SQJ410EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® Power MOSFET 30 RDS(on) () at VGS = 10 V 0.0039 RDS(on) () at VGS = 4.5 V 0.0042 ID (A) • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 32 Configuration Single D PowerPAK® SO-8L Single m 5m 6.1 5.1 3m m G D 4 G S 3 S S 2 S 1 N-Channel MOSFET ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and Halogen-free SQJ410EP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Currenta TC = 125 °C Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current L = 0.1 mH Single Pulse Avalanche Energy TC = 25 °C Maximum Power Dissipationb TC = 125 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak ID 32 32 IDM 128 IAS 58 EAS 168 TJ, Tstg Temperature)e, f V 32 IS PD UNIT 83 27 - 55 to + 175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc SYMBOL LIMIT RthJA 65 RthJC 1.8 UNIT °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. e. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S12-1860-Rev. C, 13-Aug-12 Document Number: 67003 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ410EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage 30 - - 1.5 2.0 2.5 VDS = 0 V, VGS = ± 20 V IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward VGS = 0, ID = 250 μA VDS = VGS, ID = 250 μA IGSS Zero Gate Voltage Drain Current Transconductanceb VDS VGS(th) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 30 V - - 1 VGS = 0 V VDS = 30 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 30 V, TJ = 175 °C - - 150 VGS = 10 V VDS5 V 30 - - VGS = 10 V ID = 10.3 A - 0.0037 0.0039 VGS = 10 V ID = 10.3 A, TJ = 125 °C - 0.0045 0.0060 VGS = 10 V ID = 10.3 A, TJ = 175 °C - 0.0055 0.0070 VGS = 4.5 V ID = 8.7 A - 0.0035 0.0042 - 93 - - 4965 6210 - 806 1010 - 325 410 VDS = 15 V, ID = 16 A V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Rg VGS = 0 V VDS = 15 V, f = 1 MHz VGS = 10 V VDS = 15 V, ID = 15 A f = 1 MHz td(on) tr td(off) VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 10 V, Rg = 1 tf - 73.5 110 - 12.8 - - 8.2 - 0.6 1.0 1.4 - 15 23 pF nC - 11 17 - 40 60 - 9 14 - - 128 A - 0.75 1.2 V ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 10 A, VGS = 0 Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S12-1860-Rev. C, 13-Aug-12 Document Number: 67003 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ410EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 60 60 V GS = 10 V thru 4 V 48 ID - Drain Current (A) ID - Drain Current (A) 48 36 24 12 36 24 T C = 25 °C 12 T C = 125 °C V GS = 3 V 0 T C = - 55 °C 0 0 2 4 6 8 10 0 1 VDS - Drain-to-Source Voltage (V) 5 Transfer Characteristics 150 0.015 120 0.012 RDS(on) - On-Resistance (Ω) g fs - Transconductance (S) Output Characteristics 2 3 4 VGS - Gate-to-Source Voltage (V) T C = - 55 °C 90 T C = 25 °C 60 T C = 125 °C 30 0.009 0.006 V GS = 4.5 V 0.003 V GS = 10 V 0 0 0 5 10 15 20 25 0 10 20 ID - Drain Current (A) Transconductance 40 50 60 On-Resistance vs. Drain Current 10 7000 ID = 15 A VGS - Gate-to-Source Voltage (V) 6000 Ciss C - Capacitance (pF) 30 ID - Drain Current (A) 5000 4000 3000 2000 Coss 8 V DS = 15 V 6 4 2 1000 Crss 0 0 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) Capacitance S12-1860-Rev. C, 13-Aug-12 25 30 0 20 40 60 80 Qg - Total Gate Charge (nC) Gate Charge Document Number: 67003 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ410EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 ID = 15 A 1.7 10 V GS = 10 V T J = 150 °C IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.0 1.4 V GS = 4.5 V 1.1 1 T J = 25 °C 0.1 0.01 0.8 0.5 - 50 0.001 - 25 0 25 50 75 100 125 150 175 0 0.2 TJ - Junction Temperature (°C) 1.2 Source Drain Diode Forward Voltage 0.025 0.5 0.020 0.1 VGS(th) Variance (V) RDS(on) - On-Resistance (Ω) On-Resistance vs. Junction Temperature 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 0.015 0.010 - 0.3 ID = 5 mA - 0.7 ID = 250 μA T J = 150 °C 0.005 - 1.1 T J = 25 °C 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) - 1.5 - 50 10 - 25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 40 VDS - Drain-to-Source Voltage (V) ID = 1 mA 38 36 34 32 30 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature S12-1860-Rev. C, 13-Aug-12 Document Number: 67003 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ410EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) IDM Limited I D - Drain Current (A) 100 100 µs Limited by RDS(on)* 1 ms ID Limited 10 10 ms 100 ms, 1 s, 10 s, DC 1 0.1 TC = 25 °C Single Pulse BVDSS Limited 0.01 0.01 * VGS 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which R DS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 65 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S12-1860-Rev. C, 13-Aug-12 Document Number: 67003 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ410EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67003. S12-1860-Rev. C, 13-Aug-12 Document Number: 67003 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline Revision: 27-Aug-12 Document Number: 69003 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix MILLIMETERS DIM. INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 (for Al product) 2.75 2.85 2.95 0.108 0.112 0.116 E2 (for other product) 3.18 3.28 3.38 0.125 0.129 0.133 0.006 F - - 0.15 - - L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 2.96 0° - 0.020 0.117 10° 0° - 10° ECN: C12-0026-Rev. B, 27-Aug-12 DWG: 5976 Note • Millimeters will gover Revision: 27-Aug-12 Document Number: 69003 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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