Data Sheet - AM321A_RE

Da
ata
a S he et
AM3
321A
A_RE
E
Parrt Numbe
er : SPM
MRDT3215A0
SPMRDT
T3215A0
0
Introd
duction
n
Part Numberr : SPM
MRDT32
215A0
pact Po
ower Lig
ghting S
Source
Comp
Featu
ures
age: Ag plated 2 pa
ad design package with silico
one resin
 Packa
 View Angle : 120˚
al wavelen
ngth : 620
0nm
 Typica
al efficienccy : 60 lm
m/W
 Optica
ondition : JEDEC
J
Le
evel 2a
 Preco
ding Voltag
ge : up to
o ±2kV [HB
BM]
 ESD Withstand
Appliications
s
 trafficc lights
LCD, switc
ches, keyss, displays
s, illuminatted adverttising)
 back lighting (L
or and extterior auto
omotive lig
ghting
 interio
andescent lamps
 substtitution of micro inca
er lights (e
e.g. steps, exit wayys, etc.)
 marke
mbol luminaire
 signal and sym
Envirronmen
ntal Com
mplianc
ce
Samssung is co
ompliant to
o the resttrictions off hazardou
us substannces in ele
ectronic
equipm
ment, name
ely, the Ro
oHS, ELV,, ISO1400
01 and RE
EACH direectives.
Samsung will no
ot intention
nally suppllement the
e restricted
d materialss to the LED
L
6+
productt: Cd,Pb,H
Hg,PBBs,P
PBDEs and
d Cr
2015/08/03
3/Rev.05
- 1 -
SPMRDT
T3215A0
0
Table
T
o
of Co
ontentts

Part Numberr Descrip
ption
--------------------------
3

Characteristic
c
--------------------------
4
Typiical Chara
acteristic
--------------------------
4
Lum
minous inte
ensity Bin
--------------------------
4
Forw
ward Volta
age Bin
--------------------------
5
Dom
minant Wavelength B
Bin
--------------------------
5

Abso
olute Maximum R
Rating
--------------------------
6

Typical Charracteristicc Graph
--------------------------
7

Mecchanical Dimensio
D
on
--------------------------
11
1

Sold
dering Infformation
n
1
-------------------------- 12

Packking Information
1
-------------------------- 13

Prod
duct Labe
eling Info
ormation
1
-------------------------- 15

Relia
ability Te
est Cond ition
1
-------------------------- 16

Preccaution fo
or Use
1
-------------------------- 17

Revision His
story
1
-------------------------- 19

Com
mpany Infformation
n
1
-------------------------- 19
2015/08/03
3/Rev.05
- 2 -
SPMRDT
T3215A0
0
Part N
Numberr Descrription
The Part number designation
d
n is expla ined as fo
ollows :
SP M R
RD T 321 5 A 0 AB
B CD EF
AB C DE F GHI J K L MN OP QR
Where:
AB
- dessignates com
mpany name
e and Samssung LED PKG
P
(SP for Samsung LLED PKG)
C
- dessignates pow
wer variant (M for autom
motive Midd
dle Power)
DE
- dessignates color variant (R
RD for auto motive RED
D and single
e color)
F
- dessignates LED PKG vers
sion (value T for initial version)
GHI
- dessignates pro
oduct configu
uration and type
J
- dessignates ope
erating cond
dition (value 5 for 50mA
A)
K
- dessignates spe
ecific properrty
L
- dessignates CR
RI variant (va
alue 0 for d
discrete colo
or)
MN
- dessignates forw
ward voltage
e property
OP
- dessignates dom
minant wave
elength prop
perty
QR
- dessignates lum
minous intensity propertyy
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3/Rev.05
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SPMRDT
T3215A0
0
Chara
acteristiics
[1]
[TJ = 25℃]
 Typical Characcteristics
Parrameter
Sym
mbol
Valu
ue
Unit
Forward voltage (IF = 50 mA
A)
VF
2.200
V
Reverse current (V
VR = 5 V)
IR
100
㎂
Peak wa
avelength (I
( F = 50 mA)
m
λ
Peak
6200
㎚
Dominant wavelength (IF = 50 mA)
λ
Dom
619..5
㎚
Spectral bandwidth
h at half maximum
m
△λ
166
㎚
TC
Cλ Peak
0.133
㎚/K
TC
Cλ Dom
0.077
㎚/K
TC
T V
-2.226
㎷/K
677
K/W
Temperatture coefficient of peak
waveleng
gth(IF =50 mA, -30℃
℃≤ T≤ 80℃
℃)
Temperatture coefficient of dominant
waveleng
gth(IF =50 mA, -30℃
℃≤ T≤ 80℃
℃)
Temperatture coefficient of fo
orward
voltage(IF = 50 mA
A, -30℃≤ T≤ 80℃)
Thermal resistance
e
Rth_J--S
(Junction
n to Solder point)
(Elec.)
[1]
[
ous Inten
nsity Bin[2]
 Lumino
Symbo
ol
IV, ΦV
Condition
IF = 50mA
[TJ = 25℃]
Luminous Inte
ensity
L
Luminous
s Flux[3]
IV [cd]
ΦV [lm]
Bin Cod
de
Min.
Max.
M
Min.
Max.
BA
1.8
2.24
2
5.4
6.72
BB
2.2
24
2.80
2
6.72
8.40
CA
2.8
80
3.55
3
8.40
10.65
* Note
[1] Measure
ement condition : LED(T
TJ) = Ambie
ent temperatture(TA), by applying puulse current for under
25 ms.
[2] Luminou
us intensity measuring equipment
e
: CAS140CT
T
IV and VF tolerances are ±10%
% and ±0.1 V
V, respective
ely.
[3] Luminou
us flux value
e is just refference purp
poses. LED are sorted by the valuee of luminou
us intensity.
2015/08/03
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SPMRDT
T3215A0
0
[1]
[TJ = 25℃]
‧ Forwa
ard Volta
age Bin[2]]
Symbo
ol
VF
Condition
Bin Cod
de
Min.
Typ.
T
Max.
E1
1.9
-
2.05
E2
2.0
05
-
2.2
IF = 50mA
V
E3
2.2
20
-
2.35
E4
2.3
35
-
2.5
[1]
[TJ = 25℃]
‧ Dominant Wa
avelength
h Bin[4]
Symbol
Co
ondition
λD
IF = 50mA
Bin Cod
de
Min.
Typ.
T
Max.
C1
615
5.0
-
619.5
Unit
nm
C2
619
9.5
* Note
[4] Wavelen
ngth measurring equipment : CAS14
40CT
tolerance ±2 nm
2015/08/03
3/Rev.05
Unit
- 5 -
-
624.0
SPMRDT
T3215A0
0
Absolute Ma
aximum Rating
gs
Parrameter
Sym
mbol
Valu
ue
Unit
Operating
g tempera
ature range
e
TOPR
-40 ~ 100
℃
Storage temperature range
TSTG
-40 ~ 100
℃
TJ_Max.
1255
℃
IF
700
mA
IF
5
mA
IFM
1000
mA
VR
5
V
PTOT
1800
㎽
-
±22
kV
Junction temperatu
ure
Maximum
m forward current[5]
(TJ : 25℃
℃)[6]
Minimum
m forward ccurrent[5]
(TJ : 25℃
℃)[6]
Maximum
m peaked current
(TJ : 25℃
℃)[6]
Reverse voltage
(TJ : 25℃
℃)[6]
Power co
onsumption
(TJ : 25℃
℃)[6]
ESD sen
nsitivity(HB
BM)
* Notes
ormance may
y be resulte
ed by driving
g the produc
ct at below Min. IF or above
a
Max.
[5] Unpredictable perfo
IF.
is excludedd by applyin
[6] The me
easurement condition me
eans that te
emperature dependence
d
ng pulse
current for under 25 ms..
m
2015/08/03
3/Rev.05
- 6 -
SPMRDT
T3215A0
0
Typica
al Charracteristtics Grraph
 Typiccal Specttrum
: IF = 50 mA, TJ = 25°C
C[6]
ength Sh
hift vs An
ngle
 Wavele
: IF = 50 mA, TJ = 25°C
C[6]
2015/08/03
3/Rev.05
- 7 -
SPMRDT
T3215A0
0
‧ Relattive Lum
minous Inttensity & Forward Voltage
e vs Forrward Cu
urrent
: TJ = 25°C[6]
d Currentt
 Wavvelength Shift vs Forward
: Reference poinnt_IF = 500 mA, TJ = 25°C[6]
2015/08/03
3/Rev.05
- 8 -
SPMRDT
T3215A0
0
‧ Relattive Lum
minous Inttensity & Forward Voltage
e vs Tem
mperature
e
: Reference poinnt_25℃, IF = 50 mA
A
ature
 Wavvelength Shift vs Tempera
: Reference poinnt_25℃, IF = 50 mA
A
2015/08/03
3/Rev.05
- 9 -
SPMRDT
T3215A0
0
‧ Typiccal Radia
ant Patte
ern
: IF = 50 mA, TJ = 25°C[66]
‧ Max. Permisssible Forrward Cu
urrent
: IF = f (Tc)
2015/08/03
3/Rev.05
- 10 -
SPMRDT
T3215A0
0
Mecha
anical Dimens
D
sion[7]
②
An
node mark
①
* Note
[7] Unit : m
mm, Tolerancce : ±0.10m
mm
Do not place presssure on the encapsulatin
ng resin (ha
atch area)
on the polym
mer
The maximum compressing forrce is 15N o
‧ Electtric Sche
ematic Diagram
②
①
2015/08/03
3/Rev.05
- 11 -
SPMRDT
T3215A0
0
Solde
ering Infformation
Configurattion & Solder Pa
ad Layout[8]
 Pad C
* Note
[8] Unit : m
mm, Tolerancce : ±0.10m
mm
w Soldering Cond
dition (Pb
b Free)
 Reflow
Reflow
w Frequency : 2 tim
mes max.
al Solderiing Cond
dition
 Manua
Not m
more than 5 seconds
s @MAX3
300℃, und
der soldering iron.(o ne time only)
o
2015/08/03
3/Rev.05
- 12 -
SPMRDT
T3215A0
0
Packin
ng Info
ormation
n
 Taping[9]
A
B
4.0±0.10
4.0±1.0
C
2 ±
2.0
D
0.05
1.7
75±
E
0.10
5.5 ±
G
F
12.0±
0.05
0.10
3.2±
H
3.83±
0.10
I
00.10
0.23±
J
2.17±
0.02
* Not
mm, Cumula
ative toleranc
ce/10 pitche
es to be ±0.2mm
[9] Unit : m
LED ta
aping quantitty : 2,000EA
A / Reel.
Adhesio
on Strength of Cover Tape
T
: Adhession strength
h to be 0.1--0.7N when the cover tape
t
is
turned off from the
e carrier tap
pe at 10˚
a
angle to be the carrier tape.
 Reel[10]]
A
180.0
0
B
-3.0
60
±1.0
0
C
13.0
W1
± 0.3
[10] Unit : mm
2015/08/03
3/Rev.05
- 13 -
13.0
± 0.5
W2
W
15.4
4
± 1.0
0.10
0
SPMRDT
T3215A0
0
‧ Packing Box information
Dimension
n of Transsportation Box in m
mm
W
Width
Length
Height
Reels//box
2
245
220
182
Up to 10
0 Reels
2
245
220
86
Up to 5 Reels

2015/08/03
3/Rev.05
- 14 -
SPMRDT
T3215A0
0
Produ
uct Labeling In
nformattion
 Label Informatiion
A
ABCDEF
F
Bin Code
Part Number
SPMR
RDT3215A0 ABCD
DEF XXXX
IIIIIIIIIIIIIIIIIIIIIIIIIIIII
①②③④
④⑤⑥⑦⑧⑨ / 1ⓐⓑⓒ / 1,000 PCS
P
IIIIIIIIIIIIIIIIIIIIIIIIII
ber
Lot Numb
1. Bin C
Code
AB : Forwarrd Voltage
e(VF) Bin
CD : Domina
ant Wavellength(λD) Bin
EF : Lumino
ous Intens
sity(IV) Bin
2. Lot No.
00 PCS
①②③④
④⑤⑥⑦⑧
⑧⑨ / 1ⓐⓑ
ⓑⓒ / 2,00
①
: Producttion Site (S:SAMSU
(
UNG KORE
EA, G:TIA
ANJIN CHI NA)
②
④
: L (LED)
: Productt State (A
A:Normalityy, B:Bulk, C:First Pro
oduction, R:Reprodu
uction,
S:Sample)
: Year (X
X:2013, Y:2
2014, Z:20
015 ...)
⑤
: Month (1 ~ 9, A, B, C)
⑥
: Day (1 ~ 9, A, B ~ V)
③
⑦⑧⑨ : SAMSU
UNG ELEC
CTRONICS
S Product number (1
( ~ 999)
ⓐⓑⓒ : Reel Number (1 ~ 999)
2015/08/03
3/Rev.05
- 15 -
SPMRDT
T3215A0
0
Reliab
bility Te
est Con
nditions
s
Fo
or dettailed Inforrmatio
on ple
ease conta
act
your SA
AMSU
UNG S
Sales partn
ner
2015/08/03
3/Rev.05
- 16 -
SPMRDT
T3215A0
0
Preca
aution fo
or Use
1) For ovver-current--proof functtion, custom
mers are re
ecommended to applyy resistors to
preven
nt sudden change of the curren
nt caused by
b slight sh
hift of the vvoltage.
2) This d
device shou
uld not be used in an
ny type of fluid such as water, oil, organiic
solve
ent, etc. When
W
wash
hing is requ
uired, IPA is recomme
ended to u se.
ecided afterr considerin
ng the
3) When the LEDs illuminate, operating current should be de
ent maximum tempera
ature.
ambie
s
in a clean env ironment.
4) LEDs must be stored
months or more
m
after being shippped from
If the LEDs are to be storred for 3 m
onics, they should be
e packed by a sealed container with nitrog
gen gas
ung Electro
Samsu
injecte
ed.(Shelf liffe of sealed
d bags: 12
2 months, te
emp. ~40 ℃,
℃ ~90 % R
RH)
5) After sstorage bag
g is open, device sub
bjected to soldering, solder refloow, or othe
er
high ttemperature
e processes
s must be::
a. Mo
ounted within 672 hours (28 dayss) at an as
ssembly line with a coondition of no
morre than 30 ℃/60 %RH
H,
b. Sto
ored at <10
0 %RH.
w
anti-mo
oisture pac
cking, fold to
t close anny opening and
6) Repacck unused Products with
then sstore in a dry place.
es require baking beffore mountiing, if humidity card reading
r
is >60 %
7) Device
at 23±
±5 ℃.
8) Device
es must be
e baked forr 1 day at 65±5 ℃, if baking is required.
9) The L
LEDs are sensitive to the static electricity and
a
surge. It is recoommended to
d or anti-electrostatic glove whe
en handling
g the LEDss.
use a wrist band
ding the ab
bsolute ma
aximum ratiing is appliied to LED
Ds, it may cause
c
If voltage exceed
ge or even
n destructio
on to LED devices.
damag
aged LEDs may show
w some unu
usual chara
acteristics such
s
as inccrease in leak
Dama
nt, lowered turn-on vo
oltage, or a
abnormal lig
ghting of LEDs
L
at low
w current.
curren
2015/08/03
3/Rev.05
- 17 -
SPMRDT
T3215A0
0
ccurred by adhesives,, flux, hard
dener or
10) VOCs (volatile organic compounds) may be oc
nic additive
es which is
s used in lu
uminaires (fixture)
(
and LED siliccone bags are
organ
perm
meable to itt. It may le
ead a disco
oloration wh
hen LED expose
e
to hheat or ligh
ht.
non can giv
ve a signifi cant loss of
o light emitted (outpuut) from the
e
This phenomen
naires (fixtu
ures).
lumin
In orrder to prevvent these problems, we recom
mmend you to know thhe physical
prope
erties for th
he materials used in luminaires, It requires to selectt carefully.
11) Risk of Sulfurization (or Tarnishing)
T
The le
ead frame from Sams
sung Electrronics is a plated pac
ckage and it may cha
ange to
black((or dark co
olored)
when it is exxposed to Ag
A (a), Sulffur (S), Ccchlorine (Cl) or other
haloge
en compou
und. It requ
uires attentiion.
e (Sulfuriza
ation) of the lead fram
me may ca
ause a change of deggradation in
ntensity,
Sulfide
chrom
maticity coordinates an
nd it may ccause open
n circuit
in
n extreme cases. It re
equires
attentiion.
Sulfide
e (Sulfuriza
ation) of the lead fram
me may ca
ause of sto
orage and uusing with oxidizing
substa
ances together. There
efore, LED is not reco
ommend to
o use and store with the
below list.
d solder cre
eam etc
: Rubber, Plain paper, lead
2015/08/03
3/Rev.05
- 18 -
SPMRDT
T3215A0
0
Revision His
story
Date
Revision
R
H
History
2010.10.18
Author
Draw
wn
Ap
pproved
Initial Ed
dition
W.H. Juunh
Y.H
H. Song
2012.10.08
Speciffication for mat chang
ge
J.C. Kaang
S..H. Lee
2012.11.07
Electric Sc
chematic in
ncorrect ch
hange
J.C. Kaang
S..H. Lee
2013.02.15
Prrecaution R
Revision
J.C. Kaang
S..H. Lee
2014.01.27
Ad
ddition of b
box size
J.C. Kaang
S..H. Lee
2015.08.03
Modify of Packing
g Information
S.Y. Hoong
S.B
B. Kwak
Company Infformatio
on
amsung Sem
miconductorr Inc.,
US Sa
3655 N. First Street, San Jose CA
A 95134, USA
A
TEL. +1
1-408-544-400
00
Europe
e
Samsun
ng Electronics
s Germany Gm
mbH, Samsun
ng House,
Am Kro
onberger Hang
g 6, Schwalbaach/Ts,German
ny
TEL. +4
49-6196-66-0
0
Copyright @1995-2015
All rights re
eserved
Samsung
g Electron
nics
95, Samsun
ng 2-ro, Giheung-Gu,
Yongin-Cityy, Gyeongii-Do 446-711 Korea
Japan
Samsun
ng Japan Corporation SLED
D Team 10F, Shinagawa
Grand Central
C
Towerr 2-16-4, Kouunan, Minato-ku, Tokyo
108-824
40, Japan
TEL. +8
81-3-6369-63
327
China (Tianjin Offfice in Chin
na)
http://www
w.samsung
g.com/sec/b
business/#
#
Sales Conttact : [email protected]
ung.com
2015/08/03
3/Rev.05
Tianjin Samsung LED
D Co., LTD.
Weisi (6
6th) Rd., Micrro-Electronics Industrial Pa
ark, Xiqing
District, Tianjin 30038
85, China
TEL. +8
86-755-8608-5
5550
- 19 -
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