CNY65Exi Datasheet

CNY65Exi
www.vishay.com
Vishay Semiconductors
Optocoupler, Phototransistor Output, ATEX Certified
FEATURES
Top view
A (±)
• ATEX certificate: PTB 03 ATEX 2033 U
www.vishay.com/doc?85361
C
• Suitable for intrinsic safe circuits for gas and
dust
• Gas safety provision: II (1) G (EX ia) IIC
• Dust safety provision: II (1) D (EX ia) IIIC
16965-1
C (±)
• Conforms to EN60079-0:2012
E
• Qualified for continuously, longterm, or frequently
dangerous explosive environments, zone 0
DESCRIPTION
• Isolation voltage (VISO) of 11 600 Vpeak for 1 minute
The CNY65Exi consists of a phototransistor optically
coupled to an infrared-emitting diode in a 4 pin plastic
package. The components are mounted opposite one
another, with a distance between input and output of
> 3.0 mm; meeting the highest of safety requirements.
• Distance from emitter to detector through insulation
≥ 3 mm
The CNY65Exi is ATEX certificated for explosive
atmospheres according to the European Guide line
94/9/EG.
AGENCY APPROVALS
• ATEX
• CTR from 50 % to 300 %
• Very low coupling capacity (CK)
- 0.3 pF superior noise immunity between input and
output pins
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
: PTB 03 ATEX 2033 U
EN 60079-0:2012
EN 60079-11:2012
EN 60079-26:2007
• Electronics used in potentially explosive gas and dust
environments
- Safety related process automation and instrumentation
- Natural gas metering and flow measurement
- Power and motor switching
- Power supplies, metering, and data acquisition
- Lighting and signaling
- Petrol and grain transport and storage
ORDERING INFORMATION
DIP-4
C
N
Y
PART NUMBER
6
5
X
CTR
BIN
AGENCY CERTIFIED/PACKAGE
E
x
i
PACKAGE OPTION
15.24 mm
CTR (%)
ATEX
50 to 300
100 to 200
DIP-4, HV, high isolation distance
CNY65Exi
CNY65BExi
Rev. 2.5, 10-Feb-15
Document Number: 83541
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CNY65Exi
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
5
V
Forward current
IF
75
mA
tp ≤ 10 μs
IFSM
1.5
A
Pdiss
120
mW
Tj
100
°C
Collector emitter voltage
VCEO
32
V
Emitter collector voltage
VECO
7
V
Forward surge current
Power dissipation
Junction temperature
OUTPUT
Collector current
Collector peak current
tp/T = 0.5, tp ≤ 10 ms
Power dissipation
Junction temperature
IC
50
mA
ICM
100
mA
Pdiss
130
mW
Tj
100
°C
COUPLER
VISO
11.6
kV
Total power dissipation
Ptot
250
mW
Ambient temperature range
Tamb
-55 to +85
°C
Storage temperature range
Tstg
-55 to +100
°C
Tsld
260
°C
DC isolation test voltage
Soldering temperature
t = 1 min
2 mm from case, t ≤ 10 s
Note
• Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 50 mA
VF
1.25
1.6
V
Collector emitter voltage
IC = 1 mA
VCEO
32
V
Emitter collector voltage
IE = 100 μA
VECO
7
V
VCE = 20 V, If = 0, E = 0
ICEO
t = 1 min
VISO (1)
VIO = 1 kV,
40 % relative humidity
RIO (1)
Collector saturation voltage
IF = 10 mA, IC = 1 mA
VCEsat
Cut-off frequency
VCE = 5 V, IF = 10 mA,
RL = 100 Ω
fc
f = 1 MHz
Ck
INPUT
Forward voltage
OUTPUT
Collector dark current
200
nA
COUPLER
DC isolation test voltage
Isolation resistance
Coupling capacitance
11.6
kV
Ω
1012
0.3
V
110
kHz
0.3
pF
Notes
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(1) Related to standard climate 23/50 DIN 50014.
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
IC/IF
Rev. 2.5, 10-Feb-15
TEST CONDITION
VCE = 5 V, IF = 10 mA
PART
SYMBOL
MIN.
TYP.
MAX.
CNY65Exi
CTR
50
100
300
UNIT
%
CNY65BExi
CTR
100
200
%
Document Number: 83541
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CNY65Exi
www.vishay.com
Vishay Semiconductors
SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Delay time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 1)
td
MIN.
TYP.
2.6
MAX.
UNIT
μs
Rise time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 1)
tr
2.4
μs
Fall time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 1)
tf
2.4
μs
Storage time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 1)
ts
0.3
μs
Turn-on time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 1)
ton
5
μs
Turn-off time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 1)
toff
3
μs
Turn-on time
VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 2)
ton
25
μs
Turn-off time
VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 2)
toff
42.5
μs
IF
IF
0
0
+5V
IF
IC = 5 mA; adjusted through
input amplitude
RG = 50
tp
= 0.01
T
tp = 50 µs
Channel I
Channel II
50
100
Oscilloscope
RL 1 M
CL 20 pF
Fig. 1 - Test Circuit, Non-Saturated Operation
IF
t
100 %
90 %
10 %
0
tr
td
ts
t on
tp
td
tr
t on (= td + tr)
95 10900
tp
IC
Pulse duration
Delay time
Rise time
Turn-on time
tf
t off
ts
tf
t off (= ts + tf)
t
Storage time
Fall time
Turn-off time
96 11698
Fig. 3 - Switching Times
+5V
I F = 10 mA
0
IC
R G = 50 Ω
tp
= 0.01
T
t p = 50 µs
Channel I
Channel II
50 Ω
Oscilloscope
R L ≥ 1 MΩ
C L ≤ 20 pF
1 kΩ
95 10843
Fig. 2 - Test Circuit, Saturated Operation
Rev. 2.5, 10-Feb-15
Document Number: 83541
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CNY65Exi
www.vishay.com
Vishay Semiconductors
Ptot - Total Power Dissipation (mW)
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
200
ICEO - Collector Dark Current,
with open Base (nA)
1000
160
120
Coupled device
80
Phototransistor
IR-diode
40
0
95 11003
25
50
75
10
100
Tamb - Ambient Temperature (°C)
0 10 20 30 40 50 60 70 80 90 100
96 12000
Fig. 4 - Total Power Dissipation vs. Ambient Temperature
Tamb - Ambient Temperature (°C)
Fig. 7 - Collector Dark Current vs. Ambient Temperature
100
IC - Collector Current (mA)
1000
IF - Forward Current (mA)
100
1
0
100
10
1
0
0.4
0.8
1.2
1.6
2.0
VF - Forward Voltage (V)
96 11862
1
100
10
IF - Forward Current (mA)
100
1.1
1.0
0.9
0.8
0.7
0.6
0.5
- 30 - 20 - 10 0 10 20 30 40 50 60 70 80
Tamb - Ambient Temperature (°C)
Fig. 6 - Relative Current Transfer Ratio vs.
Ambient Temperature
Rev. 2.5, 10-Feb-15
IC - Collector Current (mA)
VCE = 5 V
IF = 10 mA
1.2
96 11911
0.1
Fig. 8 - Collector Current vs. Forward Current
1.5
1.3
1
95 11012
Fig. 5 - Forward Current vs. Forward Voltage
1.4
VCE = 5 V
10
0.01
0.1
0.1
CTRrel - Relative Current Transfer Ratio
VCE = 20 V
IF = 0
IF = 50 mA
10 mA
10
5 mA
2 mA
1
1 mA
0.1
0.1
95 11013
1
10
100
VCE - Collector Emitter Voltage (V)
Fig. 9 - Collector Current vs. Collector Emitter Voltage
Document Number: 83541
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CNY65Exi
www.vishay.com
Vishay Semiconductors
ton/toff - Turn-on/Turn-off Time (µs)
1.0
VCEsat - Collector Emitter
Saturation Voltage (V)
0.9
0.8
0.7
CTR = 50 %
0.6
0.5
0.4
0.3
0.2
20 %
0.1
10 %
0.0
1
10
100
IC - Collector Current (mA)
96 11912
Non-saturated
operation
VS = 5 V
RL = 100 Ω
ton
15
toff
10
5
0
0
95 11016
Fig. 10 - Collector Emitter Saturation Voltage vs.
Collector Current
CTR - Current Transfer Ratio (%)
20
2
4
6
8
10
IC - Collector Current (mA)
Fig. 13 - Turn-on/Turn-off Time vs. Collector Current
1000
VCE = 5 V
100
10
1
0.1
1
100
10
IF - Forward Current (mA)
95 11015
ton/toff - Turn-on/Turn-off Time (µs)
Fig. 11 - Current Transfer Ratio vs. Forward Current
50
toff
40
30
ton
20
Saturated operation
VS = 5 V
RL = 1 kΩ
10
0
0
95 11017
5
10
15
20
IF - Forward Current (mA)
Fig. 12 - Turn-on/Turn-off Time vs. Forward Current
Rev. 2.5, 10-Feb-15
Document Number: 83541
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CNY65Exi
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
17.8 ± 0.1
9.1 ± 0.3
6.1 ± 0.1
9.6 ± 0.1
15.24 ± 0.2
7.62 ± 0.2
technical drawings
according to DIN
specifications
4
0.
5
0.
A
Cath
Coll
Weight: ca. 1.40 g
Creepage distance: > 14 mm
Air path: > 14 mm
after mounting on PC board
E
Drawing-No.: 6.544-5036.01-1
Issue: 2; 10.11.98
14763
CNY65BExi
V 818 J 69
II (1) G [Ex ia] IIC
II (1) D [Ex ia] IIIC
PTB 03 ATEX 2033 U
VISHAY
PACKAGE MARKING (example of CNY65BExi)
HANDLING AND STORAGE CONDITIONS
ESD level: HBM class 2
Rev. 2.5, 10-Feb-15
Document Number: 83541
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
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