TSMP58138 Datasheet

TSMP58138
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Vishay Semiconductors
IR Sensor Module for Remote Control Systems
FEATURES
• Photo detector and preamplifier in one package
• AC coupled response from 30 kHz to 55 kHz, all
data formats
• If the IR signal strength is less than 500 mW/m2
(distance more than 0.5 m with a typical IR
remote control), the frequency range is up to
60 kHz
• Improved shielding
disturbance
19026
against
electrical
field
• AGC to suppress ambient noise
• High sensitivity, long receiving range
MECHANICAL DATA
• Supply voltage: 2.5 V to 5.5 V
Pinning:
• Carrier out signal for IR repeater applications
1 = carrier OUT, 2 = GND, 3 = VS
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The TSMP58138 is a miniaturized sensor for receiving the
modulated signal of infrared remote control systems. A PIN
diode and preamplifier are assembled on a lead frame, the
epoxy package is designed as an IR filter. The modulated
output signal, carrier out, can be used for repeater
applications and code learning applications.
This component has not been qualified according to
automotive specifications.
PARTS TABLE
Carrier frequency
38 kHz
TSMP58138
Package
Minicast
Pinning
1 = carrier OUT, 2 = GND, 3 = VS
Dimensions (mm)
5.0 W x 6.95 H x 4.8 D
Mounting
Leaded
Application
Repeater
BLOCK DIAGRAM
APPLICATION CIRCUIT
16833_10
3
33 kΩ
R1 100 Ω
VS
AGC
Band
pass
Comparator
Rev. 1.2, 05-Feb-14
Control circuit
C1
4.7 µF
OUT
VO
2
PIN
Supply voltage
+5V
TSAL6400
33 kΩ
1
Input
R3 680 Ω
TSMP58138
R4
3Ω
GND
0V
Recommended circuit for best sensitivity of the TSOP9xx38 in repeater applications.
It limits the output voltage swing VO to about 0.7 V in order to avoid internal coupling.
GND
1
Document Number: 82486
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSMP58138
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
VS
-0.3 to +6
V
Supply voltage (pin 3)
Supply current (pin 3)
IS
5
mA
Output voltage (pin 1)
VO
-0.3 to 5.5
V
VS - VO
-0.3 to (VS + 0.3)
V
IO
5
mA
Voltage at output to supply
Output current (pin 1)
Junction temperature
Storage temperature range
Operating temperature range
100
°C
-25 to +85
°C
Tamb
-25 to +85
°C
Tamb ≤ 85 °C
Ptot
10
mW
t ≤ 10 s, 1 mm from case
Tsd
260
°C
Power consumption
Soldering temperature
Tj
Tstg
Note
• Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability.
ELECTRICAL AND OPTICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Supply current (pin 3)
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
Ev = 0, VS = 5 V
ISD
0.55
0.7
0.9
Ev = 40 klx, sunlight
ISH
Supply voltage
d
IOSL = 0.5 mA, Ee = 0.7 mW/m2,
test signal see fig. 1
VOSL
Minimum irradiance
Less than 5 missing or 5 additional
sub carrier pulses related to one
burst
Ee min.
Maximum irradiance
Less than 5 missing or 5 additional
sub carrier pulses related to one
burst
Ee max.
Angle of half transmission
distance
ϕ1/2
Transmission distance
Output voltage low (pin 1)
Directivity
mA
0.8
VS
Ev = 0, test signal see fig. 1,
IR diode TSAL6200,
IF = 400 mA
UNIT
mA
2.5
5.5
V
20
m
1
100
mV
2
mW/m2
W/m2
30
± 45
deg
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Optical Test Signal:
IR diode TSAL6200, IF = 0.25 A,
N = 15 carrier pulses per burst, f = 38 kHz,
burst repetition time: 3 ms
7
Ee min. - Detection Threshold (mW/m²)
Ee
t
tpi - burst length
VO
tpi ≥ 6 carrier cycles is recommended for optimum function
VOH
6
5
4
3
2
1
0
VOL
21648
The number of carrier- out-pulses might not be exactly
same as the number of carrier cycles in tpi (input burst)
30
t
21649
Fig. 1 - Output Function
Rev. 1.2, 05-Feb-14
35
40
45
50
55
60
fo - Carrier Frequency (kHz)
Fig. 2 - Frequency Dependence of Sensitivity
2
Document Number: 82486
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSMP58138
S (λ)rel - Relative Spectral Sensitivity
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Vishay Semiconductors
1.2
1.0
0.8
0.6
0.4
0.2
0
750
850
950
1150
1050
λ - Wavelength (nm)
94 8408
Fig. 3 - Relative Spectral Sensitivity vs. Wavelength
0°
10°
20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.6
19258
0.4
0.2
0
drel - Relative Transmission Distance
Fig. 4 - Horizontal Directivity
0°
10°
20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.6
19259
0.4
0.2
0
d rel - Relative Transmission Distance
Fig. 5 - Vertical Directivity
Rev. 1.2, 05-Feb-14
3
Document Number: 82486
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSMP58138
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
5
4.8
(4)
2.8
(5.55)
6.95 ± 0.3
8.25 ± 0.3
R2
0.9
1.1
30.5 ± 0.5
(1.54)
0.85 max.
0.7 max.
2.54 nom.
2.54 nom.
0.5 max.
1.2 ± 0.2
Marking area
technical drawings
according to DIN
specifications
Not indicated to lerances ± 0.2
Drawing-No.: 6.550-5263.01-4
Issue: 12; 16.04.10
19009
Rev. 1.2, 05-Feb-14
R2
4
Document Number: 82486
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000