensitive
surface
13 Min.
Terminal capacitance (pF)
G8931-04
0.45
Lead
1.0
2.5 ± 0.2
0
0
10
20
30
40
50
Reverse voltage (V)
KAPDB0124EA
Case
KAPDA0034EA
■ Peripheral circuit example of APD
Bias supply voltage
(for temperature compensation)
Current limitting resistance
0.1 µF Min.
(as close to APD as possible)
Excessive voltage
protective circuit
APD
+
High-speed op amp
Readout
circuit
KAPDC0005EC
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2009 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
2
Cat. No. KAPD1018E03
Jan. 2009 DN
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