elm13415ca

Single P-channel MOSFET
ELM13415CA-S
■General description
■Features
ELM13415CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance. Internal ESD protection is included.
•
•
•
•
•
•
Vds=-20V
Id=-4A (Vgs=-4.5V)
Rds(on) < 43mΩ (Vgs=-4.5V)
Rds(on) < 54mΩ (Vgs=-2.5V)
Rds(on) < 73mΩ (Vgs=-1.8V)
ESD protected
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Gate-source voltage
Vds
Vgs
Ta=25°C
Continuous drain current
-20
±8
-4.0
Id
Ta=70°C
Pulsed drain current
Tc=25°C
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
A
-3.5
-30
1.5
Idm
Power dissipation
V
V
1.0
-55 to 150
A
3
W
2
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
Symbol
t≤10s
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
65
85
43
Max.
80
100
52
1
2
Note
1
1, 4
■Circuit
SOT-23(TOP VIEW)
3
Unit
°C/W
°C/W
°C/W
D
Pin No.
1
Pin name
GATE
2
3
SOURCE
DRAIN
G
S
5-1
Single P-channel MOSFET
ELM13415CA-S
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=-20V
Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±8V
Gate threshold voltage
On state drain current
Rds(on) Vgs=-2.5V, Id=-4A
52
45
62
54
Vgs=-1.8V, Id=-2A
Vgs=-1.5V, Id=-1A
Vds=-5V, Id=-4A
54
65
20
73
-0.64
-1.00
-2
V
A
620
80
50
780
115
80
940
150
110
pF
pF
pF
7.4
1.2
9.3
1.5
11.0
1.8
nC
nC
1.0
1.8
120
2.5
nC
ns
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Ciss
Coss
Crss
Body diode reverse recovery time
Body diode reverse recovery charge
μA
43
Vsd
Is
Qg
Qgs
Qgd
td(on)
-0.30
-30
μA
37
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Turn-off delay time
Turn-off fall time
-5
±10
-0.90
Gfs
Gate-drain charge
Turn-on delay time
Turn-on rise time
Ta=55°C
-0.57
Forward transconductance
Gate-source charge
V
-1
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-4.5V, Vds=-5V
Vgs=-4.5V
Id=-4A
Static drain-source on-resistance
-20
Ta=125°C
Is=-1A, Vgs=0V
Vgs=0V, Vds=-10V, f=1MHz
Vgs=-4.5V, Vds=-10V
Id=-4A
tr
Vgs=-4.5V, Vds=-10V
td(off) RL=2.5Ω, Rgen=3Ω
tf
trr
Qrr
If=-4A, dIf/dt=500A/μs
If=-4A, dIf/dt=500A/μs
14
30
mΩ
S
240
2.8
2.0
11
24
V
A
ns
ns
ns
17
36
ns
nC
NOTE :
1. The value of Rθja is measured with the device mounted on 1in2 FR-4 board of 2oz. Copper, in still air environment
with Ta =25°C. The value in any given application depends on the user's specific board design.
2. The power dissipation Pd is based on Tj(Max)=150°C, using 10s junction-to-ambient thermal resistance.
3. Repetitive rating, pulse width limited by junction temperature Tj(Max)=150°C. Ratings are based on low frequency
and duty cycles to keep initial Tj=25°C.
4. The Rθja is the sum of the thermal impedence from junction to lead Rθjl and lead to ambient.
5. The static characteristics in Figures 1 to 6 are obtained using <300μs pulses, duty cycle 0.5% max.
6. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted
on 1in2 FR-4 board with 2oz.Copper, assuming a maximum junction temperature of Tj(Max)=150°C. The SOA
curve provides a single pulse rating.
5-2
Single P-channel MOSFET
AO3415
ELM13415CA-S
■Typical electrical and thermal characteristics
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
-8V
35
15
-4.5V
-3.0V
VDS=-5V
12
30
-2.5V
9
-ID(A)
-ID (A)
25
20
-2.0V
15
10
6
3
5
125�C
0
0
0
1
2
3
4
0
5
0.5
100
Normalized On-Resistance
1.60
VGS=-1.5V
80
60
VGS=-1.8V
VGS=-2.5V
40
1
1.5
2
-VGS(Volts)
Figure 2: Transfer Characteristics (Note 5)
-VDS (Volts)
)
Fig 1: On-Region Characteristics (Note 5)
RDS(ON) (mΩ
Ω)
25�C
VGS=-1.5V
VGS=-4.5V
ID=-4A, VGS=-4.5V
1.40
ID=-4A, VGS=-2.5V
17
5
ID =-2A, VGS =-1.8V
2
10
1.20
1.00
0.80
20
0
2
0
4
6
8
10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
)
Voltage (Note 5)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
)
(Note 5)
1.0E+01
120
ID=-4A
1.0E+00
40
1.0E-01
80
125�
60
-IS (A)
RDS(ON) (mΩ
Ω)
100
25�
125�
1.0E-02
1.0E-03
40
1.0E-04
25�
20
0
1.0E-05
0.0
2
4
6
8
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note 5)
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note 5)
5-3
1.2
Single P-channel MOSFET
AO3415
ELM13415CA-S
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
1400
VDS=-10V
ID=-4A
1200
Capacitance (pF)
-VGS (Volts)
4
3
2
1
800
600
200
Crss
0
0
2
4
6
8
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
12
0
5
10
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
20
1000
100.0
TJ(Max)=150�C
TA=25�C
10µs
RDS(ON)
limited
100µs
Power (W)
10.0
-ID (Amps)
Coss
400
0
1ms
1.0
10ms
0.1
TJ(Max)=150�C
TA=25�C
100ms
10s
DC
0.01
0.1
1
-VDS (Volts)
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
10
10
0.00001
100
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to)
Ambient (Note 6)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 6)
10
100
1
0.0
Zθ JA Normalized Transient
Thermal Resistance
Ciss
1000
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=100�C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note 6)
5-4
100
1000
Single P-channel MOSFET
ELM13415CA-S
AO3415
■Test circuit & waveform
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
+
VDC
-
Qgd
Qgs
Vds
+
VDC
DUT
Vgs
Ig
Charge
R esistive S w itching Test C ircuit & W aveform s
RL
V ds
Vgs
V DC
td(o n)
t d(o ff)
tr
tf
90%
V dd
+
DUT
Vgs
-
Rg
t o ff
to n
V gs
10%
V ds
D iode R e covery T e st C ircuit & W aveform s
Q rr = -
V ds +
Vds -
DUT
Isd
V gs
Ig
Idt
V gs
L
-Isd
+ V dd
VDC
-
-I F
t rr
dI/dt
-I R M
-Vds
5-5
V dd
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