General Purpose Transistor KTC3875GR-G (NPN) RoHS Device Features - High hFE - Low noise SOT-23 Circuit Diagram 1 : BASE 2 : EMITTER 3 : COLLECTOR Collector 3 0.118(3.00) 0.110(2.80) 3 1 Base 0.055(1.40) 0.047(1.20) 1 2 Emitter 2 0.079(2.00) 0.071(1.80) Maximum Ratings (at T =25°C unless otherwise noted) 0.006(0.15) A Symbol Value Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 50 V Emitter-Base voltage VEBO 5 V Parameter 0.003(0.08) 0.045(1.15) 0.035(0.90) 0.100(2.55) 0.089(2.25) 0.004(0.10) max 0.020(0.50) Collector current IC 150 mA Collector power dissipation PC 150 mW RθJA 833 °C/W Junction temperature range TJ 150 °C Storage temperature range Tstg -55~+150 °C Thermal resistance from junction to ambient 0.020(0.50) 0.012(0.30) 0.012(0.30) Dimensions in inches and (millimeter) Electrical Characteristics (at T =25°C unless otherwise noted) A Parameter Conditions Symbol Min Typ Max Unit Collector-Base breakdown voltage IC=100μA , IE=0 V(BR)CBO 60 V Collector-Emitter breakdown voltage IC=1mA , IB=0 V(BR)CEO 50 V Emitter-Base breakdown voltage IE=100μA , IC=0 V(BR)EBO 5 V Collector cut-off current VCB=60V , IE=0 ICBO 0.1 µA Emitter cut-off current VEB=5V , IC=0 IEBO 0.1 µA DC current gain VCE=6V , IC=2mA hFE Collector-emitter saturation voltage IC=100mA , IB=10mA VCE(sat) Base-emitter saturation voltage IC=100mA , IB=10mA VCE(sat) Transition frequency VCE=10V , IC=1mA Collector output capacitance VCB=10V , IE=0, f=1MHZ Cob 2.0 3.5 PF Noise figure VCB=6V , Ic=0.1mA, Rg=10kΩ f=1KHZ NF 1.0 10 dB fT 200 400 0.1 0.25 V 1 V 80 MHZ Company reserves the right to improve product design , functions and reliability without notice. REV: A QW-BTR57 Page 1 Comchip Technology CO., LTD. General Purpose Transistor RATING AND CHARACTERISTIC CURVES ( KTC3875GR-G ) Fig.2 - hFE— IC Fig.1 - Static Characteristic 4.0 800 IB=10uA IB=9uA VCE=6V IB=8uA 3.0 DC Current Gain, hFE Collector Current, IC (mA) 3.5 COMMON -500uA EMITTER -450uA Ta=25°C IB=7uA 2.5 IB=6uA 2.0 IB=5uA IB=4uA 1.5 IB=3uA 1.0 600 400 Ta=25°C 200 IB=2uA 0.5 IB=1uA 0 0 0 2 4 6 8 10 1 Collector-Emitter Voltage, VCE (V) Fig.3 - VBEsat — IC Fig.4 - VCEsat — IC Collector-Emitter Saturation Voltage, VCEsat (mV) Base-Emitter Saturation Voltage, VBEsat (mV) 150 200 β=10 800 Ta=25°C 600 Ta=100°C 400 200 β=10 150 100 Ta=100°C 50 Ta=25°C 0 0.1 10 1 100 150 0.1 10 1 100 150 Collector Current, Ic (mA) Collector Current, IC (mA) Fig.5 - IC — VBE Fig.6 - PC — Ta 200 Collector Power Dissipation, PD (mW) 150 100 Ta=100°C 10 Ta=25°C 1.0 VCE=6V 0.1 300 100 10 Collector Current , IC (mA) 1000 Collector Current, IC (mA) Ta=100°C 175 150 125 100 75 50 25 0 400 500 600 700 800 900 0 Base-Emitter Voltage, VBE (mV) 25 50 75 100 125 150 Ambient Temperature , Ta (°C) Company reserves the right to improve product design , functions and reliability without notice. REV: A QW-BTR57 Page 2 Comchip Technology CO., LTD. General Purpose Transistor Reel Taping Specification P1 XXX B F E d P0 12 o 0 D2 D1 D W1 SOT-23 SOT-23 SYMBOL A B C d D D1 D2 (mm) 3.15 ± 0.10 2.77 ± 0.10 1.22 ± 0.10 1.50 ± 0.10 178.00 ± 2.00 54.40 ± 1.00 13.00 ± 1.00 (inch) 0.124 ± 0.004 0.109 ± 0.004 0.048 ± 0.004 0.059 ± 0.004 7.008 ± 0.079 2.142 ± 0.039 0.512 ± 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.10 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 / - 0.10 12.30 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.004 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.315 + 0.012 / - 0.004 0.484 ± 0.039 Company reserves the right to improve product design , functions and reliability without notice. REV: A QW-BTR57 Page 3 Comchip Technology CO., LTD. General Purpose Transistor Marking Code 3 Part Number Marking Code KTC3875GR-G ALG ALG 1 2 Suggested PAD Layout B SOT-23 SIZE (mm) (inch) A 0.80 0.031 B 0.60 0.024 C 1.90 0.075 D 2.02 0.080 E 2.82 0.111 A D E C Standard Packaging REEL PACK Case Type SOT-23 REEL Reel Size ( pcs ) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV: A QW-BTR57 Page 4 Comchip Technology CO., LTD.