VAISH TSOP7000SW1

TSOP7000SW1
Vishay Semiconductors
IR Receiver for High Data Rate PCM at 455 kHz
Description
The TSOP7000SW1 is a miniaturized receiver for
infrared remote control and IR data transmission. PIN
diode and preamplifier are assembled on lead frame,
the epoxy package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. The main benefit is the
operation with high data rates and long distances.
1
2
3
Features
Special Features
• Photo detector and preamplifier in one
package
• Internal Bandfilter for PCM frequency
• Internal shielding against electrical field
disturbance
• TTL and CMOS compatibility
• Output active low
• Small size package
•
•
•
•
•
e3
18301
Data rate 20 kbit/s
Supply voltage 2.7 - 5.5 V
Short settling time after power on
High envelope duty cycle can be received
Enhanced immunity against disturbance
from energy saving lamps
Block Diagram
Application Circuit
16841
3
1
Input
AGC
Band
Pass
Demodulator
OUT
2
PIN
Control Circuit
16843
Transmitter TSOPxxxx
with
TSHFxxxx
Circuit
10 kΩ
VS
R1 = 47 Ω
VS
OUT
GND
C1 =
4.7 µF
R2 >=
1 kΩ
+VS
µC
VO
GND
GND
R1 + C1 recommended to suppress power supply
disturbances.
R2 optional for improved pulse forming.
Document Number 82221
Rev. 1.1, 01-Mar-05
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1
TSOP7000SW1
Vishay Semiconductors
Absolute Maximum Ratings
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Symbol
Value
Unit
Supply Voltage
Parameter
Pin 3
Test condition
VS
- 0.3 to + 6.0
V
Voltage at output to supply
Pin 1
VS - VO
- 0.3 to VS + 0.3
V
Supply Current
Pin 3
IS
5
mA
Output Voltage
Pin 1
VO
- 0.3 to + 6.0
V
Output Current
Pin 1
IO
15
mA
Tj
100
°C
Tstg
- 25 to + 85
°C
Tamb
- 25 to + 85
°C
Tsd
260
°C
Ptot
30
mW
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Soldering Temperature
t ≤ 10 s, 1 mm from case
Power Consumption
Electrical and Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Supply Current (Pin 3)
Typ.
Max
Dark ambient
Test condition
ISD
2.0
2.7
Ev = 40 klx, sunlight
ISH
2.3
Supply Voltage (Pin 3)
Symbol
VS
Min
2.7
5
Unit
mA
mA
5.5
V
λp= 870 nm, IR Diode
TSHF5400, IF = 300 mA
dmax
20
m
λp= 950 nm, IR Diode
TSAL6400, IF = 300 mA
dmax
12
m
Threshold Irradiance
λp = 870 nm,
optical test signal of Fig.1
Ee min
0.8
Maximum Irradiance
Optical test signal of Fig.1
Ee max
Transmission Distance
Output Voltage Low (Pin 1)
1 kΩ external pull up resistor
VQL
Output Voltage High (Pin 1)
No external pull-up resistor
VQH
Bandpassfilter quality
Out-Pulse width tolerance
30
mW/m2
W/m2
100
VS - 0.25
Q
Optical test signal of Fig.1,
1.5
mV
V
10
∆tpo
- 15
tdon
15
+5
+ 15
µs
36
µs
1.5 mW/m2 ≤ Ee ≤ 30 W/m2
Delay time of output pulse
Optical test signal of Fig.1,
Ee > 1.5 mW/m2
Receiver start up time
Valid data after power on
tV
50
µs
µs
Falling time
Leading edge of output pulse
tf
0.4
Rise time
No external pull up resistor
tr
12
µs
1 kΩ external pull up resistor
tr
1.2
µs
ϕ1/2
± 45
deg
Directivity
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2
Angle of half transmission
distance
Document Number 82221
Rev. 1.1, 01-Mar-05
TSOP7000SW1
Vishay Semiconductors
Optical Test Signal (f=455kHz, 10 cycles/burst)
Ee
tpi = 22 ∝s
2.2 ∝s
> 48.6 ∝s
(min. duty cycle)
t
tdon
16792
tpo –
Output Signal of TSOP7000
VQ
j tdon, j
tpo
VQH
90%
50%
VQL
10%
tf
tpo = tpi ı 15 ∝s
Jitter of Output Pulse ( Ps )
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
t
tr
30
N=10 cycles/burst
25
20
Jitter – tpo
15
10
5
0
0.1
Jitter – tdon
1
1.0
10 100.0
100 1000.0
1000 10000.0
10000100000.0
100000
10.0
Ee – Irradiance (mW/m2)
16791
Figure 1. Output Function
Figure 4. Jitter of Output Pulse
1.0
(IR diode TSHF5400, p 870 nm, IF = 300 mA, f = 455 kHz, 10 cycles/burst)
tpi = 22 ∝s
Ee
t
Output Signal of TSOP7000
tdon
16755
tpo
VO
VOH
Ee min / Ee rel – Responsitivity
Optical Test Signal
VOL
jtdon
jtpo
jitter of leading edge
jitter of output pulse width
25
20
Delay time – tdon
15
10
t
t
don,
5
0
0.1
16790
N = 10 cycles/burst
1.0
1
10.0
10 100.0
100 1000.0
1000 10000.0
10000100000.0
100000
Ee – Irradiance (mW/m2)
Figure 3. Output Pulse Diagram (tdon, tpo)
Document Number 82221
Rev. 1.1, 01-Mar-05
0.7
0.6
0.5
0.4
0.3
0.2
0.1
350
400
450
500
550
600
f – Frequency ( kHz )
16751
Figure 5. Frequency Dependence of Responsivity
E e min – Threshold Irradiance (mW/m 2)
30
po
Output Pulse Length ( Ps )
Output pulse width – tpo
0.8
0.0
300
t
Figure 2. Output Fucntion (mit Jitter)
35
0.9
16786
14
12
10
Correlation with ambient light sources
(Disturbanceeffect): 10 W/m2 = 1.4 klx
(Stand.illum.A,T = 2855 K)
10 W/m2 = 10 klx
(Daylight,T = 5900 K)
8
6
4
2
0
0.01
0.10
1.00
10.00
100.00
E – DC Irradiance (W/m2)
Figure 6. Sensitivity in Bright Ambient
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TSOP7000SW1
16787
2.0
Sensitivity in dark ambient
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VS – Supply Voltage ( V )
0.8
0.6
0.4
0.2
0.0
750 800 850 900 950 1000 1050 1100 1150
λ - Wavelength ( nm )
Figure 10. Relative Spectral Sensitivity vs. Wavelength
1.1
1.0
Relative Transmission Distance
E e min - Relative Sensitivity
1.0
16789
Figure 7. Sensitivity vs. Supply Voltage
1.0
0.9
0.8
0.7
0.6
0.5
8
10 12 14 16 18 20 22 24 26 28
N - Burstlength ( carriercycles/burst )
16788
1.2
S ( λ ) rel - Relative Spectral Sensitivity
E e min – Threshold Irradiance (mW/m 2)
Vishay Semiconductors
Figure 8. Rel. Sensitivity vs. Burstlength
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
–90–75–60–45–30–15 0 15 30 45 60 75 90
96 12223
Angle (deg)
Figure 11. Directivity
2.3
I s - Supply Current ( mA )
2.2
VS = 5.5 V
2.1
VS = 2.7 V
2.0
1.9
1.8
1.7
1.6
1.5
-25 -15 -5
16754
5 15 25 35 45 55 65 75 85
Tamb - Ambient Temperature ( °C )
Figure 9. Supply Current vs. Ambient Temperature
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Document Number 82221
Rev. 1.1, 01-Mar-05
TSOP7000SW1
Vishay Semiconductors
Recommendation for Suitable Data Formats
The circuit of the TSOP7000SW1 is designed in that
way that disturbance signals are identified and unwated output pulses due to noise or disturbances are
avoided. A bandpass filter, an automatic gain control
and an integrator stage is used to suppress such disturbances. The distinguishing marks between data
signal and disturbance are carrier frequency, burst
length and the envelope duty cycle.
The data signal should fullfill the following conditions:
• The carrier frequency should be close to 455 kHz.
• The burstlength should be at least 22 µs (10 cycles
of the carrier signal) and shorter than 500 µs.
• The separation time between two consecutive
bursts should be at least 26 µs.
• If the data bursts are longer than 500 µs then the
envelope duty cycle is limited to 25 %
• The duty cycle of the carrier signal (455 kHz) may be
between 50 % (1.1 µs pulses) and 10 % (0.2 µs
pulses). The lower duty cycle may help to save battery power.
Document Number 82221
Rev. 1.1, 01-Mar-05
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5
TSOP7000SW1
Vishay Semiconductors
Package Dimensions in mm
18016
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Document Number 82221
Rev. 1.1, 01-Mar-05
TSOP7000SW1
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 82221
Rev. 1.1, 01-Mar-05
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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