BPW21R Datasheet

BPW21R
www.vishay.com
Vishay Semiconductors
Silicon Photodiode
FEATURES
• Package type: leaded
• Package form: TO-5
• Dimensions (in mm): Ø 8.13
• Radiant sensitive area (in mm2): 7.5
• High photo sensitivity
• Adapted to human eye responsivity
• Angle of half sensitivity: ϕ = ± 50°
94 8394
• Hermetically sealed package
• Cathode connected to package
DESCRIPTION
• Flat glass window
BPW21R is a planar Silicon PN photodiode in a hermetically
sealed short TO-5 case, especially designed for high
precision linear applications.
• Low dark current
Due to its extremely high dark resistance, the short circuit
photocurrent is linear over seven decades of illumination
level.
• Compliant to RoHS Directive 2002/95/EC and in
accordance with WEEE 2002/96/EC
On the other hand, there is a strictly logarithmic correlation
between open circuit voltage and illumination over the same
range.
APPLICATIONS
• High shunt resistance
• High linearity
• Sensor in exposure and color measuring purposes
The device is equipped with a flat glass window with built in
color correction filter, giving an approximation to the
spectral response of the human eye.
PRODUCT SUMMARY
COMPONENT
Ira (μA)
ϕ (deg)
λ0.5 (nm)
9
± 50
420 to 675
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 500 pcs, 500 pcs/bulk
TO-5
BPW21R
Note
• Test condition see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
BPW21R
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Power dissipation
Tamb ≤ 50 °C
Junction temperature
SYMBOL
VALUE
VR
10
UNIT
V
PV
300
mW
Tj
125
°C
Operating temperature range
Tamb
- 40 to + 125
°C
Storage temperature range
Tstg
- 40 to + 125
°C
t≤5s
Tsd
260
°C
Connected with Cu wire, 0.14 mm2
RthJA
250
K/W
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.7, 23-Nov-11
Document Number: 81519
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPW21R
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
IF = 50 mA
VF
IR = 20 μA, E = 0
V(BR)
VR = 5 V, E = 0
Iro
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
TYP.
MAX.
UNIT
1.0
1.3
V
2
30
nA
10
V
VR = 0 V, f = 1 MHz, E = 0
CD
1.2
nF
VR = 5 V, f = 1 MHz, E = 0
CD
400
pF
38
GΩ
Dark resistance
VR = 10 mV
RD
Open circuit voltage
EA = 1 klx
Vo
Temperature coefficient of Vo
EA = 1 klx
TKVo
Short circuit current
EA = 1 klx
Ik
Temperature coefficient of IK
280
4.5
EA = 1 klx
TKIk
EA = 1 klx, VR = 5 V
Ira
VR = 5 V, EA = 10-2 to 105 lx
Reverse light current
Sensitivity
MIN.
4.5
450
mV
-2
mV/K
9
μA
- 0.05
%/K
9
μA
S
9
nA/Ix
Angle of half sensitivity
ϕ
± 50
deg
Wavelength of peak sensitivity
λp
565
nm
Range of spectral bandwidth
λ0.5
420 to 675
nm
Rise time
VR = 0 V, RL = 1 kΩ, λ = 660 nm
tr
3.1
μs
Fall time
VR = 0 V, RL = 1 kΩ, λ = 660 nm
tf
3.0
μs
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1.3
10 3
10 2
VR = 5 V
10 1
10
20
94 8468
40
60
80
100
1.2
1.1
1.0
0.9
0.8
120
Tamb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Rev. 1.7, 23-Nov-11
Ira rel - RelativeReverse Light Current
I ro - Reverse Dark Current (nA)
10 4
0
94 8738
20
40
60
80
100
120
Tamb - Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Document Number: 81519
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPW21R
www.vishay.com
0°
3
10°
20°
10 1
10 0
10 -1
10 -2
40°
1.0
0.9
50°
0.8
60°
70°
0.7
10 -3
ϕ - Angular Displacement
30°
10 2
Srel - Relative Sensitivity
IK - Short Circuit Current (µA)
10
Vishay Semiconductors
80°
10 -4
10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 10 5 10 6
EA - Illuminance (lx)
94 8476
0.6
0.4
0.2
0
94 8475
Fig. 3 - Short Circuit Current vs. Illuminance
Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement
C D - Diode Capacitance (pF)
1400
1200
E=0
f = 1 MHz
1000
800
600
400
200
0
0.1
1
10
100
V R - Reverse Voltage (V)
94 8473
S (λ)rel - Relative Spectral Sensitivity
Fig. 4 - Diode Capacitance vs. Reverse Voltage
1.0
0.8
0.6
0.4
0.2
0
350
94 8477
V λ Eye
450
550
650
750
λ - Wavelength (nm)
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
Rev. 1.7, 23-Nov-11
Document Number: 81519
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPW21R
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
9.1 ± 0.1
+
5.08 nom.
± 0.1
Ø 5.9 ± 0.1
3.1
± 0.2
Ø 8.13
14
-1
(1.65)
Chip position
technical drawings
according to DIN
specifications
Ø 0.45
+ 0.02
- 0.05
Drawing-No.: 6.511-5002.01-4
Issue:1; 01.07.96
96 12181
Rev. 1.7, 23-Nov-11
Document Number: 81519
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000
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