TS8542VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip (L x W x H in mm): 1.066 x 1.066 x 0.17 • Peak wavelength: λ = 850 nm • Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC GENERAL INFORMATION DESCRIPTION TS8542VA is a high power infrared, 850 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity Confoguration is “n-up”. The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore sold die may not perform on an equivalent basis to standard package products. PRODUCT SUMMARY COMPONENT TS8542VA fe (mW) ϕ (deg) λp (nm) tr (ns) 350 55 850 15 Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TS8542VA-SF-F PACKAGING REMARKS PACKAGE FORM Wafer sawn on foil MOQ: 5000 pcs Chip Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE UNIT Forward current IF 1 A Reverse voltage VR 5 V IFSM 5 A Surge forward current TEST CONDITION tp = 100 μs Junction temperature Storage temperature range chip Storage temperature range on foil Temperature during packaging Rev. 1.1, 20-Feb-12 tp < 10 s Tj 140 °C Tstg1 - 40 to + 125 °C Tstg2 - 20 to + 65 °C 280 °C Document Number: 83474 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TS8542VA www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL IF = 100 mA VF Forward voltage Radiant power (1) Radiant intensity (2) Reverse voltage Angle of half intensity MIN. TYP. MAX. UNIT 1.3 1.5 V 2.0 2.5 IF = 1 A VF IF = 100 mA φe 32 IF = 1000 mA φe 350 mW IF = 100 mA Ie 7.5 mW/sr IR = 10 μA VR 10 IF = 100 mA ϕ 50 55 60 deg 830 850 870 nm V mW V Peak wavelength IF = 1 A λp Spectral bandwidth IF = 1 A λ0.5 30 nm IF = 1 A, RL = 50 Ω tr , tf 15 ns Rise time/fall time Notes (1) The measurements are based on samples of die which are mounted on a TO-18 gold header without resin coating (2) The radiant intensity, I , is measured on the geometric axis of the TO-18 header e BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 0° 10° 20° 0.75 0.5 0.25 0 650 750 850 0.9 50° 0.8 60° 70° 0.7 80° 950 0.6 0.4 0.2 0 94 8013 λ- Wavelength (nm) 21776 40° 1.0 ϕ - Angular Displacement 30° Ie, rel - Relative Radiant Sensitivity Φe, rel - Relative Radiant Power 1 Fig. 1 - Relative Spectral Emission φe rel = f (λ) Fig. 2 - Radiant Characteristics Irel = f(ϕ) MECHANICAL DIMENSIONS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Length of chip edge (x-direction) Lx 1.066 mm Length of chip edge (y-direction) Ly 1.066 mm Die height H 0.17 mm Diameter of bondpad d 0.127 mm ADDITIONAL INFORMATION Frontside metallization, anode Gold alloy Backside metallization, cathode Gold alloy Dicing Die bonding technology Sawing Epoxy bonding Note • All chips are checked in accordance with the Vishay Semiconductor, specification of visual inspection FVOV6870. The visual inspection shall be made in accordance with the “specification of visual inspection as referenced”. The visual inspection of chip backside is performed with stereo microscope with incident light and 40x to 80x magnification. The quality inspection (final visual inspection) is performed by production. An additional visual inspection step as special release procedure by QM is not installed. Rev. 1.1, 20-Feb-12 Document Number: 83474 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TS8542VA www.vishay.com Vishay Semiconductors HANDLING AND STORAGE CONDITIONS • The hermetically sealed shipment lots shall be opened in temperature and moisture controlled cleanroom environment only. It is mandatory to follow the rules for disposition of material that can be hazardous for humans and environment. • Product must be handled only at ESD safe workstations. Standard ESD precautions and safe work environments are as defined in MIL-HDBK-263. • Singulated die are not to be handled with tweezers. A vacuum wand with non metallic ESD protected tip should be used. PACKING Chips are fixed on adhesive foil. Upon request the foils can be mounted on plastic frame or disco frame. For shipment, the wafers are arranged to stacks and hermetically sealed in plastic bags to ensure protection against environmental influence (humidity and contamination). Use for recycling reliable operators only. We can help getting in touch with your nearest sales office. By agreement we will take back packing material, if it is sorted. You will have to bear the costs of transport. We will invoice you for any costs incurred for packing material that is returned unsorted or which we are not obliged to accept. Rev. 1.1, 20-Feb-12 Document Number: 83474 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000