4N32, 4N33 Datasheet

4N32, 4N33
Vishay Semiconductors
Optocoupler, Photodarlington Output, High Gain,
with Base Connection
FEATURES
A
1
6 B
C
2
5 C
NC
3
4 E
• Very high current transfer ratio, 500 % min.
• High isolation resistance, 1011  typical
• Standard plastic DIP package
• Compliant to RoHS Directive to 2002/95/EC
and in accordance WEEE 2002/96/EC
i179005_1
V
D E
AGENCY APPROVALS
i179005
• UL1577, file no. E52744 system code H
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5
(pending), avialable with option 1
DESCRIPTION
The 4N32 and 4N33 are optically coupled isolators with a
gallium arsenide infrared LED and a solicon photodarlington
sensor.
Switching can be achieved while maintaining a high degree
of isolation between driving and load circuits.
These optocouplers can be used to replace reed and
mercury relays with advantages of long life, high speed
switching and elimination of magnetic fields.
• BSI IEC60950; IEC60065
• FIMKO
ORDERING INFORMATION
4
N
3
#
PART NUMBER
-
X
0
#
#
PACKAGE OPTION
DIP
Option 6
7.62 mm
10.16 mm
Option 7
Option 9
T
TAPE AND
REEL
> 0.1 mm
> 0.7 mm
AGENCY CERTIFIED/PACKAGE
CTR (%)
UL, BSI, FIMKO
 500
 500
DIP-6
4N32
4N33
DIP-6, 400 mil, option 6
SMD-6, option 7
SMD-6, option 9
4N32-X006
-
4N32-X007T
(1)
4N33-X007T (1)
4N32-X009T
(1)
4N33-X009T (1)
 500
 500
DIP-6
4N32-X001
4N33-X001
SMD-6, option 7
4N32-X017T
4N33-X017T (1)
VDE, UL, BSI, FIMKO
Notes
• Additional options may be possible, please contact sales office.
(1) Also available in tubes, do not put T on the end.
Document Number: 81865
Rev. 1.2, 15-Feb-11
For technical questions, contact: [email protected]
www.vishay.com
1
4N32, 4N33
Vishay Semiconductors
Optocoupler, Photodarlington
Output, High Gain, with Base
Connection
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
3
V
Forward current
IF
60
mA
Power dissipation
Pdiss
Derate linearly
from 55 °C
100
mW
1.33
mW/°C
OUTPUT
Collector emitter breakdown voltage
BVCEO
30
V
Emitter base breakdown voltage
BVEBO
8
V
Collector base breakdown voltage
BVCBO
50
V
Emitter collector breakdown voltage
BVECO
5
V
IC
100
mA
Pdiss
150
mW
2
mW/°C
Collector (load) current
Power dissipation
Derate linearly
COUPLER
Total dissipation
Ptot
250
mW
3.3
mW/°C
Derate linearly
Isolation test voltage (between emitter
1s
VISO
5300
VRMS
7
mm min.
Leakage path
Air path
7
mm min.
VIO = 500 V, Tamb = 25 °C
RIO
1012

VIO = 500 V, Tamb = 100 °C
RIO
 1011

Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Isolation resistance
Lead soldering time (1)
at 260 °C
10
s
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 50 mA
VF
1.25
1.5
V
Reverse current
VR = 3 V
IR
0.1
100
μA
Capacitance
VR = 0 V
CO
25
pF
OUTPUT
Collector emitter breakdown voltage (1)
IC = 100 μA, IF = 0
BVCEO
30
Collector base breakdown voltage (1)
IC = 100 μA, IF = 0
BVCBO
50
V
Emitter base breakdown voltage (1)
IC = 100 μA, IF = 0
BVEBO
8
V
Emitter collector breakdown voltage (1)
IC = 100 μA, IF = 0
BVECO
5
Collector emitter leakage current
VCE = 10 V, IF = 0
ICEO
IC = 0.5 mA, VCE = 5 V
hFE
V
10
1
V
100
nA
13
COUPLER
Collector emitter saturation voltage
VCEsat
1
V
Coupling capacitance
1.5
pF
Notes
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(1) Indicates JEDEC registered values.
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2
For technical questions, contact: [email protected]
Document Number: 81865
Rev. 1.2, 15-Feb-11
4N32, 4N33
Optocoupler, Photodarlington
Output, High Gain, with Base
Connection
Vishay Semiconductors
CURRENT TRANSFER RATIO
PARAMETER
Current transfer ratio
TEST CONDITION
SYMBOL
MIN.
VCE = 10 V, IF = 10 mA
CTR
500
MIN.
TYP.
MAX.
UNIT
%
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MAX.
UNIT
Turn-on time
VCC = 10 V, IC = 50 mA
ton
TYP.
5
μs
Turn-off time
IF = 200 mA, RL = 180 
toff
100
μs
MAX.
UNIT
SAFETY AND INSULATION RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Climatic classification
(according to IEC 68 part 1)
TYP.
55/100/21
Comparative tracking index
CTI
175
399
VIOTM
8000
V
VIORM
890
V
PSO
700
mW
ISI
400
mA
TSI
175
°C
Creepage distance
Standard DIP-6
7
mm
Clearance distance
Standard DIP-6
7
mm
Creepage distance
400 mil DIP-6
8
mm
Clearance distance
400 mil DIP-6
8
mm
Insulation thickness,
reinforced rated
per IEC 60950 2.10.5.1
0.4
mm
Note
• As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1.0
10
Normalized to:
VCE = 5 V
IF = 10 mA
0.8
TA = 25 °C
VCE = 5 V
0.6
0.4
0.2
NICE - Normalized ICE
NCTRCE - Normalized CTRCE
1.2
Normalized to:
VCE = 5 V
1 IF = 10 mA
VCE = 5 V
TA = 25 °C
VCE = 1 V
0.1
0.01
VCE = 1 V
0.0
0.1
i4n32-33_02
1
10
100
1000
IF - LED Current (mA)
Fig. 1 - Normalized Non-Saturated and Saturated CTRCE vs.
LED Current
Document Number: 81865
Rev. 1.2, 15-Feb-11
0.001
0.1
i4n32-33_03
1
10
100
IF - LED Current (mA)
Fig. 2 - Normalized Non-Saturated and Saturated Collector Emitter
Current vs. LED Current
For technical questions, contact: [email protected]
www.vishay.com
3
4N32, 4N33
Optocoupler, Photodarlington
Output, High Gain, with Base
Connection
Vishay Semiconductors
20
Normalized to:
VCB = 3.5 V
1
IF = 10 mA
tpHL - High/Low Propagation
Delay (µs)
NICB - Normalized ICB
10
TA = 25 °C
0.1
0.01
1 kΩ
10
1
10
0
100
0
IF = LED Current (mA)
i4n32-33_04
100 Ω
5
0.001
0.1
TA = 25 °C
VCC = 5 V
VTH = 1.5 V
15
10
5
15
20
IF - LED Current (mA)
i4n32-33_07
Fig. 6 - High to Low Propagation Delay vs.
Collector Load Resistance and LED Current
Fig. 3 - Normalized Collector Base Photocurrent vs.
LED Current
10 000
hFE - Forward Transfer Gain
TA = 25 °C
VCE = 5 V
IF
8000
VCC
RL
6000
VO
4000
tD
tR
VO
tPLH
IF
VCE = 1 V
2000
VTH = 1.5 V
tPHL
0
0.01
0.1
1
10
100
tS
tF
i4n32-33_08
Ib - Base Current (µA)
i4n32-33_05
Fig. 4 - Non-Saturated and Saturated hFE vs.
Base Current
Fig. 7 - Switching Waveform and Switching Schematic
tpLH - Low/High Propagation
Delay (µs)
80
TA = 25 °C, VCC = 5 V
VTH = 1.5 V
1 kΩ
60
220 Ω
40
470 Ω
20
100 Ω
0
0
i4n32-33_06
5
10
15
20
IF - LED Current (mA)
Fig. 5 - Low to High Propagation Delay vs.
Collector Load Resistance and LED Current
www.vishay.com
4
For technical questions, contact: [email protected]
Document Number: 81865
Rev. 1.2, 15-Feb-11
4N32, 4N33
Optocoupler, Photodarlington
Output, High Gain, with Base
Connection
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
DIP-6 Package Dimensions
Pin one ID
3
2
1
4
5
6
6.4 ± 0.1
ISO method A
8.6 ± 0.1
7.62 typ.
1.2 ± 0.1
1 min.
3.555 ± 0.255
18°
4° typ.
2.95 ± 0.5
0.8 min.
0.85 ± 0.05
0.25 typ.
3° to 9°
0.5 ± 0.05
7.62 to 8.81
i178004
2.54 typ.
Option 6
Option 7
Option 9
7.62 typ.
7.62 typ.
10.3 max.
7.62 typ.
0.7 min.
3.5 ± 0.3
4.3 ± 0.3
0.1 ± 0.1
3.6 ± 0.3
0.1 min.
8 min.
2.55 ± 0.25
0.6 min.
10.3 max.
0.6 min.
8 min.
10.16 typ.
0.76
R 0.25
2.54
0.76
2.54
R 0.25
1.78
8 min.
11.05
20802-24
1.52
1.78
8 min.
11.05
1.52
PACKAGE MARKING
4N32
-X017
V YWW H 68
21764-18
Notes
• Example marking for 4N32-X017T.
• Only options 1, and 7 reflected in the package marking.
• The VDE logo is only marked on option 1 parts.
• Tape and reel suffix (T) is not part of the package marking.
Document Number: 81865
Rev. 1.2, 15-Feb-11
For technical questions, contact: [email protected]
www.vishay.com
5
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
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of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000
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