AO6409A 20V P-Channel MOSFET General Description The AO6409A uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications. Features VDS -20V ID (at VGS=-4.5V) -5.5A RDS(ON) (at VGS= -4.5V) < 41mΩ RDS(ON) (at VGS= -2.5V) < 53mΩ RDS(ON) (at VGS= -1.8V) < 65mΩ ESD protected D Top View D 1 6 D D 2 5 D G 3 4 S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 1/5 Steady-State Steady-State A 2.1 W 1.3 TJ, TSTG Symbol t ≤ 10s V -30 PD TA=70°C ±8 -4 IDM TA=25°C Units V -5.5 ID TA=70°C Maximum -20 RθJA RθJL -55 to 150 Typ 48 75 37 °C Max 60 90 45 Units °C/W °C/W °C/W www.freescale.net.cn AO6409A 20V P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -20 -1 TJ=55°C -5 ±10 µA V 34 41 49 59 VGS=-2.5V, ID=-4A 42 53 mΩ VGS=-1.8V, ID=-2A 52 65 mΩ 20 -1 V -2 A 905 pF VDS=VGS, ID=-250µΑ -0.3 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -30 VGS=-4.5V, ID=-5.5A TJ=125°C gFS Forward Transconductance VDS=-5V, ID=-5.5A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge µA -0.9 VDS=0V, VGS= ±8V Gate Threshold Voltage Crss Units -0.57 Gate-Body leakage current VGS(th) Static Drain-Source On-Resistance Max V VDS=-20V, VGS=0V IGSS RDS(ON) Typ VGS=-4.5V, VDS=-10V, ID=-5.5A A -0.64 mΩ S 600 751 80 115 150 pF 48 80 115 pF 6 13 20 Ω 7.4 9.3 11 nC 0.8 1 1.2 nC 1.3 2.2 3.1 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-5.5A, dI/dt=500A/µs 20 26 32 Qrr Body Diode Reverse Recovery Charge IF=-5.5A, dI/dt=500A/µs 40 51 62 VGS=-4.5V, VDS=-10V, RL=1.8Ω, RGEN=3Ω 13 ns 9 ns 19 ns 29 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 2/5 www.freescale.net.cn AO6409A 20V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 15 -8V -4.5V VDS=-5V 35 -3.0V 12 30 -2.5V 9 -ID(A) -ID (A) 25 20 -2.0V 15 10 3 5 125°C 25°C VGS=-1.5V 0 0 0 1 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 0 5 80 0.5 1 1.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 2 Normalized On-Resistance 1.60 70 VGS=-1.8V RDS(ON) (mΩ Ω) 6 60 50 VGS=-2.5V 40 VGS=-4.5V 30 ID=-5.5A, VGS=-4.5V 1.40 ID=-5A, VGS=-2.5V 1.20 ID=-4A, VGS=-1.8V 1.00 0.80 20 0 2 4 6 8 0 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+01 120 ID=-5.5A 1.0E+00 100 -IS (A) RDS(ON) (mΩ Ω) 1.0E-01 80 60 125°C 40 25°C 1.0E-03 1.0E-04 25°C 20 0 3/5 125°C 1.0E-02 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO6409A 20V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 5 VDS=-10V ID=-5.5A 1200 Capacitance (pF) -VGS (Volts) 4 3 2 1000 Ciss 800 600 400 Coss 1 200 Crss 0 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 0 12 100.0 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics 1000 TJ(Max)=150°C TA=25°C 10.0 RDS(ON) limited 100µs 1ms 1.0 10ms DC 0.1 Power (W) 10µs -ID (Amps) 20 100 10 100ms TJ(Max)=150°C TA=25°C 10s 1 0.0 0.01 0.1 1 -VDS (Volts) 10 0.00001 100 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/5 www.freescale.net.cn AO6409A 20V P-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge R esistive Sw itching Test C ircuit & W aveform s RL V ds t o ff to n Vgs - DUT Vgs V DC td(o n) t d(o ff) tr tf 90% V dd + Rg V gs 10% V ds D iode R e covery Te st C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs Vds Isd V gs Ig 5/5 L -Isd + V dd t rr dI/dt -I R M V dd VDC - -I F -Vds www.freescale.net.cn