TEPT5700 Datasheet

TEPT5700
www.vishay.com
Vishay Semiconductors
Ambient Light Sensor
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• High photo sensitivity
• Adapted to human eye responsivity
• Angle of half sensitivity: ϕ = ± 50°
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
20118
APPLICATIONS
DESCRIPTION
• Ambient light sensor for control of display backlight
dimming in LCD displays and keypad backlighting of
mobile devices and in industrial on/off-lighting operation
TEPT5700 ambient light sensor is a silicon NPN epitaxial
planar phototransistor in a T-1¾ package. It is sensitive to
visible light much like the human eye and has peak
sensitivity at 570 nm.
PRODUCT SUMMARY
COMPONENT
TEPT5700
IPCE (μA)
ϕ (deg)
λ0.5 (nm)
75
± 50
440 to 800
Note
• Test condition see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
TEPT5700
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk. Label with
IPCE group on each bulk. Specifications of
group A/B/C see table “Type Dedicated
Characteristics” on page 2
T-1¾
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Collector emitter voltage
VCEO
6
V
Emitter collector voltage
VECO
1.5
V
Collector current
Power dissipation
Tamb ≤ 55 °C
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.7, 25-Jun-14
IC
20
mA
PV
100
mW
Tj
100
°C
Tamb
-40 to +85
°C
Tstg
-40 to +100
°C
t ≤ 5 s, 2 mm distance to package
Tsd
260
°C
J-STD-051, soldered on PCB
RthJA
230
K/W
Document Number: 81321
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEPT5700
www.vishay.com
Vishay Semiconductors
PV - Power Dissipation (mW)
120
100
80
60
RthJA = 230 K/W
40
20
0
0
21333
10
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Collector emitter breakdown voltage
Collector dark current
Collector emitter capacitance
Collector light current
TEST CONDITION
SYMBOL
MIN.
IC = 0.1 mA
VCEO
6
VCE = 5 V, E = 0
ICEO
MAX.
UNIT
3
50
nA
24
μA
V
VCE = 0 V, f = 1 MHz, E = 0
CCEO
Ev = 20 lx, CIE illuminant A, VCE = 5 V
IPCE
Ev = 100 lx, CIE illuminant A, VCE = 5 V
IPCE
75
μA
ϕ
± 50
deg
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
TYP.
Ev = 20 lx, CIE illuminant A,
IPCE = 1.2 μA
16
5.2
pF
λp
570
nm
λ0.5
440 to 800
nm
VCEsat
0.1
V
TYPE DEDICATED CHARACTERISTICS
PARAMETER
TEST CONDITION
BINNED
GROUP
SYMBOL
MIN.
EV = 20 lx,
CIE illuminant A,
VCE = 5 V, Tamb = 25 °C
A
IPCE
5.2
9.9
μA
Photo current
B
IPCE
8.2
15.4
μA
C
IPCE
12.7
24
μA
MAX.
UNIT
Note
• Each 4000 piece bag will contain a single group. The label on the bag will indicate which binned group is in the bag. A specific group cannot
be ordered. Production shipments containing multiple bags will likely include multiple groups. Please design accordingly.
Rev. 1.7, 25-Jun-14
Document Number: 81321
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEPT5700
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
VCE = 5 V
10 -7
IPCE - Photo Current (µA)
ICEO - Collector Dark Current (A)
10 -6
10 -8
10 -9
10 -10
10 -11
VCE = 5 V
100
10
10 -12
10 -13
-40
19758
-20
0
20
40
60
80
Tamb - Ambient Temperature (°C)
1
10
100
20148
Fig. 2 - Collector Dark Current vs. Ambient Temperature
1.4
1.2
1.0
0.8
0.6
VCE = 5 V, white LED
-40
19759
-20
0
20 40 60 80
Tamb - Ambient Temperature (°C)
100
Fig. 3 - Relative Photo Current vs. Ambient Temperature
200 lx
120
100
80
100 lx
60
40
50 lx
20
0
25
f = 1 MHz
20
15
10
5
0
0.1
19762
1.0
10.0
VCE - Collector Emitter Voltage (V)
Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage
1.0
140
IPCE - Photo Current (µA)
CCE0 - Collector Emitter Capacitance (pF)
1.8
1.6
20 lx
0
20209
1
VCE
2
3
4
5
- Collector Emitter Voltage (V)
Fig. 4 - Photo Current vs. Collector Emitter Voltage
Rev. 1.7, 25-Jun-14
S(λ)rel - Relative Spectral Sensitivity
IPCE rel - Relative Photo Current
2.0
0
1000
Fig. 5 - Photo Current vs. Illuminance
2.2
0.4
0.2
100
E v - Illuminance (Ix)
20019
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
300 400 500 600 700 800 900 1000 1100
λ - Wavelength (nm)
Fig. 7 - Relative Spectral Sensitivity vs. Wavelength
Document Number: 81321
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEPT5700
www.vishay.com
0°
Vishay Semiconductors
10°
20°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
Srel - Relative Sensitivity
30°
80°
0.6
0.4
0.2
0
20160
Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
20117
Rev. 1.7, 25-Jun-14
Document Number: 81321
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000