DCR1110F52

DCR1110F52
Phase Control Thyristor
DS5965-3 August 2014 (LN31843)
FEATURES
KEY PARAMETERS

Double Side Cooling

High Surge Capability
VDRM
IT(AV)
ITSM
dV/dt*
dI/dt
APPLICATIONS
5200V
1107A
14800A
1500V/µs
800A/µs
* Higher dV/dt selections available

High Power Drives

High Voltage Power Supplies

Static Switches
VOLTAGE RATINGS
Part and
Ordering
Number
DCR1110F52*
DCR1110F50
Repetitive Peak
Voltages
VDRM and VRRM
V
5200
5000
Conditions
Tvj = -40°C to 125°C,
IDRM = IRRM = 100mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
o
o
*5000V @ -40 C, 5200V @ 0 C
ORDERING INFORMATION
Outline type code: F
(See Package Details for further information)
Fig. 1 Package outline
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DCR1110F52
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
1/10
www.dynexsemi.com
DCR1110F52
SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60°C unless stated otherwise
Symbol
Parameter
Test Conditions
Max.
Units
1107
A
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
1739
A
Continuous (direct) on-state current
-
1684
A
IT
Half wave resistive load
SURGE RATINGS
Symbol
ITSM
2
It
Parameter
Surge (non-repetitive) on-state current
Test Conditions
Max.
Units
10ms half sine, Tcase = 125°C
14.8
kA
VR = 0
1.097
MA s
Min.
Max.
Units
2
I t for fusing
2
THERMAL AND MECHANICAL RATINGS
Symbol
Rth(j-c)
Rth(c-h)
Parameter
Thermal resistance – junction to case
Thermal resistance – case to heatsink
Test Conditions
Double side cooled
DC
-
0.0184
°C/W
Single side cooled
Anode DC
-
0.0333
°C/W
Cathode DC
-
0.0418
°C/W
Double side
-
0.004
°C/W
-
0.008
°C/W
-
125
°C
Clamping force 23kN
(with mounting compound)
Blocking VDRM / VRRM
Single side
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-55
125
°C
Fm
Clamping force
20.0
25.0
kN
2/10
www.dynexsemi.com
DCR1110F52
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol
IRRM/IDRM
Parameter
Test Conditions
Min.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125°C
-
100
mA
dV/dt
Max. linear rate of rise of off-state voltage
To 67% VDRM, Tj = 125°C, gate open
-
1500
V/µs
dI/dt
Rate of rise of on-state current
From 67% VDRM to 2x IT(AV)
Repetitive 50Hz
-
200
A/µs
Gate source 30V, 10,
Non-repetitive
-
800
A/µs
tr < 0.5µs, Tj = 125°C
VT(TO)
rT
tgd
Threshold voltage – Low level
300A to 750A at Tcase = 125°C
-
0.948
V
Threshold voltage – High level
750A to 4000A at Tcase = 125°C
-
1.078
V
On-state slope resistance – Low level
300A to 750A at Tcase = 125°C
-
0.783
m
On-state slope resistance – High level
750A to 4000A at Tcase = 125°C
-
0.610
m
VD = 67% VDRM, gate source 30V, 10
-
3
µs
-
1000
µs
2200
3800
µC
90
115
A
Delay time
tr = 0.5µs, Tj = 25°C
tq
Turn-off time
Tj = 125°C, VR = 100V, dI/dt = 5A/µs,
dVDR/dt = 20V/µs linear to 2000V
QS
Stored charge
IRR
Reverse recovery current
IL
Latching current
Tj = 25°C, VD = 5V
-
3
A
IH
Holding current
Tj = 25°C, RG-K = , ITM = 500A, IT = 5A
-
300
mA
IT = 1000A, tp = 1000us,Tj = 125°C,
dI/dt =5A/µs,
3/10
www.dynexsemi.com
DCR1110F52
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Test Conditions
Max.
Units
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25°C
1.5
V
VGD
Gate non-trigger voltage
At 50% VDRM, Tcase = 125°C
0.4
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25°C
350
mA
IGD
Gate non-trigger current
At 50% VDRM, Tcase = 125°C
10
mA
CURVES
4500
Instantaneous on-state current, IT - (A)
4000
3500
3000
2500
2000
1500
min 25°C
1000
max 25°C
500
min 125°C
max 125°C
0
0.5
1.5
2.5
3.5
4.5
Instantaneous on-state voltage, V T - (V)
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION
VTM = A + Bln (IT) + C.IT+D.IT
Where
A = -0.069834
B = 0.220863
C = 0.000638
D = -0.013352
these values are valid for Tj = 125°C for IT 300A to 4000A
4/10
www.dynexsemi.com
DCR1110F52
SEMICONDUCTOR
130
16
180
120
90
60
30
120
14
Maximum case temperature, T case ( o C )
110
Mean power dissipation - (kW)
12
10
8
6
4
180
120
90
60
30
2
0
0
1000
2000
100
90
80
70
60
50
40
30
20
10
0
0
3000
Mean on-state current, IT(AV) - (A)
1000
1250
1500
1750
12
10
Mean power dissipation - (kW)
Maximum heatsink temperature, T Heatsink - ( ° C)
750
Fig.4 Maximum permissible case temperature,
double side cooled – sine wave
180
120
90
60
30
100
500
Mean on-state current, IT(AV) - (A)
Fig.3 On-state power dissipation – sine wave
125
250
75
50
8
6
4
d.c.
180
120
90
60
30
25
2
0
0
0
500
1000
1500
Mean on-state current, IT(AV) - (A)
Fig.5 Maximum permissible heatsink temperature,
double side cooled – sine wave
0
1000
2000
3000
4000
Mean on-state current, IT(AV) - (A)
Fig.6 On-state power dissipation – rectangular wave
5/10
www.dynexsemi.com
DCR1110F52
SEMICONDUCTOR
130
110
100
d.c.
180
120
90
60
30
120
Maximum permissible case temperature , Tcase -(° C)
120
Maximum permissible case temperature , Tcase -(° C)
130
d.c.
180
120
90
60
30
90
80
70
60
50
40
30
20
10
110
100
90
80
70
60
50
40
30
20
10
0
0
0
500
1000
1500
2000
2500
0
500
Fig.7 Maximum permissible case temperature,
double side cooled – rectangular wave
Double side cooled
Thermal Impedance Zth(j-c) ( °C/kW )
Double Side Cooled
Anode side cooled
Cathode Side Cooled
2000
2500
Ri (°C/kW)
1
7.5608
2
4.0772
Ti (s)
0.6877
0.2537
0.0614
0.0101
Ri (°C/kW)
6.7211
4.6219
15.5387
14.8631
Ti (s)
Cathode side cooled
35.0
1500
Fig.8 Maximum permissible heatsink temperature,
double side cooled – rectangular wave
45.0
40.0
1000
Mean on-state current, IT(AV) - (A)
Mean on-state current, IT(AV) - (A)
Ri (°C/kW)
Ti (s)
Anode Side Cooled
3
3.8420
4
2.8671
0.1910
0.0158
5.0011
3.3169
11.5564
8.5810
4.7942
8.3643
4.2216
6.0269
0.0166
0.2255
i 4
Z th  [ Rii(41  exp(T / Ti )]
Z th  [ Ri  (1  exp(T / Ti )]
30.0
i 1
25.0
i 1
20.0
Rth(j-c) Conduction
Tables show the increments of thermal resistance Rth(j-c) when the device
operates at conduction angles other than d.c.
15.0
10.0
5.0
0.0
0.001
0.01
0.1
1
Time ( s )
10
100
°
180
120
90
60
30
15
Double side cooling
Zth (z)
sine.
rect.
3.19
2.14
3.72
3.10
4.29
3.64
4.81
4.23
5.22
4.88
5.40
5.22
°
180
120
90
60
30
15
Anode Side Cooling
Zth (z)
sine.
rect.
2.97
2.03
3.43
2.89
3.92
3.36
4.36
3.87
4.69
4.41
4.84
4.70
Cathode Sided Cooling
Zth (z)
°
sine.
rect.
180
2.95
2.02
120
3.40
2.87
90
3.88
3.34
60
4.31
3.84
30
4.64
4.37
15
4.79
4.65
Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW)
6/10
www.dynexsemi.com
DCR1110F52
SEMICONDUCTOR
40
Conditions:
Tcase = 125 C
VR =0
Pulse width = 10ms
Conditions:
Tcase= 125 C
VR = 0
half-sine wave
35
10
30
3
ITSM
I2t
25
2
I2t (MA2s)
Surge current, ITSM - (kA)
Surge current, ITSM- (kA)
100
20
15
1
10
5
0
1
1
10
100
Number of cycles
0
1
100
Pulse width, tP - (ms)
Fig.10 Multi-cycle surge current
Fig.11 Single-cycle surge current
7000
300
Q s typical = 1682.8*(di/dt)
0.4945
Reverse recovery current, Irr - (A)
6000
Stored Charge, Qs - (uC)
10
5000
4000
Conditions:
Tj = 125°C,
V peak ~ 3000V
Vrm ~ 2200V
snubber as appropriate to
control reverse voltage
3000
2000
1000
0
250
IRR typical = 32.97*(di/dt) 0.7324
200
150
Conditions:
Tj = 125°C,
V peak ~ 3000V
Vrm ~ 2200V
snubber as appropriate to
control reverse voltage
100
50
0
0
5
10
15
Rate of decay of on-state current, di/dt - (A/us)
Fig.12 Stored charge vs di/dt
20
0
5
10
15
20
Rate of decay of on-state current, di/dt - (A/us)
Fig.13 Reverse recovery current vs di/dt
7/10
www.dynexsemi.com
DCR1110F52
SEMICONDUCTOR
Fig14 Gate Characteristics
30
Lower Limit
Upper Limit
5W
10W
20W
50W
100W
150W
-40C
Gate trigger voltage, VGT - (V)
25
20
15
10
5
0
0
1
2
3
4
5
6
7
8
9
10
Gate trigger current, IGT - (A)
Fig. 15 Gate characteristics
8/10
www.dynexsemi.com
DCR1110F52
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
3rd ANGLE PROJECTION
DO NOT SCALE
IF IN DOUBT ASK
HOLE Ø3.60 X 2.00
DEEP (IN BOTH
ELECTRODES)
20° OFFSET (NOM.)
TO GATE TUBE
Ø73.0 MAX
Ø47.0 NOM
Ø1.5
CATHODE
GATE
ANODE
Ø47.0 NOM
FOR PACKAGE HEIGHT
SEE TABLE
Device
DCR1003SF18
DCR1006SF28
DCR1008SF36
DCR1020F65
DCR1050SF42
DCR1110F52
DCR1180F52
DCR1260F42
DCR1274SF18
DCR1275SF28
DCR1277SF36
DCR1279SF48
DCR1350F42
DCR1610F28
DCR1640F28
DCR1770F22
DCR1830F22
DCR750F85
DCR810F85
DCR840F48
DCR890F65
DCR950F65
Maximum Minimum
Thickness Thickness
(mm)
(mm)
26.415
25.865
26.49
25.94
26.72
26.17
27.1
26.55
26.72
26.17
26.84
26.29
26.84
26.29
26.72
26.17
26.415
25.865
26.49
25.94
26.72
26.17
26.84
26.29
26.72
26.17
26.49
25.94
26.49
25.94
26.415
25.865
26.415
25.865
27.46
26.91
27.46
26.91
26.84
26.29
27.1
26.5
27.1
26.5
Lead length: 420mm
Lead terminal connector: M4 ring
Package outline type code: F
Fig.16 Package outline
9/10
www.dynexsemi.com
DCR1110F52
SEMICONDUCTOR
IMPORTANT INFORMATION:
This publication is provided for information only and not for resale.
The products and information in this publication are intended for use by appropriately trained technical personnel.
Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute
any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of
the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements
are met. Should additional product information be needed please contact Customer Service.
Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical
errors. The information is provided without any warranty or guarantee of any kind.
This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the
most up to date version and has not been superseded.
The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property.
The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or
malfunction.
The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use
protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any
electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves.
Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the
product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include
potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design
and safety precautions should always be followed to protect persons and property.
Product Status & Product Ordering:
We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for
production. The annotations are as follows:Target Information:
Preliminary Information:
No Annotation:
This is the most tentative form of information and represents a very preliminary specification.
No actual design work on the product has been started.
The product design is complete and final characterisation for volume production is in
progress.The datasheet represents the product as it is now understood but details may change.
The product has been approved for production and unless otherwise notified by Dynex any
product ordered will be supplied to the current version of the data sheet prevailing at the
time of our order acknowledgement.
All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request.
Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their
respective owners.
HEADQUARTERS OPERATIONS
CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LIMITED
Doddington Road, Lincoln, Lincolnshire, LN6 3LF
United Kingdom.
Phone: +44 (0) 1522 500500
Fax:
+44 (0) 1522 500550
Web: http://www.dynexsemi.com
Phone: +44 (0) 1522 502753 / 502901
Fax:
+44 (0) 1522 500020
e-mail: [email protected]
 Dynex Semiconductor Ltd.
Technical Documentation – Not for resale.
10/10
www.dynexsemi.com
Similar pages