SiA485DJ Datasheet

SiA485DJ
www.vishay.com
Vishay Siliconix
P-Channel 150 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
-150
RDS(on) (Ω) MAX.
ID (A)
2.6 at VGS = -10 V
-1.6 a
2.7 at VGS = -6 V
-1.6 a
Qg (Typ.)
4.2 nC
PowerPAK® SC-70-6L Single
S
4
D
5
• TrenchFET® power MOSFET
• Thermally enhanced PowerPAK® SC-70 package
- Small footprint area
- Low on-resistance
• 100 % Rg and UIS tested
D
6
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
S
• Active clamp switch
05
2.
S
7
m
m
1
m
3
G
Bottom View
m
.05
2
Top View
1
D
2
D
• Load switch
G
Marking Code: B4
P-Channel MOSFET
Ordering Information:
SiA485DJ-T1-GE3 (Lead (Pb)-free and halogen-free)
D
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
-150
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
-1.6
TC = 70 °C
-1.3
TA = 25 °C
ID
Continuous Source-Drain Diode Current
-0.57 b, c
Avalanche Current
IDM
TC = 25 °C
TA = 25 °C
L = 0.1 mH
Single Pulse Avalanche Energy
TC = 70 °C
TA = 25 °C
-1.6
IS
-1.6 b, c
IAS
-1.5
EAS
0.1
mJ
15.6
10
PD
W
2.9 b, c
1.8 b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
A
-2
TC = 25 °C
Maximum Power Dissipation
V
-0.7 b, c
TA = 70 °C
Pulsed Drain Current (t = 100 μs)
UNIT
TJ, Tstg
-55 to +150
Soldering Recommendations (Peak Temperature) d, e
°C
260
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
b, f
Maximum Junction-to-Case (Drain)
SYMBOL
TYPICAL
MAXIMUM
t≤5s
RthJA
32
43
Steady State
RthJC
6
8
UNIT
°C/W
Notes
a. TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
S14-2235-Rev. A, 10-Nov-14
Document Number: 62988
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA485DJ
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
VDS
VGS = 0, ID = -250 μA
-150
-
-
VGS(th)
VDS = VGS, ID = -250 μA
-2.5
-
-4.5
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
VDS = -150 V, VGS = 0 V
-
-
-1
VDS = -150 V, VGS = 0 V, TJ = 55 °C
-
-
-10
VDS ≤ -5 V, VGS = -10 V
-0.8
-
-
VGS = -10 V, ID = -0.5 A
-
2.1
2.6
VGS = -6 V, ID = -0.5 A
-
2.2
2.7
VDS = -10 V, ID = -0.5 A
-
1.5
-
-
155
-
-
8
-
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current a
ID(on)
Drain-Source On-State Resistance a
Forward Transconductance a
Dynamic
RDS(on)
gfs
V
nA
μA
A
Ω
S
b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
-
5.5
-
Total Gate Charge
Qg
-
4.2
6.3
Gate-Source Charge
Qgs
VDS = -75 V, VGS = -10 V, ID = -0.5 A
-
0.9
-
Gate-Drain Charge
Qgd
-
1.3
-
Gate Resistance
Rg
f = 1 MHz
2
10
20
-
5
10
-
20
40
-
10
20
-
20
40
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDS = -75 V, VGS = 0 V, f = 1 MHz
td(on)
tr
VDD = -75 V, RL = 75 Ω
ID ≅ -1 A, VGEN = -10 V, Rg = 1 Ω
td(off)
tf
pF
nC
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
TC = 25 °C
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IS = -0.5 A, VGS = 0 V
IF = -1 A, dI/dt = 100 A/μs, TJ = 25 °C
-
-1.6
-
-2
A
-
-0.8
-1.2
V
-
40
80
ns
-
65
130
nC
-
28
-
-
12
-
ns
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-2235-Rev. A, 10-Nov-14
Document Number: 62988
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA485DJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.8
0.8
VGS = 10 V thru 5 V
0.7
0.7
0.6
I D - Drain Current (A)
I D - Drain Current (A)
0.6
0.5
0.4
0.3
0.2
0.5
0.4
TC = 125 °C
0.3
0.2
25 °C
4V
0.1
0.1
- 55 °C
3V
0.0
0.0
0
VDS - Drain-to-Source Voltage (V)
2
3
4
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2
4
6
8
0
10
1
5
250
4.0
200
3.0
2.5
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
3.5
VGS = 6 V
2.0
VGS = 10 V
1.5
Ciss
150
100
1.0
50
Crss
0.5
Coss
0
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
ID - Drain Current (A)
0.7
0
0.8
30
60
On-Resistance vs. Drain Current and Gate Voltage
120
150
Capacitance
10
2.5
VDS = 75 V
ID = 0.5 A
8
R DS(on) - On-Resistance (Normalized)
V GS - Gate-to-Source Voltage (V)
90
VDS - Drain-to-Source Voltage (V)
6
4
2
0
0.0
0.6
1.2
1.8
2.4
3.0
Qg - Total Gate Charge (nC)
Gate Charge
S14-2235-Rev. A, 10-Nov-14
3.6
4.2
2.0
VGS = 10 V
ID = 0.5 A
1.5
1.0
0.5
0.0
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 62988
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA485DJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
6
2
1
RDS(on) - On-Resistance (Ω)
I S - Source Current (A)
5
TJ = 150 °C
TJ = 25 °C
0.1
4
ID = 0.5 A
3
2
1
0
0.01
0
0.3
0.6
0.9
1.2
1.5
0
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.3
20
ID = 250 µA
1.0
16
0.7
Power (W)
V GS(th) Variance (V)
2
VSD - Source-to-Drain Voltage (V)
0.4
12
8
0.1
4
- 0.2
- 0.5
- 50
- 25
0
25
50
75
100
125
0
0.001
150
TJ - Temperature (°C)
1
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
10
Limited by RDS(on)*
0.01
0.1
10
100
1000
IDM Limited
ID(on) Limited
ID - Drain Current (A)
1
100 μs
1 ms
0.1
10 ms
100 ms
1s
10 s
DC
0.01
TA = 25 °C
BVDSS Limited
0.001
1
10
100
1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S14-2235-Rev. A, 10-Nov-14
Document Number: 62988
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA485DJ
www.vishay.com
Vishay Siliconix
2.0
20
1.5
15
Power Dissipation (W)
ID - Drain Current (A)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.0
0.5
10
5
0.0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S14-2235-Rev. A, 10-Nov-14
Document Number: 62988
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA485DJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 80 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62988.
S14-2235-Rev. A, 10-Nov-14
Document Number: 62988
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
b
e
PIN1
PIN3
PIN1
PIN2
PIN3
PIN5
K1
E1
E1
K
PIN6
K3
D1
D1
K
D2
D1
E3
E1
E2
K4
K
L
PIN2
b
e
L
PowerPAK® SC70-6L
PIN6
PIN4
K2
PIN5
K1
K2
BACKSIDE VIEW OF SINGLE
PIN4
K2
BACKSIDE VIEW OF DUAL
A
D
C
A1
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.23
0.30
0.38
0.009
0.012
0.015
0.23
0.30
0.38
0.009
0.012
0.015
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
D1
0.85
0.95
1.05
0.033
0.037
0.041
0.513
0.613
0.713
0.020
0.024
0.028
D2
0.135
0.235
0.335
0.005
0.009
0.013
E
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
E1
1.40
1.50
1.60
0.055
0.059
0.063
0.85
0.95
1.05
0.033
0.037
0.041
E2
0.345
0.395
0.445
0.014
0.016
0.018
E3
0.425
0.475
0.525
0.017
0.019
0.021
e
0.65 BSC
0.026 BSC
0.65 BSC
0.026 BSC
K
0.275 TYP
0.011 TYP
0.275 TYP
0.011 TYP
K1
0.400 TYP
0.016 TYP
0.320 TYP
0.013 TYP
K2
0.240 TYP
0.009 TYP
0.252 TYP
0.010 TYP
K3
0.225 TYP
0.009 TYP
K4
L
0.355 TYP
0.175
0.275
0.014 TYP
0.375
T
0.007
0.011
0.015
0.175
0.275
0.375
0.007
0.011
0.015
0.05
0.10
0.15
0.002
0.004
0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
0.300 (0.012)
0.650 (0.026)
0.350 (0.014)
0.275 (0.011)
0.550 (0.022)
0.475 (0.019)
2.200 (0.087)
1.500
(0.059)
0.870 (0.034)
0.235 (0.009)
0.355 (0.014)
0.350 (0.014)
1
0.650 (0.026)
0.300 (0.012)
0.950 (0.037)
Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 70486
Revision: 21-Jan-08
www.vishay.com
11
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Revision: 02-Oct-12
1
Document Number: 91000