CNY651 Series Datasheet

CNY651 Series
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Vishay Semiconductors
Optocoupler, Phototransistor Output, Very High Isolation Voltage
FEATURES
• Rated recurring peak voltage (repetitive)
VIORM = 1450 Vpeak
• Thickness through insulation ≥ 3 mm
• Creepage current resistance according to
VDE 0303/IEC 60112 comparative tracking
index: CTI ≥ 475
• Moisture sensitivity level MSL4
- Follow defined storage and soldering
requirements for CNY651ST devices
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Top View
CNY651ST
A
C
C
E
CNY651
V
D E
APPLICATIONS
17187-5
• Solar and wind power diagnostic, monitoring, and
communication equipment
• Welding equipment
• High voltage motors
• Switch-mode power supplies
• Line receiver
• Computer peripheral interface
• Microprocessor system interface
• Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
- for appl. class I to IV at mains voltage ≤ 300 V
- for appl. class I to IV at mains voltage ≤ 600 V
- for appl. class I to III at mains voltage ≤ 1000 V
according to DIN EN 60747-5-5 (VDE 0884-5)
DESCRIPTION
The CNY651 Series are high isolation voltage TH and SMD
version optocouplers consist of a phototransistor optically
coupled to a gallium arsenide infrared-emitting diode in a
4 pin plastic package.
The single components are mounted opposite one another,
providing a distance between input and output for highest
safety requirements of > 3 mm.
VDE STANDARDS
These couplers perform safety functions according to the
following equipment standards:
• DIN EN 60747-5-5 (VDE 0884-5)
Optocoupler for electrical safety requirements
AGENCY APPROVALS
Safety application model number covering all products in
this datasheet is CNY651. This model number should be
used when consulting safety agency documents.
• DIN EN 60747-5-5 (VDE 0884-5)
• UL1577, file no. E76222
• VDE related features:
- rated impulse voltage (transient overvoltage),
VIOTM = 12 kVpeak
- isolation test voltage (partial discharge test voltage),
Vpd = 2.8 kVpeak
ORDERING INFORMATION
C
N
Y
6
PART NUMBER
5
1
X
X
X
PACKAGE
OPTION
DIP-4 HV, 600 mil high isolation distance
SMD-4 HV, 600 mil high isolation distance
Rev. 1.0, 12-Feb-14
T
CTR BIN
CNY651
CNY651ST
15.24 mm
15.24 mm
CTR (%)
AGENCY CERTIFIED/PACKAGE
UL, VDE
S
5 mA
50 to 150
100 to 300
-
CNY651AGR
CNY651AYST
CNY651AGRST
Document Number: 82566
1
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ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
5
V
Forward current
IF
75
mA
tp ≤ 10 μs
Forward surge current
IFSM
1.5
A
Pdiss
120
mW
Tj
125
°C
Collector emitter voltage
VCEO
32
V
Emitter collector voltage
VECO
7
V
Power dissipation
Junction temperature
OUTPUT
Collector current
tp/T = 0.5, tp ≤ 10 ms
Collector peak current
Power dissipation
Junction temperature
IC
50
mA
ICM
100
mA
Pdiss
130
mW
Tj
125
°C
COUPLER
DC isolation test voltage CNY651A...ST
VISO
13.9
kV
Total power dissipation
t=1s
Ptot
250
mW
Ambient temperature range
Tamb
-40 to +110
°C
Tstg
-40 to +110
°C
Tsld
260
°C
Storage temperature range
Soldering temperature
2 mm from case, ≤ 10 s
Ptot - Total Power Dissipation (mW)
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
300
250
Coupled device
200
Phototransistor
150
100
IR-diode
50
0
0
40
80
120
Tamb - Ambient Temperature (°C)
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
Rev. 1.0, 12-Feb-14
Document Number: 82566
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ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
1.6
UNIT
INPUT
Forward voltage
IF = 50 mA
VF
1.32
VR = 0 V, f = 1 MHz
Cj
50
Collector emitter voltage
IC = 1 mA
VCEO
32
Emitter collector voltage
IE = 100 μA
VECO
7
VCE = 20 V, IF = 0 mA
ICEO
200
nA
IF = 10 mA, IC = 1 mA
VCEsat
0.3
V
Junction capacitance
V
pF
OUTPUT
Collector emitter leakage current
V
V
COUPLER
Collector emitter saturation voltage
Cut-off frequency
VCE = 5 V, IF = 10 mA, RL = 100 Ω
fc
110
kHz
f = 1 MHz
Ck
0.3
pF
Coupling capacitance
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
IC/IF
TEST CONDITION
VCE = 5 V, IF = 5 mA
BIN
SYMBOL
MIN.
AY.
CTR
50
TYP.
MAX.
150
UNIT
%
AGR.
CTR
100
300
%
SAFETY AND INSULATION RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Output safety power
PSO
250
mW
Input safety current
Isi
120
mW
Safety temperature
TS
150
°C
Comparative tracking index
CTI
475
VISO
8200
VRMS
Maximum transient isolation voltage
VIOTM
12 000
Vpeak
Maximum repetitive peak isolation voltage
VIORM
1450
Vpeak
MAXIMUM SAFETY RATINGS
INSULATION RATED PARAMETERS
Maximum withstanding isolation voltage
Insulation resistance
Tamb = 25 °C, VDC = 500 V
RIO
≥ 1012
Ω
Isolation resistance
Tamb = 100 °C, VDC = 500 V
RIO
≥ 1011
Ω
Climatic classification (according to IEC 68 part 1)
40/110/21
Environment (pollution degree in accordance to DIN VDE 0109)
2
Creepage
Insulation thickness
DTI
≥ 14
mm
3
mm
Note
• According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Rev. 1.0, 12-Feb-14
Document Number: 82566
3
For technical questions, contact: [email protected]
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VIOTM
250
225
t1, t2
t3 , t4
ttest
tstres
Pso (mW)
200
175
150
Vpd
125
VIOWM
VIORM
100
75
= 1 s to 10 s
=1s
= 10 s
= 12 s
Isi (mA)
50
25
0
t3 ttest t4
0
0
25
50
75 100 125 150 175 200
tTr = 60 s
t1
13930
t2
Tamb (°C)
22292
t stres
t
Fig. 2 - Safety Derating Diagram
Fig. 3 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-5 (VDE 0884-5); IEC60747-5-5
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Delay time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3)
td
2.6
μs
Rise time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3)
tr
2.4
μs
Fall time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3)
tf
2.7
μs
Storage time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3)
ts
0.3
μs
Turn-on time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3)
ton
5
μs
Turn-off time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3)
toff
3
μs
Turn-on time
VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4)
ton
25
μs
Turn-off time
VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4)
toff
42.5
μs
IF
0
+5V
IF
IF
IC = 5 mA; adjusted through
input amplitude
0
tp
IC
100 %
90 %
RG = 50
tp
= 0.01
T
tp = 50 µs
Channel I
Channel II
50
100
Oscilloscope
RL 1 M
CL 20 pF
10 %
0
tr
td
t on
95 10900
Fig. 4 - Test Circuit, Non-Saturated Operation
IF
t
+5V
I F = 10 mA
0
tp
td
tr
t on (= td + tr)
Pulse duration
Delay time
Rise time
Turn-on time
ts
tf
t off
ts
tf
t off (= ts + tf)
t
Storage time
Fall time
Turn-off time
96 11698
Fig. 6 - Switching Times
IC
R G = 50 Ω
tp
= 0.01
T
t p = 50 µs
Channel I
Channel II
50 Ω
Oscilloscope
R L ≥ 1 MΩ
C L ≤ 20 pF
1 kΩ
95 10843
Fig. 5 - Test Circuit, Saturated Operation
Rev. 1.0, 12-Feb-14
Document Number: 82566
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For technical questions, contact: [email protected]
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CNY651 Series
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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10 000
Tamb = 110 °C
Tamb = 25 °C
Tamb = 0 °C
Tamb = -40 °C
10
ICEO - Leakage Current (nA)
IF - Forward Current (mA)
100
1
0.1
0.6
0.8
1.0
1.2
1.4
1000
100
10
VCE = 12 V
1 V = 24 V
CE
0.1
0.001
-55 -35 -15
1.6
5
25
45
65
85 105 125
Tamb - Ambient Temperature (°C)
Fig. 7 - Forward Current vs. Forward Voltage
Fig. 10 - Leakage Current vs. Ambient Temperature
1.2
40
NCTR - Normalized CTR (sat.)
45
IC - Collector Current (mA)
VCE = 40 V
0.01
VF - Forward Voltage (V)
IF = 30 mA
35
30
IF = 20 mA
25
20
IF = 15 mA
15
IF = 10 mA
10
5
IF = 5 mA
0
2
4
6
8
10
1.0
0.8
0.6
0.4
0.2
Normalized to:
VCE = 0.4 V, IF = 5 mA, Tamb = 25 °C
0
-55 -35 -15
0
12
5
25
45
65
85 105 125
Tamb - Ambient Temperature (°C)
VCE - Collector Emitter Voltage (V)
Fig. 8 - Collector Current vs. Collector Emitter Voltage (NS)
Fig. 11 - Normalized CTR (sat.) vs. Ambient Temperature
1.2
30
IF = 25 mA
NCTR - Normalized CTR (NS)
IC - Collector Current (mA)
IF = 0 A
25
20
15
IF = 10 mA
10
IF = 5 mA
5
IF = 1 mA
IF = 2 mA
0
0
0.1
0.2
0.3
0.4
0.5
VCE - Collector Emitter Voltage (V)
Fig. 9 - Collector Current vs. Collector Emitter Voltage
Rev. 1.0, 12-Feb-14
1.0
0.8
0.6
0.4
0.2
Normalized to:
VCE = 5 V, IF = 5 mA, Tamb = 25 °C
0
-55 -35 -15
5
25
45
65
85 105 125
Tamb - Ambient Temperature (°C)
Fig. 12 - Normalized CTR (NS) vs. Ambient Temperature
Document Number: 82566
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1.2
0.6
-20
Tamb = - 40 °C
Tamb = 25 °C
0.4
-40
-60
-80
-100
-120
Tamb = 110 °C
-140
0.2
-160
0.0
-180
0.1
1
10
100
IF - Forward Current (mA)
1
1.4
0.8
0.6
Tamb = - 40 °C
Tamb = 25 °C
0.4
Tamb = 110 °C
0.2
0.0
VCE = 5 V,
IF = 10 mA
1
10
10
ton
1
100
22517
IF - Forward Current (mA)
Fig. 14 - Normalized CTR (sat.) vs. Forward Current
toff
100
0.1
0.1
1000
Fig. 16 - Phase Angle vs. FCTR
ton, toff - Switching Time (μs)
Tamb = 0 °C
1.0
100
1000
Normalized to:
VCE = 5 V, IF = 5 mA, Tamb = 25 °C
1.2
10
Frequency (kHz)
22516
Fig. 13 - Normalized CTR (NS) vs. Forward Current
NCTR - Normalized CTR (sat)
VCE = 5 V
0
Tamb = 0 °C
1.0
0.8
20
Normalized to:
VCE = 5 V, IF = 5 mA, Tamb = 25 °C
Phase (deg)
NCTR - Normalized CTR (NS)
1.4
Vishay Semiconductors
0.1
1
10
100
RL - Load Resistance (kΩ)
Fig. 17 - Switching Time vs. Load Resistance
1000
FCTR (kHz)
VCE = 5 V
100
10
1
0.1
1
10
100
IC - Collector Current (mA)
22515
Fig. 15 - FCTR vs. Collector Current
Rev. 1.0, 12-Feb-14
Document Number: 82566
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SOLDERING GUIDLINES
Soldering Condition
Floor Life
The CNY651AxST are lead (Pb)-free devices. They are
suitable for reflow soldering. However due to large package
size, the peak package body temperature should not go
above 245 °C.
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 72 h
Conditions: Tamb < 30 °C, RH < 60 %
300
Moisture sensitivity level 4, according to J-STD-020.
Temperature (°C)
250
245 °C
240 °C
217 °C
Drying
In case of moisture absorption devices should be baked
before soldering according to the recommended conditions
shown below
200
max. 20 s
150
max. 100 s
max. 120 s
48 h at 125 °C ± 5 °C, RH < 5%
100
max. ramp down 6 °C/s
50
(Not suitable for tape and reel)
max. ramp up 3 °C/s
In case the floor time has not exceeded 10 days the units
can be baked in tape and reel according to the following
conditions
max. 2 cycles allowed
0
0
50
100
150
200
250
300
168 h at 60 °C ± 5 °C, RH < 5 %
Time (s)
22550
(Not suitable, if the floor time was exceeded by more than
10 days, or the allowed factory condition is exceeded)
Drypack
These devices have a moisture sensitivity level MSL4 thus
they are packed in moisture barrier bags (MBB) to prevent
moisture absorption during transportation and storage.
Each bag contains a desiccant bag.
CNY651 - DIP version device cannot go through reflow
soldering hence wave soldering should be used. See
absolute maximum ratings for soldering specifications.
PACKAGE DIMENSIONS in millimeters FOR CNY651A...ST
19.4 ± 0.3
17.8 ± 0.2
6.1 ± 0.2
9.6 ± 0.2
7.15 ± 0.4
0.4 ± 0.1
Z
0.5 ± 0.2
2.1 ± 0.5
7.62 ± 0.4
Leads coplanarity
0.1 max.
Anode
Cathode
Z 10:1
Collector
Recommended footprint
Emitter
20.9
2.9
technical drawings
according to DIN
specifications
7.62
14
Rev. 1.0, 12-Feb-14
Document Number: 82566
7
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CNY651 Series
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PACKAGE DIMENSIONS in millimeters FOR CNY651A...
9.6 ± 0.1
9.1 ± 0.3
6.1 ± 0.1
17.8 ± 0.1
7.62 ± 0.2
15.24 ± 0.2
Anode
Collector
Cathode
technical drawings
according to DIN
specifications
Emitter
PACKAGE MARKING (Example of CNY651AYST)
CNY651AYS
V YWWJ 69
Note
• The “T” at the end of the product designation is not marked on the package
TUBE AND TAPE INFORMATION
TUBE INFORMATION
TYPE
UNITS/TUBE
TUBES/BOX
UNITS/BOX
30
35
1050
CNY651
15914
Fig. 18 - CNY651
TAPE DIMENSIONS in millimeters FOR CNY651A...ST
Ø 1.55 ± 0.05
1.75 ± 0.1
2 ± 0.15
9.9
4 ± 0.1
8
0.4 ± 0.05
Top cover
tape
14.2 ± 0.10
18.1
25.5
32 ± 0.3
16 ± 0.1
Leader (start) min. 400 mm without devices
Trailer (end) min. 200 mm without devices
Rev. 1.0, 12-Feb-14
Ø 2 min.
5.65
Direction of feed
Document Number: 82566
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REEL DIMENSIONS in millimeters
Reel size "Y"
T: Ø 330 ± 2
Unreel direction
2±
Ø 60 min.
Tape position
coming out from reel
ØY
0.5
Ø 21 ± 0.8
32.4 + 2/0
38.4 max.
Ø 13 ± 0.2
Not indicated tolerances ± 0.1
Label posted here
Empty leader 400 mm min.
Parts mounted
100 mm min. with cover tape
Leader and trailer tape:
Empty trailer 200 mm min.
Direction of pulling out
Fig. 19 - 400 Units per Reel, 2 Reels per Box
Rev. 1.0, 12-Feb-14
Document Number: 82566
9
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Revision: 02-Oct-12
1
Document Number: 91000
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