elm5e400pa

Single N-channel MOSFET
ELM5E400PA-S
■General description
■Features
ELM5E400PA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
•
■Maximum absolute ratings
Parameter
Drain-source voltage
Symbol
Vds
Gate-source voltage
Vgs
Ta=25°C
Ta=70°C
Continuous drain current Tj=150°C
Id
Pulsed drain current
Idm
Tc=25°C
Tc=70°C
Power dissipation
Pd
Junction and storage temperature range
Tj, Tstg
■Pin configuration
Vds=20V
Id=0.7A
Rds(on) = 360mΩ (Vgs=4.5V)
Rds(on) = 420mΩ (Vgs=2.5V)
Rds(on) = 560mΩ (Vgs=1.8V)
Ta=25°C. Unless otherwise noted.
Limit
Unit
20
V
±12
0.7
0.4
V
1.0
0.27
0.16
A
A
W
-55 to 150
°C
■Circuit
D
SOT-523(TOP VIEW)
3
1
2
Pin No.
1
Pin name
GATE
2
3
SOURCE
DRAIN
G
S
5- 1
Single N-channel MOSFET
ELM5E400PA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=20V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±12V
Gate threshold voltage
On state drain current
Static drain-source on-resistance
1
Ta=85°C
5
0.4
0.7
μA
±100
nA
1.0
V
A
240
360
Rds(on) Vgs=2.5V, Id=0.5A
300
420
420
1
560
0.65
1.20
V
0.3
A
Gfs
Diode forward voltage
Vsd
Is=0.15A, Vgs=0V
Is
Ciss
Coss
Crss
Gate-source charge
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Turn-off fall time
V
Vgs=4.5V, Id=0.6A
Forward transconductance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
20
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
Vgs=1.8V, Id=0.4A
Vds=10V, Id=0.4A
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Vgs=0V, Vds=10V, f=1MHz
Vgs=4.5V, Vds=10V, Id=0.6A
mΩ
S
70
pF
20
8
pF
pF
1.06
0.18
1.38
nC
nC
0.32
18
26
nC
ns
Vgs=4.5V, Vds=10V
20
28
ns
td(off) RL=20Ω, Id=0.5A, Rgen=1Ω
70
110
ns
25
40
ns
tf
5- 2
AFN1012
Alfa-MOS
20V N-Channel
Technology
Enhancement Mode MOSFET
Single N-channel MOSFET
ELM5E400PA-S
■Typical
electrical and thermal characteristics
Typical
Characteristics
©Alfa-MOS Technology Corp.
Rev.A Oct. 2010
www.alfa-mos.com
Page 3
5- 3
AFN1012
Alfa-MOS
20V N-Channel
Technology
Enhancement Mode MOSFET
Single N-channel MOSFET
ELM5E400PA-S
Typical Characteristics
©Alfa-MOS Technology Corp.
Rev.A Oct. 2010
www.alfa-mos.com
Page 4
5- 4
AFN1012
Alfa-MOS
20V N-Channel
Technology
Enhancement Mode MOSFET
Single N-channel MOSFET
ELM5E400PA-S
Typical■Test
Characteristics
circuit and waveform
©Alfa-MOS Technology Corp.
Rev.A Oct. 2010
www.alfa-mos.com
5- 5
Page 5
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