elm34408aa

Single N-channel MOSFET
ELM34408AA-N
■General description
■Features
ELM34408AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=30V
Id=8A
Rds(on) < 18mΩ (Vgs=10V)
Rds(on) < 30mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
30
V
±20
V
Symbol
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
8
6
32
Id
Idm
Tc=25°C
Power dissipation
Tc=70°C
Junction and storage temperature range
Pd
Tj, Tstg
A
A
2.5
3
W
1.6
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Steady-state
Rθja
■Pin configuration
Max.
Unit
50
°C/W
Note
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
Typ.
5
Pin No.
1
Pin name
SOURCE
2
3
4
SOURCE
SOURCE
GATE
5
6
7
DRAIN
DRAIN
DRAIN
8
DRAIN
4-1
D
G
S
Single N-channel MOSFET
ELM34408AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=20V, Vgs=0V, Ta=55°C
10
Vds=0V, Vgs=±20V
Static drain-source on-resistance
Rds(on)
Pulsed body-diode current
DYNAMIC PARAMETERS
Input capacitance
V
1
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=10V, Vds=5V
Max. body-diode continuous current
30
Vds=24V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
1.0
8
1.5
μA
±100
nA
2.5
V
A
Vgs=10V, Id=8A
15
18
mΩ
Vgs=4.5V, Id=7A
22
30
mΩ
Vds=15V, Id=8A
If=1A, Vgs=0V
16
1.1
S
V
Is
2.3
A
Ism
4.6
A
Gfs
Vsd
Ciss
1200
pF
Coss Vgs=0V, Vds=15V, f=1MHz
Crss
220
100
pF
pF
Gate-source charge
Qg
Qgs
15.0
5.8
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Turn-off fall time
Body diode reverse recovery time
Vgs=4.5V, Vds=15V, Id=2A
3.8
Vgs=10V, Vds=15V, Id=1A
td(off) Rgen=0.2Ω
tf
trr
20.0
If=2.3A, dIf/dt=100A/μs
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%;
2. Independent of operating temperature;
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4-2
1
1
1
1
3
nC
nC
2
2
2
2
11
17
18
nC
ns
26
ns
2
37
54
ns
2
20
50
30
80
ns
ns
2
NIKO-SEM
Single N-channel
MOSFET
N-Channel
Enhancement
Mode Field
ELM34408AA-N
Effect Transistor
■Typical electrical and thermal characteristics
4-3
P1803BVG
SOP-8
Lead Free
N-Channel
Enhancement
Mode Field
Single N-channel
MOSFET
Effect
Transistor
ELM34408AA-N
NIKO-SEM
SOP-8
Lead Free
MAXIMUM SAFE OPERATING AREA
2
10
I D,DRAIN CURRENT( A )
P1803BVG
R
1
10
100
µS
it
Lim
n)
ds(o
10m
s
1ms
100
ms
0
10
10s
DC
VGS= 10V
SINGLE PULSE
R」cJA= 125 °C/W
TA = 25 °C
-1
10
-2
10
1s
-1
10
0
1
10
10
VDS,DRAIN - SOURCE VOLTAGE
2
10
4-4
4
Mar-21-2005
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