Data Sheet

DF
N1
01
0D
-3
PESD5V0S2BQA
Protection against high surge currents in ultra small
DFN1010D-3 package
1 June 2016
Product data sheet
1. General description
Two bidirectional ElectroStatic Discharge (ESD) protection diodes designed to protect two signal
lines from the damage caused by ESD and other transients.
The device is housed in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device
(SMD) plastic package with visible and solderable side pads.
2. Features and benefits
•
•
•
•
•
•
•
Bidirectional ESD protection of two lines
Ultra small SMD plastic package
ESD protection up to 30 kV
AEC-Q101 qualified
IEC 61000-4-5 (surge): IPPM = 14 A
IEC 61000-4-5 (surge): IPPM = 28 A combined lines
Ultra low leakage current: IRM = 1 nA
3. Applications
•
•
•
•
•
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Communication systems
Portable electronics
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRWM
reverse standoff
voltage
Tamb = 25 °C
-
-
5
V
Cd
diode capacitance
f = 1 MHz; VR = 0 V; Tamb = 25 °C;
single line
-
35
45
pF
[1]
Measured from pin 1 or 2 to pin 3.
[1]
PESD5V0S2BQA
NXP Semiconductors
Protection against high surge currents in ultra small DFN1010D-3 package
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
K1
cathode
2
K2
cathode
3
CC
common cathode
4
CC
common cathode
Simplified outline
Graphic symbol
K1
1
CC
K2
4
3
aaa-023266
2
Transparent top view
DFN1010D-3 (SOT1215)
6. Ordering information
Table 3. Ordering information
Type number
Package
PESD5V0S2BQA
Name
Description
Version
DFN1010D-3
DFN1010D-3: plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 1.1 x 1.0 x 0.37 mm
SOT1215
7. Marking
Table 4. Marking codes
Type number
Marking code
PESD5V0S2BQA
00 01 10
MARKING CODE
(EXAMPLE)
READING
DIRECTION
YEAR DATE
CODE
VENDOR CODE
PIN 1
INDICATION MARK
MARK-FREE AREA
READING EXAMPLE:
11
01
10
aaa-008041
Fig. 1. DFN1010D-3 (SOT1215) binary marking code description
PESD5V0S2BQA
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8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
IPPM
peak pulse current
tp = 8/20 µs; single line
[1][2]
-
14
A
tp = 8/20 µs; combined lines
[1][3]
-
28
A
tp = 8/20 µs; average measured; single
line
[1][2]
-
17.5
A
tp = 8/20 µs; average measured; combined [1][3]
lines
-
35
A
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
125
°C
Tstg
storage temperature
-65
150
°C
ESD maximum ratings
VESD
electrostatic discharge
voltage
contact discharge
[4][2]
-
30
kV
air discharge
[4][2]
-
30
kV
-
10
kV
human body model (MIL-STD-883)
[1]
[2]
[3]
[4]
Device stressed with non-repetitive current pulses (8/20 µs exponential decay waveform according to IEC 61000-4-5).
Measured from pin 1 or 2 to pin 3.
Measured from pin 1 and 2 to pin 3.
Device stressed with ten non-repetitive ESD pulses.
001aaa631
001aaa630
120
IPP
100 %
100 % IPP; 8 µs
IPP
(%)
80
90 %
e-t
50 % IPP; 20 µs
40
10 %
0
0
10
20
30
tp (µs)
Fig. 2. 8/20 µs pulse waveform according to
IEC 61000-4-5
PESD5V0S2BQA
Product data sheet
tr = 0.6 ns to 1 ns
40
t
30 ns
60 ns
Fig. 3. ESD pulse waveform according to IEC 61000-4-2
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Protection against high surge currents in ultra small DFN1010D-3 package
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRWM
reverse standoff
voltage
Tamb = 25 °C
-
-
5
V
VBR
breakdown voltage
IR = 5 mA; Tamb = 25 °C
5.5
7
9.5
V
IRM
reverse leakage
current
VR = 5 V; Tamb = 25 °C
[1]
-
1
50
nA
Cd
diode capacitance
f = 1 MHz; VR = 0 V; Tamb = 25 °C;
single line
[1]
-
35
45
pF
f = 1 MHz; VR = 0 V; Tamb = 25 °C;
combined lines
[2]
-
70
90
pF
IPP = 1 A; Tamb = 25 °C; tp = 8/20 µs;
single line
[3][1]
-
6.5
8.5
V
IPPM = 14 A; Tamb = 25 °C; tp = 8/20 µs;
single line
[3][1]
-
-
11.5
V
IPPM = 28 A; Tamb = 25 °C; tp = 8/20 µs;
combined lines
[4][2]
-
11.5
-
V
IPPM = 16 A; Tamb = 25 °C; tp = TLP;
single line
[4][1]
-
8.5
-
V
IPPM = 16 A; Tamb = 25 °C; tp = TLP;
combined lines
[4][2]
-
7.6
-
V
IR = 10 A; Tamb = 25 °C; single line
[4][1]
-
0.12
-
Ω
IR = 10 A; Tamb = 25 °C; combined lines [4][2]
-
0.07
-
Ω
VCL
clamping voltage
Rdyn
[1]
[2]
[3]
[4]
dynamic resistance
Measured from pin 1 or 2 to pin 3.
Measured from pin 1 and 2 to pin 3.
Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.
Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANSI / ESD STM5.5.1-2008.
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IPP
aaa-023194
102
IR
(nA)
10
1
IR
IRM
- VCL - VBR - VRWM
- IRM
- IR
VRWM VBR VCL
10-1
-
+
10-2
- IPP
10-3
-75
006aaa676
Fig. 4. V-I characteristics for a bidirectional ESD
protection diode
25
75
125
Tj (°C)
175
VRWM = 5 V
Fig. 5. Relative variation of reverse leakage current as a
function of ambient temperature; typical values
aaa-023195
35
Cd
(pF)
30
-25
aaa-023196
90
IPP
(A)
combined lines;
Rdyn = 0.07 Ω
70
25
50
20
15
single line;
Rdyn = 0.11 Ω
30
10
10
5
0
-5
-3
-1
1
3
VR (V)
Single line;
f = 1 MHz; VGS = 0 V; Tamb = 25 °C
Fig. 6. Diode capacitance as a function of reverse
voltage; typical values
PESD5V0S2BQA
Product data sheet
-10
5
0
6
12
VCL (V)
18
tp = 100 ns; Transmission Line Pulse (TLP)
Fig. 7. Dynamic resistance with positive clamping
voltage; typical values
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aaa-023197
10
aaa-023198
12
IPP
(A)
VCL
(V)
-10
single line
8
-30
single line;
Rdyn = 0.12 Ω
combined lines
combined lines;
Rdyn = 0.05 Ω
-50
4
-70
-90
-18
-12
-6
VCL (V)
0
0
tp = 100 ns; Transmission Line Pulse (TLP)
Fig. 8. Dynamic resistance with negative clamping
voltage; typical values
0
10
20
30
IPP (A)
40
tp = 8/20 µs; according to IEC 61000-4-5
Fig. 9. Dynamic resistance with positive clamping
voltage; typical values
aaa-023199
0
VCL
(V)
-4
-8
combined lines
single line
-12
-40
-30
-20
-10
IPP (A)
0
tp = 8/20 µs; according to IEC 61000-4-5
Fig. 10. Dynamic resistance with negative clamping voltage; typical values
PESD5V0S2BQA
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ESD TESTER
4 GHz DIGITAL
OSCILLOSCOPE
RG 223/U
50 Ω coax
Rd
40 dB
ATTENUATOR
Cs
50 Ω
DUT
(DEVICE
UNDER
TEST)
IEC 61000-4-2 ed.2
Cs = 150 pF; Rd = 330 Ω
10
2
V
(kV) 8
V
(kV) 0
6
-2
4
-4
2
-6
0
-8
-2
-10
0
10
20
30
40
50
t (ns)
60
-10
-10
70
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
0
10
20
30
40
50
t (ns)
60
70
unclamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
aaa-003952
Fig. 11. ESD clamping test setup and waveforms
aaa-023263
60
VCL
(V)
aaa-023264
60
VCL
(V)
20
20
VCL at 30 ns = 6.7 V
-20
-60
-10
VCL at 30 ns = -6 V
-20
0
10
20
30
40
50
60
t (ns)
Fig. 12. Clamped +8 kV pulse waveform
(IEC 61000-4-2 network)
PESD5V0S2BQA
Product data sheet
-60
-10
70
0
10
20
30
40
50
60
t (ns)
70
Fig. 13. Clamped -8 kV pulse waveform
(IEC 61000-4-2 network)
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10. Application information
The device is designed for the protection of up to two bidirectional data lines from surge pulses and
ESD damage.
lines to be protected
ESD protection diode
GND
006aab332
Fig. 14. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge
transients. The following guidelines are recommended:
1.
2.
3.
4.
5.
6.
7.
8.
Place the device as close to the input terminal or connector as possible.
Minimize the path length between the device and the protected line.
Keep parallel signal paths to a minimum.
Avoid running protected conductors in parallel with unprotected conductors.
Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops.
Minimize the length of the transient return path to ground.
Avoid using shared transient return paths to a common ground point.
Use ground planes whenever possible. For multilayer PCBs, use ground vias.
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
PESD5V0S2BQA
Product data sheet
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12. Package outline
0.87
0.95
0.75
1
0.95
1.05
0.22
0.30
2
0.16
0.24
0.1
3
0.04
max
0.34
0.40
Dimensions in mm
0.17
0.25
0.245
0.325
1.05
1.15
0.195
0.275
13-03-05
Fig. 15. Package outline DFN1010D-3 (SOT1215)
PESD5V0S2BQA
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13. Soldering
Footprint information for reflow soldering of DFN1010D-3 package
SOT1215
1.2
0.45 (2x)
0.3
1.1
0.35 (2x)
0.4
0.25 (2x)
0.75
0.3
0.5
1.5
1.4
0.4
0.5
0.4
0.3
0.5
1.3
0.4
0.3
0.4
0.5
1.3
solder land
solder land plus solder paste
occupied area
solder resist
Dimensions in mm
Issue date
12-11-23
13-03-06
sot1215_fr
Fig. 16. Reflow soldering footprint for DFN1010D-3 (SOT1215)
PESD5V0S2BQA
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14. Revision history
Table 7. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PESD5V0S2BQA v.1
20160601
Product data sheet
-
-
PESD5V0S2BQA
Product data sheet
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
15. Legal information
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Data sheet status
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
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Please consult the most recently issued document before initiating or
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The term 'short data sheet' is explained in section "Definitions".
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multiple devices. The latest product status information is available on
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Preview — The document is a preview version only. The document is still
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PESD5V0S2BQA
Product data sheet
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
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TrenchMOS, TriMedia and UCODE — are trademarks of NXP
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HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
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16. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Characteristics..............................................................4
10. Application information............................................. 8
11. Test information......................................................... 8
12. Package outline.......................................................... 9
13. Soldering................................................................... 10
14. Revision history........................................................11
15. Legal information..................................................... 12
©
NXP Semiconductors N.V. 2016. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 1 June 2016
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