SiHP18N50C Datasheet

SiHP18N50C
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V) at TJ max.
• Low Figure-of-Merit Ron x Qg
560
RDS(on) ()
VGS = 10 V
• 100 % Avalanche Tested
0.225
76
• High Peak Current Capability
Qgs (nC)
21
• dV/dt Ruggedness
Qgd (nC)
29
• Improved trr/Qrr
Qg (Max.) (nC)
Configuration
Single
• Improved Gate Charge
• High Power Dissipations Capability
D
• Compliant to RoHS Directive 2002/95/EC
TO-220AB
G
G
D
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free
SiHP18N50C-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
500
Gate-Source Voltage
VGS
± 30
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain
VGS at 10 V
TC = 25 °C
TC = 100 °C
Currentb
Linear Derating Factor
IDM
TO-220AB
Single Pulse Avalanche Energyc
Maximum Power Dissipation
TO-220AB
Peak Diode Recovery dV/dtd
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
ID
for 10 s
UNIT
V
18
11
A
72
1.8
W/°C
EAS
361
mJ
PD
223
W
dV/dt
5
V/ns
TJ, Tstg
- 55 to + 150
300
°C
Notes
a. Drain current limited by maximum junction temperature.
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 , IAS = 17 A.
d. ISD  18 A, dI/dt  380 A/μs, VDD  VDS, TJ  150 °C.
e. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91374
S11-0520-Rev. D, 21-Mar-11
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP18N50C
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
TO-220
RthJA
-
62
Maximum Junction-to-Case (Drain)
TO-220
RthJC
-
0.56
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
VDS
VGS = 0 V, ID = 250 μA
500
-
-
V
VDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.6
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
3.0
-
5.0
V
Gate-Source Leakage
IGSS
VGS = ± 30 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance
Forward Transconductancea
RDS(on)
gfs
VDS = 500 V, VGS = 0 V
-
-
25
VDS = 400 V, VGS = 0 V, TJ = 125 °C
-
-
250
μA
-
0.225
0.270

VDS = 50 V, ID = 10 A
-
6.4
-
S
VGS = 10 V
ID = 10 A
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
-
2451
2942
Output Capacitance
Coss
VDS = 25 V,
-
300
360
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
-
26
32
Internal Gate Resistance
Rg
f = 1.0 MHz, open drain
-
1.1
-
Total Gate Charge
Qg
-
65
76
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
VGS = 10 V
ID = 18 A, VDS = 400 V
VDD = 250 V, ID = 18 A
Rg = 7.5 , VGS = 10 V
tf
pF

-
21
-
-
29
-
nC
-
80
-
-
27
-
-
32
-
-
44
-
-
-
18
-
-
72
-
-
1.5
V
-
503
-
ns
-
6.7
-
μC
-
30
-
A
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Current
IRRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IS = 18 A, VGS = 0 V
TJ = 25 °C, IF = IS,
dI/dt = 100 A/μs, VR = 35 V
S
Note
a. Repetitive rating; pulse width limited by maximum junction temperature.
The information shown here is a preliminary product proposal, not a commercial product datasheet. Vishay Siliconix is not committed to produce this or any similar
product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products.
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Document Number: 91374
S11-0520-Rev. D, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP18N50C
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
70
100
VGS
15 V
60
14 V
13 V
12 V
11 V
50
10 V
9.0 V
8.0 V
40
7.0 V
6.0 V
Bottom
5.0 V
30
TJ = 25 °C
TJ = 150 °C
ID, Drain Current (A)
ID, Drain Current (A)
Top
20
10
TJ = 25 °C
1
0.1
7.0 V
10
0
0.01
0
6
12
18
24
30
5
TJ = 150 °C
ID, Drain Current (A)
7.0 V
10
0
6
12
18
24
30
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Document Number: 91374
S11-0520-Rev. D, 21-Mar-11
RDS(on), Drain-to-Source On Resistance
(Normalized)
40
0
8
9
10
Fig. 3 - Typical Transfer Characteristics
Fig. 1 - Typical Output Characteristics, TC = 150 °C
VGS
15 V
14 V
13 V
12 V
30
11 V
10 V
9.0 V
8.0 V
7.0 V
20
6.0 V
Bottom 5.0 V
7
VGS, Gate-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Top
6
3
2.5
ID = 17 A
2
1.5
VGS = 10 V
1
0.5
0
- 60 - 40 - 20
0
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP18N50C
Vishay Siliconix
100
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
104
ISD, Reverse Drain Current (A)
Capacitance (pF)
105
Ciss
103
102
Coss
1
10
100
VGS = 0 V
0.1
1000
0.2
0.5
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
1.4
103
Operation in this area limited
by RDS(on)
VDS = 400 V
VDS = 250 V
VDS = 100 V
102
ID, Drain Current (A)
VGS, Gate-to-Source Voltage (V)
1.1
Fig. 7 - Typical Source-Drain Diode Forward Voltage
ID = 17 A
16
0.8
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
20
TJ = 25 °C
1
Crss
10
TJ = 150 °C
10
12
8
10
100 µs
1 ms
1
TC = 25 °C
TJ = 150 °C
Single Pulse
4
0
10 ms
0.1
0
30
60
90
120
102
10
QG, Total Gate Charge (nC)
103
104
VDS, Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
ID, Drain Current (A)
20
15
10
5
0
25
50
75
100
125
150
TC, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
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Document Number: 91374
S11-0520-Rev. D, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP18N50C
Vishay Siliconix
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-2
10-3
0.1
1
Pulse Time (s)
Fig. 10 - Normalized Thermal Transient Impedance, Junction-to-Case
VDS
RD
VDS
tp
VDD
VGS
D.U.T.
RG
+
- VDD
VDS
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
IAS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 11a - Switching Time Test Circuit
QG
10 V
VDS
90 %
QGS
QGD
VG
10 %
VGS
td(on)
Charge
td(off) tf
tr
Fig. 13a - Basic Gate Charge Waveform
Fig. 11b - Switching Time Waveforms
Current regulator
Same type as D.U.T.
L
Vary tp to obtain
required IAS
VDS
50 kΩ
12 V
0.2 µF
0.3 µF
D.U.T
RG
-
IAS
+
V DD
D.U.T.
-
VDS
VGS
10 V
tp
+
0.01 Ω
Fig. 12a - Unclamped Inductive Test Circuit
3 mA
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
Document Number: 91374
S11-0520-Rev. D, 21-Mar-11
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP18N50C
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91374.
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Document Number: 91374
S11-0520-Rev. D, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-220-1
A
E
DIM.
Q
H(1)
D
3
2
L(1)
1
M*
L
b(1)
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.24
4.65
0.167
0.183
b
0.69
1.02
0.027
0.040
b(1)
1.14
1.78
0.045
0.070
F
ØP
MILLIMETERS
c
0.36
0.61
0.014
0.024
D
14.33
15.85
0.564
0.624
E
9.96
10.52
0.392
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.10
6.71
0.240
0.264
0.115
J(1)
2.41
2.92
0.095
L
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
ØP
3.53
3.94
0.139
0.155
Q
2.54
3.00
0.100
0.118
ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C
b
e
J(1)
e(1)
Package Picture
ASE
Revison: 14-Dec-15
Xi’an
Document Number: 66542
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-220 FULLPAK (HIGH VOLTAGE)
A
E
A1
ØP
n
d1
d3
D
u
L1
V
L
b3
A2
b2
c
b
e
MILLIMETERS
DIM.
A
A1
A2
b
b2
b3
c
D
d1
d3
E
e
L
L1
n
ØP
u
v
ECN: X09-0126-Rev. B, 26-Oct-09
DWG: 5972
MIN.
4.570
2.570
2.510
0.622
1.229
1.229
0.440
8.650
15.88
12.300
10.360
INCHES
MAX.
4.830
2.830
2.850
0.890
1.400
1.400
0.629
9.800
16.120
12.920
10.630
MIN.
0.180
0.101
0.099
0.024
0.048
0.048
0.017
0.341
0.622
0.484
0.408
13.730
3.500
6.150
3.450
2.500
0.500
0.520
0.122
0.238
0.120
0.094
0.016
2.54 BSC
13.200
3.100
6.050
3.050
2.400
0.400
MAX.
0.190
0.111
0.112
0.035
0.055
0.055
0.025
0.386
0.635
0.509
0.419
0.100 BSC
0.541
0.138
0.242
0.136
0.098
0.020
Notes
1. To be used only for process drawing.
2. These dimensions apply to all TO-220, FULLPAK leadframe versions 3 leads.
3. All critical dimensions should C meet Cpk > 1.33.
4. All dimensions include burrs and plating thickness.
5. No chipping or package damage.
Document Number: 91359
Revision: 26-Oct-09
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Revision: 02-Oct-12
1
Document Number: 91000