BPW46 Datasheet

BPW46
www.vishay.com
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: leaded
• Package form: side view
• Dimensions (L x W x H in mm): 5 x 3 x 6.4
• Radiant sensitive area (in mm2): 7.5
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
94 8632
• Angle of half sensitivity:  = ± 65°
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
BPW46 is a PIN photodiode with high speed and high
radiant sensitivity in a clear, side view plastic package. It is
sensitive to visible and near infrared radiation.
APPLICATIONS
• High speed photo detector
PRODUCT SUMMARY
COMPONENT
Ira (μA)
 (deg)
0.1 (nm)
50
± 65
430 to 1100
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
Side view
BPW46
Note
• Test condition see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
BPW46
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Power dissipation
Tamb  25 °C
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.8, 03-Jun-14
t5s
Connected with Cu wire, 0.14
mm2
SYMBOL
VALUE
VR
60
UNIT
V
PV
215
mW
Tj
100
°C
Tamb
-40 to +100
°C
Tstg
-40 to +100
°C
Tsd
260
°C
RthJA
350
K/W
Document Number: 81524
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPW46
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Breakdown voltage
IR = 100 μA, E = 0
V(BR)
60
TYP.
MAX.
UNIT
V
VR = 10 V, E = 0
Iro
2
VR = 0 V, f = 1 MHz, E = 0
CD
70
VR = 3 V, f = 1 MHz, E = 0
CD
25
Open circuit voltage
Ee = 1 mW/cm2,  = 950 nm
Vo
350
mV
Temperature coefficient of Vo
Ee = 1 mW/cm2,  = 950 nm
TKVo
-2.6
mV/K
Short circuit current
EA = 1 klx
Ik
70
μA
Ee = 1 mW/cm2,  = 950 nm
Ik
47
μA
Temperature coefficient of Ik
Ee = 1 mW/cm2,  = 950 nm
TKIk
0.1
%/K
EA = 1 klx, VR = 5 V
Ira
75
μA
Reverse light current
Ee = 1 mW/cm2,  = 950 nm,
VR = 5 V
Ira
50
μA
Reverse dark current
Diode capacitance
40
30
nA
pF
40
pF
Angle of half sensitivity

± 65
deg
Wavelength of peak sensitivity
p
900
nm
0.1
430 to 1100
nm
VR = 10 V,  = 950 nm
NEP
4 x 10-14
W/Hz
Rise time
VR = 10 V, RL = 1 k,  = 820 nm
tr
100
ns
Fall time
VR = 10 V, RL = 1 k,  = 820 nm
tf
100
ns
Range of spectral bandwidth
Noise equivalent power
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Ira, rel - Relative Reverse Light Current
Iro - Reverse Dark Current (nA)
1000
100
10
VR = 10 V
1
20
94 8403
40
60
80
Tamb - Ambient Temperature (°C)
VR = 5 V
λ = 950 nm
1.2
1.0
0.8
0.6
0
100
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Rev. 1.8, 03-Jun-14
1.4
94 8416
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Document Number: 81524
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPW46
www.vishay.com
Vishay Semiconductors
80
CD - Diode Capacitance (pF)
Ira - Reverse Light Current (µA)
1000
100
10
VR = 5 V
λ = 950 nm
1
0.1
0.01
0.1
1
40
20
0
0.1
10
Ee - Irradiance (mW/cm2)
94 8417
E=0
f = 1 MHz
60
Fig. 3 - Reverse Light Current vs. Irradiance
1
10
100
VR - Reverse Voltage (V)
948407
Fig. 6 - Diode Capacitance vs. Reverse Voltage
S(λ)rel - Relative Spectral Sensitivity
100
10
VR = 5 V
1
0.1
101
0.8
0.6
0.4
0.2
0
102
103
104
EA - Illuminance (lx)
94 8418
1.0
350
550
Fig. 4 - Reverse Light Current vs. Illuminance
750
Fig. 7 - Relative Spectral Sensitivity vs. Wavelength
0°
100
10°
20°
30°
1 mW/cm2
Srel - Relative Radiant Sensitivity
Ira - Reverse Light Current (µA)
1150
950
λ - Wavelength (nm)
94 8420
0.5 mW/cm2
0.2 mW/cm2
10
0.1 mW/cm2
0.05 mW/cm2
λ = 950 nm
1
0.1
94 8419
1
10
0.9
50°
0.8
60°
VR - Reverse Voltage (V)
70°
0.7
100
Fig. 5 - Reverse Light Current vs. Reverse Voltage
Rev. 1.8, 03-Jun-14
40°
1.0
ϕ - Angular Displacement
Ira - Reverse Light Current (µA)
1000
80°
0.6
0.4
0.2
0
94 8406
Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement
Document Number: 81524
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPW46
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
C
technical drawings
according to DIN
specifications
3 - 0.2
A
- 0.2
(0.7)
7.2
± 0.2
(3.2)
Sensitive area
20.2
< 0.7
- 0.8
9.3
± 0.2
6.4
± 0.3
5
< 0.65
Area not plane
1.5
0.45
± 0.05
2.54 nom.
0.95 ± 0.2
0.4
± 0.05
Drawing-No.: 6.544-5109.01-4
Issue:1; 01.07.96
96 12196
Rev. 1.8, 03-Jun-14
Document Number: 81524
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000
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