bc337.pdf

BC337 / BC338
BC337 / BC338
General Purpose Si-Epitaxial Planar Transistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
NPN
NPN
Version 2006-05-30
Power dissipation
Verlustleistung
18
9
16
CBE
2 x 2.54
Dimensions - Maße [mm]
625 mW
Plastic case
Kunststoffgehäuse
TO-92
(10D3)
Weight approx. – Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
BC337
BC338
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
E-B short
VCES
50 V
30 V
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
B open
VCEO
45 V
25 V
Emitter-Base-voltage – Emitter-Basis-Spannung
C open
VEBO
5V
Power dissipation – Verlustleistung
Ptot
625 mW 1)
Collector current – Kollektorstrom (dc)
IC
800 mA
Peak Collector current – Kollektor-Spitzenstrom
ICM
1A
Base current – Basisstrom
IB
100 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis 2)
VCE = 1 V, IC = 100 mA
Group -16
Group -25
Group -40
hFE
hFE
hFE
100
160
250
160
250
400
250
400
630
VCE = 1 V, IC = 300 mA
Group -16
Group -25
Group -40
hFE
hFE
hFE
60
100
170
130
200
320
–
–
–
–
–
0.7 V
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
IC = 500 mA, IB = 50 mA
1
2
VCEsat
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
BC337 / BC338
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
VBE
–
–
1.2 V
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
VCE = 1 V, IC = 300 mA,
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
VCE = 45 V, (B-E short)
VCE = 25 V, (B-E short)
BC337
BC338
ICES
ICES
–
–
2 nA
2 nA
100 nA
100 nA
VCE = 45 V, Tj = 125°C, (B-E short)
VCE = 25 V, Tj = 125°C, (B-E short)
BC337
BC338
ICES
ICES
–
–
–
–
10 µA
10 µA
fT
–
100 MHz
–
CCBO
–
12 pF
–
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 50 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE =ie = 0, f = 1 MHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 200 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BC327 / BC328
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
BC337-16
BC337-25
BC337-40
BC338-16
BC338-25
BC338-40
120
[%]
100
80
60
40
20
Ptot
0
0
TA
50
100
150
[°C]
Power dissipation versus ambient temperature 1)
Verlustleistung in Abh. von d. Umgebungstemp.1)
2
1
2
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
http://www.diotec.com/
© Diotec Semiconductor AG
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