4N32/ 4N33 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, With Base Connection Features • • • • • Very high current transfer ratio, 500 % Min. High isolation resistance, 1011 Ω Typical Standard plastic DIP package Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Agency Approvals A 1 6 B C 2 5 C NC 3 4 E e3 i179005 • UL1577, File No. E52744 System Code H or J, Double Protection Pb Pb-free Order Information • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 • BSI IEC60950 IEC60065 Part Description The 4N32 and 4N33 are optically coupled isolators with a gallium arsenide infrared LED and a solicon photodarlington sensor. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. Remarks 4N32 CTR > 500 %, DIP-6 4N33 CTR > 500 %, DIP-6 4N32-X007 CTR > 500 %, SMD-6 (option 7) 4N32-X009 CTR > 500 %, SMD-6 (option 9) 4N33-X007 CTR > 500 %, SMD-6 (option 7) 4N33-X009 CTR > 500 %, SMD-6 (option 9) For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Test condition Peak reverse voltage Forward continuous current Power dissipation Derate linearly Document Number 83736 Rev. 1.4, 26-Jan-05 from 55 °C Symbol Value Unit VR 3.0 V IF 60 mA Pdiss 100 mW 1.33 mW/°C www.vishay.com 1 4N32/ 4N33 Vishay Semiconductors Output Symbol Value Unit Collector-emitter breakdown voltage Parameter Test condition BVCEO 30 V Emitter-base breakdown voltage BVEBO 8.0 V Collector-base breakdown voltage BVCBO 50 V Emitter-collector breakdown voltage BVECO 5.0 V IC 125 mA Pdiss 150 mW 2.0 mW/°C Collector (load) current Power dissipation Derate linearly Coupler Parameter Test condition Symbol Value Unit Ptot 250 mW 3.3 mW/° VISO 5300 VRMS Leakage Path 7.0 mm min. Air Path 7.0 mm min. Total dissipation Derate linearly Isolation test voltage (between emitter and detector, Standard Climate: 23 °C/ 50 %RH, \\nDIN 500 14) Isolation Resistance VIO = 500 V, Tamb = 25 °C RIO VIO = 500 V, Tamb = 100 °C RIO Storange temperature Operating temperature Lead soldering time ≥ Ω 1012 ≥ 10 Ω 11 Tamb - 55 to + 150 °C Tstg - 55 to + 100 °C 10 s at 260 °C Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Typ. Max Unit Forward voltage Parameter IF = 50 mA VF 1.25 1.5 V Reverse current VR = 3.0 V IR 0.1 100 µ Capacitance VR = 0 V CO 25 www.vishay.com 2 Test condition Symbol Min pF Document Number 83736 Rev. 1.4, 26-Jan-05 4N32/ 4N33 Vishay Semiconductors Output Parameter Test condition Collector-emitter breakdown Symbol Min IC = 100 µA, IF = 0 BVCEO 30 Typ. Max Unit V IC = 100 µA, IF = 0 BVCBO 50 V IC = 100 µA, IF = 0 BVEBO 8.0 V IC = 100 µA, IF = 0 BVECO 5.0 VCE = 10 V, IF = 0 ICEO IC = 0.5 mA, VCE = 5.0 V hFE 13 Symbol Min voltage1) Collector-base breakdown voltage1) Emitter-base breakdown voltage1) Emitter-collector breakdown 10 V voltage1) Collector-emitter leakage current 1) 1.0 100 nA Typ. Max Unit Indicates JEDEC registered values Coupler Parameter Test condition VCEsat Colector emitter saturation voltage Coupling capacitance 1.0 V 1.5 pF Current Transfer Ratio Parameter Test condition Current Transfer Ratio VCE = 10 V, IF = 10 mA, Symbol Min CTR 500 Symbol Min Typ. Max Unit % Switching Characteristics Max Unit Turn on time Parameter VCC = 10 V, IC = 50 mA Test condition ton Typ. 5.0 µs Turn off time IF = 200 mA, RL = 180 Ω toff 100 µs Typical Characteristics (Tamb = 25 °C unless otherwise specified) 1.0 0.8 10 Normalized to: Vce = 5 V IF = 10 mA Ta = 25°C Vce = 5 V 0.6 0.4 0.2 Vce =1V 0.0 .1 1 10 100 1000 IF - LED Current - mA i4n32-33_02 Figure 1. Normalized Non-saturated and Saturated CTRCE vs. LED Current Document Number 83736 Rev. 1.4, 26-Jan-05 1 NIce - Normalized Ice NCTRce - Normalized CTRce 1.2 Normalized to: Ta = 25°C IF = 10 mA Vce = 5 V Vce = 5 V Vce = 1V .1 .01 .001 .1 10 1 IF - LED Current - mA 100 i4n32-33_03 Figure 2. Normalized Non-Saturated and Saturated CollectorEmitter Current vs. LED Current www.vishay.com 3 4N32/ 4N33 Vishay Semiconductors 20 Normalized to: Ta = 25°C Vcb = 3.5 V IF = 10 mA 1 tpHL - High/Low Propagation delay - µs NIcb - Normalized Icb 10 .1 .01 1kΩ 10 .001 .1 1 10 IF - LED Current - mA 100Ω 5 0 0 100 5 10 15 20 IF - LED Current - mA i4n32-33_04 i4n32-33_07 Figure 3. Normalized Collector-Base Photocurrent vs. LED Current 10000 HFE - Forward Transfer Gain Ta = 25°C Vcc = 5 V Vth = 1.5 V 15 Ta = 25°C Figure 6. High to low Propagation Delay vs. Collector Load Resistance and LED Current Vce = 5 V 8000 IF VCC RL 6000 4000 VO Vce = 1 V 2000 0 .01 .1 1 10 tD tR tPHL 100 VO tPLH tS IF VTH=1.5 V tF Ib - Base Current - µA i4n32-33_05 i4n32-33_08 Figure 4. Non-Saturated and Saturated HFE vs. Base Current Figure 7. Switching Waveform and Switching Schematic tpLH - Low/High Propagation Delay - µS 80 Ta = 25°C, Vcc = 5V Vth = 1.5 V 1.0 kΩ 60 220 ıΩˇ 40 470 Ω 20 100 Ω 0 0 5 10 15 20 IF - LED Current - mA i4n32-33_06 Figure 5. Low to High Propagation Delay vs. Collector Load Resistance and LED Current www.vishay.com 4 Document Number 83736 Rev. 1.4, 26-Jan-05 4N32/ 4N33 Vishay Semiconductors Package Dimensions in Inches (mm) For 4N32/33..... see DIL300-6 Package dimension in the Package Section. For products with an option designator (e.g. 4N32-X007 or 4N33-X009)..... see DIP-6 Package dimensions in the Package Section. DIL300-6 Package Dimensions 14770 DIP-6 Package Dimensions 3 2 1 4 5 6 pin one ID .248 (6.30) .256 (6.50) ISO Method A .335 (8.50) .343 (8.70) .039 (1.00) Min. 4° typ. .018 (0.45) .022 (0.55) .300 (7.62) typ. .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) 18° .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3°–9° .114 (2.90) .130 (3.0) .010 (.25) typ. .300–.347 (7.62–8.81) i178004 Document Number 83736 Rev. 1.4, 26-Jan-05 www.vishay.com 5 4N32/ 4N33 Vishay Semiconductors Option 7 Option 9 .375 (9.53) .395 (10.03) .300 (7.62) TYP. .300 (7.62) ref. .028 (0.7) MIN. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .331 (8.4) MIN. .406 (10.3) MAX. www.vishay.com 6 .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15° max. 18494 Document Number 83736 Rev. 1.4, 26-Jan-05 4N32/ 4N33 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83736 Rev. 1.4, 26-Jan-05 www.vishay.com 7