New Product SiJ482DP Vishay Siliconix N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A) a, g Qg (Typ.) 0.0062 at VGS = 10 V 0.0065 at VGS = 7.5 V 80 60 24 nC 0.0095 at VGS = 4.5 V TrenchFET® Power MOSFET 100 % Rg and UIS Tested Capable of Operating with 5 V Gate Drive Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS PowerPAK® SO-8L Single m 5m 6.1 • • • • D • DC/DC Primary Side Switch • Synchronous Rectification • High Current Switching 5.1 3m m G D 4 G S 3 S S 2 S 1 N-Channel MOSFET Ordering Information: SiJ482DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit 80 ± 20 Continuous Source-Drain Diode Current ID Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation TC = 25 °C TA = 25 °C IS L =0.1 mH IAS EAS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e V 60g 60g 21.1b, c 16.9b, c 100 IDM Pulsed Drain Current (t = 300 µs) Unit 60g 4.5b, c 30 45 69.4 44.4 A mJ 5b, c 3.2b, c - 55 to 150 260 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t 10 s Steady State Symbol RthJA RthJC Typical 20 1.3 Maximum 25 1.8 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 65 °C/W. g. Package limited. Document Number: 63728 S12-0544-Rev. A, 12-Mar-12 For technical support, please contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiJ482DP Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 80 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient V 36 ID = 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.7 V IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 80 V, VGS = 0 V 1 VDS = 80 V, VGS = 0 V, TJ = 55 °C 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS 5 V, VGS = 10 V - 5.7 1.5 30 µA A VGS = 10 V, ID = 20 A 0.0051 0.0062 VGS = 7.5 V, ID = 15 A 0.0054 0.0065 VGS = 4.5 V, ID = 10 A 0.0068 0.0095 VDS = 10 V, ID = 20 A 68 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 2425 VDS = 40 V, VGS = 0 V, f = 1 MHz pF 1180 100 VDS = 40 V, VGS = 10 V, ID = 10 A 47 71 Total Gate Charge Qg VDS = 40 V, VGS = 7.5 V, ID = 10 A 36.5 55 24 36 Gate-Source Charge Qgs VDS = 40 V, VGS = 4.5 V, ID = 10 A 6.6 Gate-Drain Charge Qgd Output Charge Qoss VDS = 40 V, VGS = 0 V Rg f = 1 MHz Gate Resistance 10.2 0.4 td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time 2.2 14 28 11 22 36 72 9 18 16 32 13 26 VDD = 40 V, RL = 4 ID 10 A, VGEN = 7.5 V, Rg = 1 tf Fall Time 105 tf td(off) Turn-Off Delay Time VDD = 40 V, RL = 4 ID 10 A, VGEN = 10 V, Rg = 1 69 1.1 td(on) tr Rise Time nC 35 70 11 22 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 60 100 IS = 4 A IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.73 1.1 V 46 90 ns 44 86 nC 21 25 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical support, please contact: [email protected] Document Number: 63728 S12-0544-Rev. A, 12-Mar-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiJ482DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 10 VGS = 10 V thru 5 V VGS = 4 V 8 ID - Drain Current (A) ID - Drain Current (A) 80 60 40 20 6 TC = 25 °C 4 2 TC = 125 °C TC = - 55 °C VGS = 3 V 0 0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.009 4000 0.008 3200 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.0 VGS = 4.5 V 0.007 0.006 VGS = 7.5 V Ciss 2400 1600 VGS = 10 V 0.005 5 Coss 800 Crss 0.004 0 0 20 40 60 80 100 0 16 ID - Drain Current (A) 32 On-Resistance vs. Drain Current and Gate Voltage 64 80 Capacitance 10 2.1 RDS(on) - On-Resistance (Normalized) ID = 10 A VGS - Gate-to-Source Voltage (V) 48 VDS - Drain-to-Source Voltage (V) 8 VDS = 40 V 6 VDS = 30 V VDS = 50 V 4 2 0 0 10 20 30 40 Qg - Total Gate Charge (nC) Gate Charge Document Number: 63728 S12-0544-Rev. A, 12-Mar-12 50 ID = 20 A 1.8 VGS = 10 V 1.5 VGS = 4.5 V 1.2 0.9 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature For technical support, please contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiJ482DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.05 100 ID = 20 A 0.04 TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 25 °C 1 0.1 0.01 0.03 0.02 TJ = 125 °C 0.01 TJ = 25 °C 0.001 0.00 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 0 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 200 0.2 160 - 0.1 Power (W) VGS(th) Variance (V) 2 ID = 5 mA - 0.4 120 80 ID = 250 μA - 0.7 - 1.0 - 50 40 - 25 0 25 50 75 100 125 150 0 0.001 0.01 TJ - Temperature (°C) Threshold Voltage 0.1 Time (s) 1 10 Single Pulse Power, Junction-to-Ambient 100 ID - Drain Current (A) IDM Limited 100 μs 1 ms 10 I Limited D 10 ms 1 Limited by RDS(on)* 100 ms 1s 0.1 10 s TA = 25 °C Single Pulse 0.01 0.01 BVDSS Limited DC 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 For technical support, please contact: [email protected] Document Number: 63728 S12-0544-Rev. A, 12-Mar-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiJ482DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 90 ID - Drain Current (A) 72 Package Limited 54 36 18 0 0 25 50 75 100 TC - Case Temperature (°C) 125 150 85 2.5 68 2.0 51 1.5 Power (W) Power (W) Current Derating* 34 1.0 0.5 17 0.0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 63728 S12-0544-Rev. A, 12-Mar-12 For technical support, please contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiJ482DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 2. Per Unit Base = RthJA = 65 °C/W 3. TJM - TA = PDMZthJA (t) Single Pulse 0.01 0.0001 t1 t2 0.001 4. Surface Mounted 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.01 0.0001 0.02 Single Pulse 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data,see www.vishay.com/ppg?63728. www.vishay.com 6 For technical support, please contact: [email protected] Document Number: 63728 S12-0544-Rev. A, 12-Mar-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline for Non-Al Parts W E1 E E2 W2 W3 W1 b2 D2 b b1 L L1 L1 A1 e θ D1 D b3 b4 0.25 gauge line Topside view Backside view (single) E2 W2 C A W3 W1 F K D3 D3 D2 b3 b4 Backside view (dual) Revision: 16-May-16 Document Number: 69003 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 b4 0.004 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 3.18 3.28 3.38 0.125 0.129 0.133 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 2.96 0.117 0° - 10° 0° - 10° ECN: T16-0221-Rev. D, 16-May-16 DWG: 5976 Note • Millimeters will gover Revision: 16-May-16 Document Number: 69003 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE 5.000 (0.197) 0.510 (0.020) 2.310 (0.091) 4.061 (0.160) 0.595 (0.023) 6.250 (0.246) 8.250 (0.325) 3.630 (0.143) 0.610 (0.024) 0.410 (0.016) 2.715 (0.107) 0.860 (0.034) 1.291 (0.051) 0.710 (0.028) 0.820 (0.032) 1.905 (0.075) 1.270 (0.050) 7.250 (0.285) Recommended Minimum Pads Dimensions in mm (inches) Revision: 07-Feb-12 1 Document Number: 63818 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000