Data Sheet

PMPB15XN
20 V, single N-channel Trench MOSFET
13 September 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
• Trench MOSFET technology
• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
• Exposed drain pad for excellent thermal conduction
• Tin-plated 100 % solderable side pads for optical solder inspection
1.3 Applications
• Charging switch for portable devices
• DC-to-DC converters
• Power management in battery-driven portable devices
• Hard disk and computing power management
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
20
V
VGS
gate-source voltage
-12
-
12
V
ID
drain current
-
-
10.4
A
-
18
21
mΩ
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
Static characteristics
RDSon
drain-source on-state
resistance
[1]
VGS = 4.5 V; ID = 7.3 A; Tj = 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
2
drain 6 cm .
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PMPB15XN
NXP Semiconductors
20 V, single N-channel Trench MOSFET
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
D
drain
2
D
drain
3
G
gate
4
S
source
5
D
drain
6
D
drain
7
D
drain
8
S
source
Simplified outline
1
Graphic symbol
D
6
7
2
3
8
5
G
4
S
017aaa253
Transparent top view
DFN2020MD-6 (SOT1220)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
PMPB15XN
Description
Version
DFN2020MD-6 plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals
SOT1220
4. Marking
Table 4.
Marking codes
Type number
Marking code
PMPB15XN
1J
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
20
V
VGS
gate-source voltage
-12
12
V
ID
drain current
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
-
10.4
A
VGS = 4.5 V; Tamb = 25 °C
[1]
-
7.3
A
VGS = 4.5 V; Tamb = 100 °C
[1]
-
4.6
A
-
24
A
-
1.7
W
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
PMPB15XN
Product data sheet
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PMPB15XN
NXP Semiconductors
20 V, single N-channel Trench MOSFET
Symbol
Parameter
Conditions
Tamb = 25 °C; t ≤ 5 s
[1]
Tsp = 25 °C
Min
Max
Unit
-
3.5
W
-
12.5
W
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
2
A
Source-drain diode
IS
source current
[1]
Tamb = 25 °C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
2
drain 6 cm .
017aaa123
120
Pder
(%)
Ider
(%)
80
80
40
40
0
- 75
Fig. 1.
017aaa124
120
- 25
25
75
125
Tj (°C)
Normalized total power dissipation as a
function of junction temperature
PMPB15XN
Product data sheet
0
- 75
175
Fig. 2.
- 25
75
125
Tj (°C)
175
Normalized continuous drain current as a
function of junction temperature
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PMPB15XN
NXP Semiconductors
20 V, single N-channel Trench MOSFET
017aaa794
102
ID
(A)
Limit RDSon = VDS/ID
10
tp = 100 µs
tp = 1 ms
1
tp = 10 ms
DC; Tsp = 25 °C
tp = 100 ms
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
10-1
10-2
10-2
10-1
1
10
102
VDS (V)
IDM = single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
in free air; t ≤ 5 s
thermal resistance
from junction to solder
point
[1]
[2]
PMPB15XN
Product data sheet
Min
Typ
Max
Unit
[1]
-
235
270
K/W
[2]
-
67
74
K/W
[2]
-
33
36
K/W
-
5
10
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
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PMPB15XN
NXP Semiconductors
20 V, single N-channel Trench MOSFET
017aaa542
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
102
0.5
0.33
0.25
0.2
0.1
10
0.05
0.02
0.01
0
1
10-3
10-2
10-1
1
102
10
103
tp (s)
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa543
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
10
0.25
0.2
0.1
0.05
0.02
0.01
0
1
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm
Fig. 5.
1
102
10
103
tp (s)
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
20
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C
0.4
0.65
0.9
V
IDSS
drain leakage current
VDS = 20 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
IGSS
gate leakage current
VGS = -12 V; VDS = 0 V; Tj = 25 °C
-
-
-100
nA
PMPB15XN
Product data sheet
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PMPB15XN
NXP Semiconductors
20 V, single N-channel Trench MOSFET
Symbol
Parameter
RDSon
drain-source on-state
resistance
Conditions
Min
Typ
Max
Unit
VGS = 12 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = 4.5 V; ID = 7.3 A; Tj = 25 °C
-
18
21
mΩ
VGS = 4.5 V; ID = 7.3 A; Tj = 150 °C
-
27
32
mΩ
VGS = 2.5 V; ID = 6.4 A; Tj = 25 °C
-
21
27
mΩ
VGS = 1.8 V; ID = 2.1 A; Tj = 25 °C
-
23
41
mΩ
gfs
forward
transconductance
VDS = 10 V; ID = 7.3 A; Tj = 25 °C
-
30
-
S
RG
gate resistance
f = 1 MHz
-
2
-
Ω
Dynamic characteristics
QG(tot)
total gate charge
VDS = 10 V; ID = 7.3 A; VGS = 4.5 V;
-
13.4
20.2
nC
QGS
gate-source charge
Tj = 25 °C
-
1.5
-
nC
QGD
gate-drain charge
-
2.6
-
nC
Ciss
input capacitance
VDS = 10 V; f = 1 MHz; VGS = 0 V;
-
1240
-
pF
Coss
output capacitance
Tj = 25 °C
-
145
-
pF
Crss
reverse transfer
capacitance
-
125
-
pF
td(on)
turn-on delay time
VDS = 10 V; ID = 7.3 A; VGS = 4.5 V;
-
9
-
ns
tr
rise time
RG(ext) = 6 Ω; Tj = 25 °C
-
24
-
ns
td(off)
turn-off delay time
-
31
-
ns
tf
fall time
-
36
-
ns
-
0.7
1.2
V
Source-drain diode
VSD
source-drain voltage
28
4.5 V
ID
(A)
24
IS = 2 A; VGS = 0 V; Tj = 25 °C
017aaa795
2.5 V
2.1 V
2V
017aaa796
10-2
ID
(A)
VGS = 1.8 V
10-3
20
1.6 V
16
min
typ
max
10-4
12
1.4 V
8
10-5
1.2 V
4
0
Fig. 6.
0
1
2
3
VDS (V)
4
10-6
0
0.4
0.8
VGS (V)
1.2
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Output characteristics: drain current as a
Fig. 7.
function of drain-source voltage; typical values
Sub-threshold drain current as a function of
gate-source voltage
PMPB15XN
Product data sheet
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PMPB15XN
NXP Semiconductors
20 V, single N-channel Trench MOSFET
017aaa797
0.1
1.5 V 1.6 V 1.7 V 1.8 V
RDSon
(Ω)
RDSon
(Ω)
0.8
0.08
0.6
0.06
0.4
0
0.04
2.2 V
2.5 V
0.2
8
16
ID (A)
0
24
Tj = 25 °C
Fig. 8.
Tj = 150 °C
0.02
VGS = 4.5 V
0
017aaa798
0.10
2V
Tj = 25 °C
0
1
2
3
4
VGS (V)
5
ID = 6 A
Drain-source on-state resistance as a function
of drain current; typical values
017aaa799
24
Fig. 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
017aaa800
1.50
a
ID
(A)
1.25
16
1.00
8
0.75
0
Tj = 150 °C
Tj = 25 °C
1
2
0
VGS (V)
0.50
-60
3
VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
PMPB15XN
Product data sheet
0
60
120
Tj (°C)
180
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
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PMPB15XN
NXP Semiconductors
20 V, single N-channel Trench MOSFET
017aaa801
1.5
017aaa802
104
C
(pF)
VGS(th)
(V)
Ciss
103
1.0
max
typ
0.5
Coss
102
Crss
min
0
-75
-25
25
75
125
Tj (°C)
10
10-1
175
ID = 0.25 mA; VDS = VGS
1
10
VDS (V)
102
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
017aaa803
4.5
VDS
VGS
(V)
ID
3.0
VGS(pl)
VGS(th)
VGS
1.5
QGS1
QGS2
QGS
QGD
QG(tot)
017aaa137
0
0
5
10
QG (nC)
Fig. 15. Gate charge waveform definitions
15
ID = 6 A; VDS = 10 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
PMPB15XN
Product data sheet
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PMPB15XN
NXP Semiconductors
20 V, single N-channel Trench MOSFET
017aaa804
2.0
IS
(A)
1.5
1.0
0.5
Tj = 150 °C
0
0
0.2
Tj = 25 °C
0.4
0.6
0.8
1.0
VDS (V)
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
8. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 17. Duty cycle definition
9. Package outline
0.51
0.61
0.2
0.3
1.9
2.1
1.0
1.2
0.2
0.3
3
4
2
5
1
6
1.1
1.3
1.9
2.1
Dimensions in mm
0.25
0.35
0.65
12-04-30
Fig. 18. Package outline DFN2020MD-6 (SOT1220)
PMPB15XN
Product data sheet
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PMPB15XN
NXP Semiconductors
20 V, single N-channel Trench MOSFET
10. Soldering
Footprint information for reflow soldering of DFN2020MD-6 package
0.33 (6×)
SOT1220
0.76
0.43 (6×)
0.66
0.53 (6×)
0.56
0.25 0.35 0.45
0.775
0.65
2.06
0.285
1.25
1.35
0.35 (6×)
1.05
0.25 (6×)
0.65
0.45 (6×)
0.9
1.1
1.2
0.935
0.935
2.5
solder land
solder land plus solder paste
solder paste deposit
solder resist
occupied area
Dimensions in mm
sot1220_fr
Fig. 19. Reflow soldering footprint for DFN2020MD-6 (SOT1220)
PMPB15XN
Product data sheet
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PMPB15XN
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20 V, single N-channel Trench MOSFET
11. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMPB15XN v.1
20120913
Product data sheet
-
-
PMPB15XN
Product data sheet
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PMPB15XN
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20 V, single N-channel Trench MOSFET
13. Contents
1
1.1
1.2
1.3
1.4
Product profile ....................................................... 1
General description .............................................. 1
Features and benefits ...........................................1
Applications .......................................................... 1
Quick reference data ............................................ 1
2
Pinning information ............................................... 2
3
Ordering information ............................................. 2
4
Marking ................................................................... 2
5
Limiting values .......................................................2
6
Thermal characteristics .........................................4
7
Characteristics ....................................................... 5
8
Test information ..................................................... 9
9
Package outline ..................................................... 9
10
Soldering .............................................................. 10
11
Revision history ................................................... 11
12
12.1
12.2
12.3
12.4
Legal information ............................................
Data sheet status ...........................................
Definitions ......................................................
Disclaimers ....................................................
Trademarks ...................................................
© NXP B.V. 2012. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 13 September 2012
PMPB15XN
Product data sheet
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