BPW20RF Datasheet

BPW20RF
www.vishay.com
Vishay Semiconductors
Silicon Photodiode, RoHS Compliant
FEATURES
• Package type: leaded
• Package form: TO-5
• Dimensions (in mm): Ø 8.13
• Radiant sensitive area (in mm2): 7.5
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Angle of half sensitivity:  = ± 50°
94 8482
• Hermetically sealed package
• Cathode connected to package
• Flat glass window
DESCRIPTION
• UV enhanced
BPW20RF is a planar Silicon PN photodiode in a
hermetically sealed short TO-5 case, especially designed for
high precision linear applications.
• Low dark current
• High shunt resistance
• High linearity
Due to its extremely high dark resistance, the short circuit
photocurrent is linear over seven decades of illumination
level.
• Compliant to RoHS Directive 2002/95/EC and in
accordance with WEEE 2002/96/EC
On the other hand, there is a strictly logarithmic correlation
between open circuit voltage and illumination over the same
range.
APPLICATIONS
• Sensor for light measuring techniques in cameras,
photometers, color analyzers, exposure meters (e.g.
solariums) and other medical and industrial measuring
and control applications.
Equipped with a clear, flat glass window, the spectral
responsitivity reaches from blue to near infrared.
PRODUCT SUMMARY
COMPONENT
Ira (μA)
 (deg)
0.1 (nm)
60
± 50
400 to 1100
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 500 pcs, 500 pcs/bulk
TO-5
BPW20RF
Note
• Test condition see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
BPW20RF
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Power dissipation
Tamb  50 °C
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.7, 11-Aug-11
SYMBOL
VALUE
VR
10
UNIT
V
PV
300
mW
Tj
125
°C
Tamb
- 40 to + 125
°C
°C
Tstg
- 40 to + 125
t5s
Tsd
260
°C
Connected with Cu wire, 0.14 mm2
RthJA
250
K/W
1
Document Number: 81570
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPW20RF
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
IF = 50 mA
VF
IR = 20 μA, E = 0
V(BR)
VR = 5 V, E = 0
Iro
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
MIN.
TYP.
MAX.
UNIT
1.0
1.3
V
2
30
nA
10
V
VR = 0 V, f = 1 MHz, E = 0
CD
1.2
nF
VR = 5 V, f = 1 MHz, E = 0
CD
400
pF
38
G
Dark resistance
VR = 10 mV
RD
Open circuit voltage
EA = 1 klx
Vo
Temperature coefficient of Vo
EA = 1 klx
TKVo
Short circuit current
EA = 1 klx
Ik
Temperature coefficient of Ik
330
20
500
mV
-2
mV/K
60
μA
0.1
%/K
60
μA
EA = 1 klx
TKIk
EA = 1 klx, VR = 5 V
Ira
Ee = 1 mW/cm2,  = 950 nm,
VR = 5 V
Ira
42
μA
Angle of half sensitivity

± 50
deg
Wavelength of peak sensitivity
p
920
Reverse light current
20
0.1
Range of spectral bandwidth
nm
400
1100
nm
Rise time
VR = 0 V, RL = 1 k,  = 820 nm
tr
3.4
μs
Fall time
VR = 0 V, RL = 1 k,  = 820 nm
tf
3.7
μs
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
I ra rel - Relative Reverse Light Current
I ro - Reverse Dark Current (nA)
10 4
10 3
10 2
VR = 5 V
10 1
10
1.3
1.2
VR = 5 V
λ = 950 nm
1.1
1.0
0.9
0.8
20
94 8468
40
60
80
100
0
120
Tamb - Ambient Temperature (°C)
94 8469
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Rev. 1.7, 11-Aug-11
20
40
60
80
100
120
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
2
Document Number: 81570
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPW20RF
www.vishay.com
1400
10 2
1200
C D - Diode Capacitance (pF)
3
10
Ik - Short Circuit Current (µA)
Vishay Semiconductors
10 1
10 0
10 -1
10 -2
10 -3
10 -4
10 -2 10 -1
800
600
400
200
0
10 0
10 1 10 2
10 3 10 4 10
5
0.1
E A - Illuminance (lx)
18959
E=0
f = 1 MHz
1000
Fig. 3 - Short Circuit Current vs. Illuminance
1
10
100
V R - Reverse Voltage (V)
94 8473
Fig. 6 - Diode Capacitance vs. Reverse Voltage
S (λ)rel - Relative Spectral Sensitivity
10
VR = 5 V
λ = 950 nm
1
0.1
0.01
0.1
1
0.8
0.6
0.4
0.2
0
350
10
E e - Irradiance (mW/cm2)
94 8471
1.0
550
Fig. 4 - Reverse Light Current vs. Irradiance
750
1150
Fig. 7 - Relative Spectral Sensitivity vs. Wavelength
0°
100
10°
20°
30°
1
mW/cm 2
Srel - Relative Sensitivity
Ira - Reverse Light Current (µA)
950
λ - Wavelength (nm)
94 8474
0.5 mW/cm2
0.2 mW/cm2
10
0.1
mW/cm2
0.05 mW/cm 2
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
λ = 950 nm
1
0.1
94 8472
1
10
100
0.6
V R - Reverse Voltage (V)
0.4
0.2
0
94 8475
Fig. 5 - Reverse Light Current vs. Reverse Voltage
Rev. 1.7, 11-Aug-11
ϕ - Angular Displacement
Ira - Reverse Light Current (µA)
100
Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement
3
Document Number: 81570
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPW20RF
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
9.1 ± 0.1
-
+
5.08 nom.
± 0.2
Ø 8.13
± 0.1
3.1
Ø 5.9 ± 0.1
14
-1
(1.65)
Chip position
technical drawings
according to DIN
specifications
Ø 0.45
+ 0.02
- 0.05
Drawing-No.: 6.511-5002.01-4
Issue:1; 01.07.96
96 12181
Rev. 1.7, 11-Aug-11
4
Document Number: 81570
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000
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