ELM-TECH ELM34814AA-N

Dual N-channel MOSFET
ELM34814AA-N
■General description
■Features
ELM34814AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=30V
Id=7A
Rds(on) < 23mΩ (Vgs=10V)
Rds(on) < 30mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
Symbol
Vds
Limit
±30
Unit
V
Vgs
±20
V
Id
7
6
A
Idm
Ta=25°C
Power dissipation
Pd
Ta=70°C
Junction and storage temperature range
Tj, Tstg
40
2.0
A
Note
3
W
1.3
-55 to 150
°C
■Thermal characteristics
Parameter
Symbol
Maximum junction-to-ambient
Steady-state
Typ.
Rθja
■Pin configuration
Max.
Unit
62.5
°C/W
Note
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
2
3
Pin name
SOURCE1
GATE1
SOURCE2
4
5
6
GATE2
DRAIN2
DRAIN2
7
8
DRAIN1
DRAIN1
4- 1
D2
D1
G2
G1
S1
S2
Dual N-channel MOSFET
ELM34814AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=24V, Vgs=0V
Vds=20V, Vgs=0V, Tj=55°C
Gate-body leakage current
Igss
Vds=0V, Vgs=±20V
Gate threshold voltage
On state drain current
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=10V, Vds=5V
Static drain-source on-resistance
Rds(on)
30
1.0
25
V
1.5
1
10
μA
±100
nA
3.0
V
A
Vgs=10V, Id=7A
15
23
mΩ
21
16
30
mΩ
S
Forward transconductance
Gfs
Vgs=4.5V, Id=6A
Vds=15V, Id=5A
Diode forward voltage
Vsd
If=1A, Vgs=0V
Max.body-diode continuous current
Pulsed current
Is
Ism
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Ciss
Coss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Min.
Ta=25°C
Typ. Max. Unit Note
1
1
1
V
1
3
6
A
A
3
830
185
pF
pF
Crss
80
pF
Qg
9.0
Vgs=0V, Vds=15V, f=1MHz
1
13.0
nC
2
Gate-source charge
Gate-drain charge
Turn-on delay time
Qgs Vgs=5V, Vds=15V, Id=7A
Qgd
td(on)
2.8
3.1
5.7
nC
nC
ns
2
2
2
Turn-on rise time
Turn-off delay time
tr
Vgs=10V, Vds=15V, Id≈1A
td(off) Rgen=6Ω
10.0
18.0
ns
ns
2
2
5.0
15.5
7.9
ns
ns
nC
2
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
tf
trr
Qrr
If=5A, dl/dt=100A/μs
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4- 2
NIKO-SEM
Dual N-Channel Enhancement Mode
Dual N-channel MOSFET
Field Effect Transistor
ELM34814AA-N
P07D03LVG
SOP-8
Lead-Free
■Typical electrical and thermal characteristics
4 - 33
Apr-27-2005
NIKO-SEM
Dual N-channel MOSFET
Dual N-Channel Enhancement Mode
FieldELM34814AA-N
Effect Transistor
P07D03LVG
SOP-8
Lead-Free
4- 4
4
Apr-27-2005