elm17413fa

Single P-channel MOSFET
ELM17413FA-S
■General description
■Features
ELM17413FA-S uses advanced trench technology
to provide excellent Rds(on), low gate charge and
operation with gate voltages as low as 2.5V and
internal ESD protection.
•
•
•
•
•
•
Vds=-20V
Id=-1.4A (Vgs=-10V)
Rds(on) < 113mΩ (Vgs=-10V)
Rds(on) < 135mΩ (Vgs=-4.5V)
Rds(on) < 180mΩ (Vgs=-2.5V)
ESD Rating : 2000V HBM
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Symbol
Vds
Limit
-20
Unit
V
Vgs
±12
-1.4
-1.2
V
Idm
-13
A
3
Pd
0.35
0.22
W
2
Tj, Tstg
-55 to 150
°C
Ta=25°C
Ta=70°C
Continuous drain current
Id
Pulsed drain current
Tc=25°C
Tc=70°C
Power dissipation
Junction and storage temperature range
Note
A
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
t≤10s
Maximum junction-to-ambient
Maximum junction-to-lead
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
300
Max.
360
Unit
°C/W
Note
1
350
280
425
320
°C/W
°C/W
1, 4
■Circuit
SC-70(TOP VIEW)
D
Pin No.
1
2
Pin name
GATE
SOURCE
3
DRAIN
G
S
5- 1
Single P-channel MOSFET
ELM17413FA-S
■Electrical characteristics
Parameter
Symbol
Condition
Min.
BVdss Id=-250μA, Vgs=0V
-20
Typ.
Ta=25°C
Max. Unit
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Idss
Vds=-20V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±12V
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
-1
Ta=55°C
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-4.5V, Vds=-5V
Rds(on)
Gfs
Vsd
V
-5
±10
-0.50
-13
-0.85
-1.20
94
113
Ta=125°C
Vgs=-4.5V, Id=-1.3A
130
111
160
135
Vgs=-2.5V, Id=-1.1A
Vds=-5V, Id=-1.4A
Is=-1A, Vgs=0V
150
5
-0.76
180
Vgs=-10V
Id=-1.4A
Is
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
Vgs=0V, Vds=-10V, f=1MHz
Vgs=0V, Vds=0V, f=1MHz
Vgs=-4.5V, Vds=-10V
Id=-1.4A
tr
Vgs=-10V, Vds=-10V
td(off) RL=7.1Ω, Rgen=3Ω
tf
trr
Qrr
If=-1.4A, dl/dt=100A/μs
If=-1.4A, dl/dt=100A/μs
NOTE :
μA
μA
V
A
mΩ
-1.00
S
V
-1
A
250
325
400
pF
40
22
63
37
11.2
85
52
17.0
pF
pF
Ω
3.2
0.6
4.5
nC
nC
0.9
11.0
5.5
22.0
8.0
6.1
1.4
nC
ns
ns
ns
ns
ns
nC
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design.
2. The power dissipation Pd is based on Tj(max.)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
3. Repetitive rating, pulse width limited by junction temperature Tj(Max.)=150°C. Ratings are based on low frequency
and duty cycle to keep initial Tj=25°C.
4. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
5. The static characteristics in Figures 1 to 6 are obtained using<300μs pulses, duty cycle 0.5%max.
6. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted
on 1in² FR-4 board with 2oz. Copper, assuming a maximum junction temperature Tj(Max.)=150°C. The SOA curve
provides a single pulse rating.
5- 2
Single P-channel MOSFET
AO7413
ELM17413FA-S
■Typical electrical and thermal characteristics
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
-5V
-9V
20
VDS=-5V
-4V
-8V
8
-3.5V
-7V
15
6
-6V
-ID(A)
-ID (A)
10
-10V
-3V
10
-2.5V
5
VGS=-1.5V
0
1
2
3
125�C
2
-2V
0
4
4
0
0
5
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
180
VGS=-2.5V
140
Normalized On-Resistance
RDS(ON) (mΩ
Ω)
1
2
3
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
4
1.60
160
VGS=-4.5V
120
VGS=-10V
100
ID=-1.1A, VGS=-2.5V
1.40
ID=-1.3A, VGS=-4.5V
1.20
ID=-1.4A, VGS=-10V
1.00
0.80
80
0
0
2
3
4
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
360
1.0E+01
ID=-1.4A
320
1.0E+00
280
1.0E-01
240
-IS (A)
RDS(ON) (mΩ
Ω)
25�C
200
125�C
160
125�C
25�C
1.0E-02
1.0E-03
1.0E-04
120
25�C
1.0E-05
80
0
0.0
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
2
4
6
8
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
5- 3
0.2
AO7413
Single P-channel MOSFET
ELM17413FA-S
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
600
5
VDS=-10V
ID=-1.4A
450
Capacitance (pF)
-VGS (Volts)
4
3
2
Ciss
300
150
1
0
1
2
3
4
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
5
100.0
5
10
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
20
1000
TJ(Max)=150�C
TA=25�C
10µs
RDS(ON)
limited
100
100µs
Power (W)
10.0
-ID (Amps)
Crss
0
0
1ms
1.0
10ms
DC
0.1
TJ(Max)=150�C
TA=25�C
0.0
0.01
10
Zθ JA Normalized Transient
Thermal Resistance
Coss
100ms
10s
10
1
0.1
0.1
1
10
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0.00001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
100
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=425�C/W
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
5- 4
T
100
1000
Single P-channel MOSFET
ELM17413FA-S
AO7413
■Test circuit and waveform
AO7413
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
+
VDC
-
Qgd
Qgs
Vds
+
VDC
DUT
Vgs
Ig
Charge
R esistive S w itching Test C ircuit & W aveform s
RL
V ds
Vgs
V DC
td(o n)
t d(o ff)
tr
tf
90%
V dd
+
DUT
Vgs
-
Rg
t o ff
to n
V gs
10%
V ds
D iode R e covery T e st C ircuit & W aveform s
Q rr = -
V ds +
DUT
Vds -
Isd
V gs
Ig
Idt
V gs
-Isd
L
+ V dd
VDC
-
-I F
t rr
dI/dt
-I R M
-Vds
5- 5
V dd
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