SiA432DJ Datasheet

SiA432DJ
www.vishay.com
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) ()
ID (A) b, c
0.0200 at VGS = 10 V
10.1
0.0240 at VGS = 4.5 V
9.2
VDS (V)
30
• TrenchFET® power MOSFET
• Thermally enhanced PowerPAK® SC-70 package
- Small footprint area
• 100 % UIS tested
Qg (TYP.)
5.6
PowerPAK® SC-70-6L Single
S
4
D
5
• Material categorization:
For definitions of compliance
www.vishay.com/doc?99912
D
6
please
APPLICATIONS
S
m
m
5
2.0
Top View
D
• Load Switch
05
2.
1
mm
see
3
G
Bottom View
2
D
1
D
G
Marking Code: A L
Ordering Information:
SiA432DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
SiA432DJ-T4-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
TC = 70 °C
12 a
ID
TA = 25 °C
10.1 b, c
8.1 b, c
TA = 70 °C
Pulsed Drain Current
IDM
TC = 25 °C
Continuous Source-Drain Diode Current
12 a
2.9 b, c
IAS
EAS
L = 0.1 mH
15.5
12
TC = 25 °C
12.3
PD
TA = 25 °C
W
3.5 b, c
2.2 b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
mJ
19.2
TC = 70 °C
Maximum Power Dissipation
A
30
IS
TA = 25 °C
Single-Pulse Avalanche Current
Single-Pulse Avalanche Energy
V
12 a
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
UNIT
TJ, Tstg
-55 to 150
Soldering Recommendations (Peak Temperature) d, e
°C
260
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
Maximum Junction-to-Ambient b, f
t5s
RthJA
28
36
Maximum Junction-to-Case (Drain)
Steady State
RthJC
5.3
6.5
UNIT
°C/W
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
S14-0179-Rev. C, 10-Feb-14
Document Number: 68697
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA432DJ
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
30
-
-
V
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS/TJ
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 μA
-
35
-
-
-5.6
-
mV/°C
VGS(th)
VDS = VGS , ID = 250 μA
1
-
3
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
-
-
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
-
-
10
On-State Drain Current a
ID(on)
VDS  5 V, VGS = 10 V
20
-
-
VGS = 10 V, ID = 6 A
-
0.0158
0.0200
VGS = 4.5 V, ID = 5 A
-
0.0190
0.0240
VDS = 10 V, ID = 6 A
-
22
-
-
800
-
VDS = 15 V, VGS = 0 V, f = 1 MHz
-
115
-
-
54
-
VDS = 15 V, VGS = 10 V, ID = 10 A
-
13
20
-
5.6
9
-
2
-
-
1.4
-
Drain-Source On-State Resistance a
Forward Transconductance a
Dynamic
RDS(on)
gfs
μA
A

S
b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Rg
VDS = 15 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
td(on)
tr
td(off)
VDD = 15 V, RL = 1.9 
ID  8 A, VGEN = 4.5 V, Rg = 1 
-
3
-
-
15
25
-
11
17
25
pF
nC

-
15
tf
-
10
15
td(on)
-
8
15
-
8
15
-
15
25
-
8
15
-
-
12
-
-
30
-
0.8
1.2
V
-
16
30
ns
-
8
15
nC
-
9.8
-
-
6.2
-
tr
td(off)
VDD = 15 V, RL = 1.9 
ID  8 A, VGEN = 10 V, Rg = 1 
tf
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
IS = 5 A, VGS = 0 V
IF = 8 A, dI/dt = 100 A/μs, TJ = 25 °C
A
ns
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.


Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-0179-Rev. C, 10-Feb-14
Document Number: 68697
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA432DJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30
5
VGS = 10 thru 4 V
4
I D - Drain Current (A)
I D - Drain Current (A)
24
18
12
VGS = 3 V
6
TC = 25 °C
3
2
1
TC = 125 °C
0
0.0
0.5
1.0
1.5
TC = - 55 °C
0
1.0
2.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.030
1000
0.025
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
Ciss
800
VGS = 4.5 V
0.020
VGS = 10 V
600
400
0.015
200
0.010
Coss
Crss
0
0
6
12
18
ID - Drain Current (A)
24
30
0
6
12
On-Resistance vs. Drain Current and Gate Voltage
24
30
Capacitance
1.7
10
ID = 5 A
8
R DS(on) - On-Resistance (Normalized)
ID = 10 A
VGS - Gate-to-Source Voltage (V)
18
VDS - Drain-to-Source Voltage (V)
VDS = 15 V
VDS = 7.5 V
6
VDS = 22.5 V
4
2
0
0
3
6
9
12
15
1.5
VGS = 4.5 V, 10 V
1.3
1.1
0.9
0.7
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S14-0179-Rev. C, 10-Feb-14
150
Document Number: 68697
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA432DJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.075
100
ID = 6 A
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 25 °C
TJ = 150 °C
1
0.1
0.01
0.001
0.0
TJ = - 50 °C
0.060
0.045
0.030
0.015
TJ = 25 °C
0.000
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
2
3
4
5
6
7
8
9
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.3
30
25
0.1
TA = 25 °C
20
- 0.1
- 0.3
ID = 1 mA
Power (W)
VGS(th) Variance (V)
TJ = 125 °C
15
10
- 0.5
5
ID = 250 µA
- 0.7
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
TJ - Temperature (°C)
Threshold Voltage
0.1
1
Time (s)
10
100
1000
Single Pulse Power (Junction-to-Ambient)
100
Limited by RDS(on)*
I D - Drain Current (A)
10 µs
10
100 µs
1 ms
1
10 ms
100 ms
0.1
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS
Limited
DC
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S14-0179-Rev. C, 10-Feb-14
Document Number: 68697
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA432DJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
28
25
20
14
Power (W)
I D - Drain Current (A)
21
Package Limited
15
10
7
5
0
0
0
25
50
75
100
125
TC - Case Temperature (°C)
Current Derating*, Junction-to-Case
150
0
25
50
75
100
125
150
TJ - Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S14-0179-Rev. C, 10-Feb-14
Document Number: 68697
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA432DJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 65 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
4. Surface Mounted
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
0.0001
Single Pulse
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case


















Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68697.
S14-0179-Rev. C, 10-Feb-14
Document Number: 68697
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
b
e
PIN1
PIN3
PIN1
PIN2
PIN3
PIN5
K1
E1
E1
K
PIN6
K3
D1
D1
K
D2
D1
E3
E1
E2
K4
K
L
PIN2
b
e
L
PowerPAK® SC70-6L
PIN6
PIN4
K2
PIN5
K1
K2
BACKSIDE VIEW OF SINGLE
PIN4
K2
BACKSIDE VIEW OF DUAL
A
D
C
A1
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.23
0.30
0.38
0.009
0.012
0.015
0.23
0.30
0.38
0.009
0.012
0.015
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
D1
0.85
0.95
1.05
0.033
0.037
0.041
0.513
0.613
0.713
0.020
0.024
0.028
D2
0.135
0.235
0.335
0.005
0.009
0.013
E
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
E1
1.40
1.50
1.60
0.055
0.059
0.063
0.85
0.95
1.05
0.033
0.037
0.041
E2
0.345
0.395
0.445
0.014
0.016
0.018
E3
0.425
0.475
0.525
0.017
0.019
0.021
e
0.65 BSC
0.026 BSC
0.65 BSC
0.026 BSC
K
0.275 TYP
0.011 TYP
0.275 TYP
0.011 TYP
K1
0.400 TYP
0.016 TYP
0.320 TYP
0.013 TYP
K2
0.240 TYP
0.009 TYP
0.252 TYP
0.010 TYP
K3
0.225 TYP
0.009 TYP
K4
L
0.355 TYP
0.175
0.275
0.014 TYP
0.375
T
0.007
0.011
0.015
0.175
0.275
0.375
0.007
0.011
0.015
0.05
0.10
0.15
0.002
0.004
0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
0.300 (0.012)
0.650 (0.026)
0.350 (0.014)
0.275 (0.011)
0.550 (0.022)
0.475 (0.019)
2.200 (0.087)
1.500
(0.059)
0.870 (0.034)
0.235 (0.009)
0.355 (0.014)
0.350 (0.014)
1
0.650 (0.026)
0.300 (0.012)
0.950 (0.037)
Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 70486
Revision: 21-Jan-08
www.vishay.com
11
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000