bc327bk.pdf

BC327-xBK / BC328-xBK
BC327-xBK / BC328-xBK
General Purpose Si-Epitaxial Planar Transistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
PNP
PNP
Version 2010-06-23
Power dissipation
Verlustleistung
±0.1
CBE
min 12.5
4.6
±0.1
4.6
2 x 1.27
625 mW
Plastic case
Kunststoffgehäuse
TO-92
(10D3)
Weight approx. – Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Special packaging bulk
Sonder-Lieferform Schüttgut
Dimensions - Maße [mm]
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
BC327
BC328
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
E-B short
- VCES
50 V
30 V
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
B open
- VCEO
45 V
25 V
Emitter-Base-voltage – Emitter-Basis-Spannung
C open
- VEBO
5V
Power dissipation – Verlustleistung
Ptot
625 mW 1)
Collector current – Kollektorstrom (dc)
- IC
800 mA
Peak Collector current – Kollektor-Spitzenstrom
- ICM
1A
Base current – Basisstrom
- IB
100 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis 2)
- VCE = 1 V, - IC = 100 mA
Group -16
Group -25
Group -40
hFE
hFE
hFE
100
160
250
160
250
400
250
400
630
- VCE = 1 V, - IC = 300 mA
Group -16
Group -25
Group -40
hFE
hFE
hFE
60
100
170
130
200
320
–
–
–
–
–
0.7 V
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
- IC = 500 mA, - IB = 50 mA
1
2
- VCEsat
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
BC327-xBK / BC328-xBK
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
- VBE
–
–
1.2 V
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
- VCE = 1 V, - IC = 300 mA,
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
- VCE = 45 V, (B-E short)
- VCE = 25 V, (B-E short)
BC327
BC328
- ICES
- ICES
–
–
2 nA
2 nA
100 nA
100 nA
- VCE = 45 V, Tj = 125°C, (B-E short)
- VCE = 25 V, Tj = 125°C, (B-E short)
BC327
BC328
- ICES
- ICES
–
–
–
–
10 µA
10 µA
fT
–
100 MHz
–
CCBO
–
12 pF
–
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 50 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE =ie = 0, f = 1 MHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
< 200 K/W 1)
RthA
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BC337 / BC338
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
BC327-16
BC327-25
BC327-40
BC328-16
BC328-25
BC328-40
120
[%]
100
80
60
40
20
Ptot
0
0
TA
50
100
150
[°C]
Power dissipation versus ambient temperature )
1
Verlustleistung in Abh. von d. Umgebungstemp. )
1
2
1
2
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
http://www.diotec.com/
© Diotec Semiconductor AG
Similar pages