Datasheet, April 2010 2ED020I06-FI Dual IGBT Driver IC April 2010 Power Managment & Drives N e v e r s t o p t h i n k i n g . 2ED020I06-FI Revision History: 2010-04-20 Datasheet Previous Version: Page Subjects (major changes since last revision) For questions on technology, delivery and prices, please contact the Infineon offices in Germany or the Infineon companies and representatives worldwide: See our webpage at http://www.infineon.com/gatedriver Edition 2010-04-20 Published by Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg © Infineon 2007. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2ED020I06-FI Dual IGBT Driver IC 2ED020I06-FI Product Highlights • • • • • • Fully opera tional to ±650V Power supply operating range from 14 to 18 V Gate drive currents of +1 A / –2 A Matched propagation delay for both channels High dV/dt immunity Low power consumption PG-DS O-18-2 Features • • • • • • • • Floating high side driver Undervoltage lockout for both channels 3.3 V and 5 V TTL compatible inputs CMOS Schmitt-triggered inputs with pull-down Non-inverting inputs Interlocking inputs Dedicated shutdown input with pull-up RoHS compliant Type Ordering Code Package 2ED020I06-FI Datasheet PG-DSO-18-2 3 Packaging Tape&Reel April 2010 High and Low Side Driver 2ED020I06-FI Overview 1 Overview The 2ED020I06-FI is a high voltage, high speed power MOSFET and IGBT driver with interlocking high and low side referenced outputs. The floating high side driver may be supplied directly or by means of a bootstrap diode and capacitor. In addition to the logic input of each driver the 2ED020I06-FI is equipped with a dedicated shutdown input. All logic inputs are compatible with 3.3 V and 5 V TTL. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. Both drivers are designed to drive an N-channel power MOSFET or IGBT which operate up to 650V. Datasheet 4 April 2010 High and Low Side Driver 2ED020I06-FI Pin Configuration and Functionality 2 Pin Configuration and Functionality 2.1 Pin Configuration GNDH InL OutH SD VSH 2ED020I06-FI InH GND GND GND GND NC GNDH NC VSL GND OutL GND GNDL P-DSO-18-2 (300mil) Figure 1 2.2 Pin Configuration (top view) Pin Definitions and Functions Pin Symbol Function 1 InH Logic input for high side driver 2 InL Logic input for low side driver 3 SD Logic input for shutdown of both drivers 4 GND Common ground 5 GND Connect to GND 6 GND Connect to GND 7 GND Connect to GND 8 Table 1 Datasheet n.c. Do not connect, Pin must stay open Pin Description 5 April 2010 High and Low Side Driver 2ED020I06-FI Pin Configuration and Functionality Pin Symbol Function 9 GND Connect to GND 10 GND Connect to GND 11 GNDL Low side power ground 1) 12 OutL Low side gate driver output 13 VSL Low side supply voltage 14 n.c. (not connected) 15 n.e. (not existing) 16 n.e. (not existing) 17 GNDH High side (power) ground 18 VSH High side supply voltage 19 OutH High side gate driver output 20 Table 1 1) GNDH High side (power) ground Pin Description (cont’d) Please note : GNDL has to be connected directly to GND Datasheet 6 April 2010 High and Low Side Driver 2ED020I06-FI Block Diagram 3 Block Diagram High Side InH Voltage Supply UVLO HS RX Logic VSH OutH InL GNDH CLT VSL +5V TX SD Input Logic OutL UVLO LS GNDL Voltage Supply GND 2ED020I06-FI Low Side Figure 2 Datasheet Block Diagram 7 April 2010 High and Low Side Driver 2ED020I06-FI Functional Description 4 Functional Description 4.1 Power Supply The power supply of both sides, “VSL” and “VSH”, is monitored by an undervoltage lockout block (UVLO) which enables operation of the corresponding side when the supply voltage reaches the “on” threshold. Afterwards the internal voltage reference and the biasing circuit are enabled. When the supply voltage (VSL, VSH) drops below the “off” threshold, the circuit is disabled. 4.2 Logic Inputs The logic inputs InH, InL and SD are fed into Schmitt-Triggers with thresholds compatible to 3.3V and 5V TTL. When SD is enabled (low), InH and InL are disabled. If InH is high (while InL is low), OutH is enabled and vice versa. However, if both signals are high, they are internally disabled until one of them gets low again. This is due to the interlocking logic of the device. See Figure 3 (section 4.7). 4.3 Gate Driver 2ED020I06-FI features two hard-switching gate drivers with N-channel output stages capable to source 1A and to sink 2A peak current. Both drivers are equipped with active-low-clamping capability. Furthermore, they feature a large ground bounce ruggedness in order to compensate ground bounces caused by a turn-off of the driven IGBT. 4.4 Coreless Transformer (CLT) In order to enable signal transmission across the isolation barrier between low-side and high-side driver, a transformer based on CLT-Technology is employed. Signals, that are to be transmitted, are specially encoded by the transmitter and correspondingly restored by the receiver. In this way EMI due to variations of GNDH (dVGNDH/dt) or the magnetic flux density (dΗ/dt) can be suppresed.To compensate the additional propagation delay of transmitter, level shifter and receiver, a dedicated propagation delay is introduced into the low-side driver. Datasheet 8 April 2010 High and Low Side Driver 2ED020I06-FI Functional Description 4.5 Diagrams InH InL /SD OutH OutL Figure 3 Datasheet Input/Output Timing Diagram 9 April 2010 High and Low Side Driver 2ED020I06-FI Electrical Parameters 5 Electrical Parameters 5.1 Absolute Maximum Ratings Note: Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destruction of the integrated circuit. Unless otherwise noted all parameters refer to GND. Parameter Symbol Limit Values min. max. Unit Remarks High side ground GNDH – 650 650 V High side supply voltage VSH – 0.3 20 V 1) High side gate driver output OutH – 0.3 VSH + 0.3 V 1) Low side ground GNDL – 0.3 5.3 V Low side supply voltage VSL – 0.3 20 V 2) Low side gate driver output OutL – 0.3 VSL + 0.3 V 3) Logic input voltages (InH, InL, SD) VIN – 0.3 5.3 V High side ground, voltage transient dVGNDH /dt – 50 50 V/ns ESD Capability VESD — 2 kV Human Body Model Package power disipation @TA PD = 25°C — 1.4 W 5) Thermal resistance (both chips RTHJA active), junction to ambient — 90 K/W 6) Thermal resistance (high side chip), junction to ambient RTHJA(HS) — 110 K/W 6) Thermal resistance (low side chip), junction to ambient RTHJA(LS) — 110 K/W 6) Junction temperature TJ — 150 °C Storage temperature TS 150 °C – 55 1) With reference to high side ground GNDH. 2) With respect to both GND and GNDL. 3) With respect to GNDL. 4) According to EIA/JESD22-A114-B (discharging a 100pF capacitor through a 1.5kΩ series resistor). 5) Considering Rth(both chips active)=90K/W Datasheet 10 4) April 2010 High and Low Side Driver 2ED020I06-FI Electrical Parameters 6) Device soldered to reference PCB without cooling area 5.2 Operating Range Note: Within the operating range the IC operates as described in the functional description.Unless otherwise noted all parameters refer to GND. Parameter Symbol min. max. High side ground GNDH – 650 650 V High side supply voltage VSH 14 18 V 1) Low side supply voltage VSL 14 18 V 2) Logic input voltages (InH, InL, SD) VIN 0 5 V Junction temperature TJ – 40 105 °C Industrial applications, useful lifetime 87600h Junction temperature TJ – 40 125 °C Other applications, useful lifetime 15000h 1) With reference to high side ground GNDH. 2) With respect to both GND and GNDL. 5.3 Limit Values Unit Remarks Electrical Characteristics Note: The electrical characteristics involve the spread of values for the supply voltages, load and junction temperature given below. Typical values represent the median values, which are related to production processes. Unless otherwise noted all voltages are given with respect to ground (GND). VSL = VSH – GNDH = 15 V, CL = 1 nF, TA = 25 °C. Positive currents are assumed to be flowing into pins. Voltage Supply Parameter Symbol High side leakage current IGNDH Limit Values min. Datasheet — typ 0 11 Unit Test Condition µA GNDH = 1.2 kV GNDL = 0 V max. — April 2010 High and Low Side Driver 2ED020I06-FI Electrical Parameters Voltage Supply (cont’d) Parameter Symbol Limit Values Unit Test Condition 3.2 mA VSH = 15 V1) 2.3 3.2 mA VSH = 15 V1) TJ = 125 °C min. typ max. — 2.4 — High side quiescent supply IVSH current High side undervoltage lockout, upper threshold VVSH1) 10.9 12.2 13.5 V High side undervoltage lockout, lower threshold VVSH1) — 11.2 — V High side undervoltage lockout hysteresis ∆VVSH 0.7 Low side quiescent supply IVSL current — 1 1.3 V 3.9 5.0 mA VSL = 15 V 3.9 5.5 mA VSL = 15 V TJ = 125 °C Low side undervoltage lockout, upper threshold VVSL 10.7 12 13.3 V Low side undervoltage lockout, lower threshold VVSL — 11 — V Low side undervoltage lockout hysteresis ∆VVSL 1) 0.7 1 1.3 V With reference to high side ground GNDH. Logic Inputs Parameter Symbol Limit Values min. typ Test Condition Logic “1” input voltages (InH, InL, SD) VIN Logic “0” input voltages (InH, InL, SD) VIN — — 0.8 V Logic “1” input currents (InH, InL) IIN — 40 55 µA VIN = 5 V Logic “0” input currents (InH, InL) IIN — µA VIN = 0 V Datasheet 2 Unit max. — 0 12 — — V April 2010 High and Low Side Driver 2ED020I06-FI Electrical Parameters Logic Inputs (cont’d) Parameter Symbol Limit Values min. Logic “1” input currents (SD) IIN Logic “0” input currents (SD) IIN — typ 0 –60 Unit Test Condition — µA VIN = 5 V — µA VIN = 0 V Unit Test Condition max. –40 Gate Drivers Parameter Symbol Limit Values min. typ max. High side high level output VVSH – voltage VOutH — 1.4 1.7 V IOutH = –1mA VInH = 5V High side low level output VOutH1) voltage — — 0.1 V IOutH = 1mA VInH = 0V Low side high level output VVSL – voltage VOutL — 1.4 1.7 V IOutL = –1mA VInL = 5V Low side low level output VOutL voltage — — 0.1 V IOutL = 1mA VInL = 0V Output high peak current (OutL, OutH) IOut — — –1 A VIN = 5 V VOut = 0 V Output low peak current (OutL, OutH) IOut High side active low clamping VOutH1) Low side active low clamping 1) VOutL 2 — — A VIN = 0 V VOut = 15 V — 2.6 3 V InH =0V, VSH open IOutH =200mA — 2.7 3.2 V InH =0V, VSH open IOutH =200mA TJ = 125 °C — 2.6 3 V InL =0V, VSL open IOutL =200mA — 2.7 3.2 V InL =0V, VSL open IOutL =200mA TJ = 125 °C With reference to high side ground GNDH. Datasheet 13 April 2010 High and Low Side Driver 2ED020I06-FI Electrical Parameters Dynamic Characteristics Parameter Symbol Limit Values Unit Test Condition 105 ns GNDH = 0 V 20% Vout 95 120 ns GNDH = 0 V 20% Vout TJ = 125 °C — 85 115 ns 80% Vout — 100 130 ns 80% Vout TJ = 125 °C — 85 115 ns 80% Vout — 100 130 ns 80% Vout TJ = 125 °C — 20 40 ns 20% to 80% Vout — 30 50 ns 20% to 80% Vout TJ = 125 °C — 20 35 ns 80% to 20% Vout — 25 40 ns 80% to 20% Vout TJ = 125 °C — 15 25 ns TJ = 25°C see Figure 6 — 15 30 ns TJ = 125°C see Figure 6 — 50 75 ns 1) — 55 80 ns 1) min. Turn-on propagation delay tON Turn-off propagation delay tOFF Shutdown propagation delay tSD Turn-on rise time tr Turn-off fall time Delay mismatch (high & low side turn-on/off) Minimum turn-on input (InH, InL) pulse width Minimum turn-off input (InH, InL) pulse width 1) tf ∆t tpON tpOFF typ max. — 85 — — 50 75 ns 1) — 55 80 ns 1) TJ = 125°C TJ = 125 °C InH-Pulses shorter than the “minimum turn-on(off) input pulse width” are prolonged to 50ns (See Figure 7). InL-Input doesn´t have this feature. Datasheet 14 April 2010 High and Low Side Driver 2ED020I06-FI Package Outline 6 Package Outline Note: dimensions are given in mm. 6.1 Soldering Profile The soldering profile qualified for 2ED020I06-FI (according to the standard IPC/JEDEC J-STD020C) is moisture sensitivity level 3. The peak reflow temperature for its package (volume < 350 mm3) is 260 +0/-5 °C. Datasheet 15 April 2010 High and Low Side Driver 2ED020I06-FI Diagrams 7 Diagrams InH/L 2V 0.8V tr tOFF 80% 80% OutH/L 20% 20% tf tON Figure 4 Switching Time Waveform Definition /SD 0.8V tSD 80% OutH/L Figure 5 Datasheet Shutdown Waveform Definition 16 April 2010 High and Low Side Driver 2ED020I06-FI Diagrams InL 2V 2V 0.8V 0.8V InH OutL 80% 80% 20% 20% OutH tOFFH tOFFL tONH tONL ∆t = max (|tONH - tOFFL| , |tOFFH - tONL|) Figure 6 Delay Matching Waveform Definitions InH OutH 50ns 50ns Figure 7 Datasheet Short InH-Pulses Prolongation 17 April 2010 High and Low Side Driver 2ED020I06-FI Application Advices 8 Application Advices 8.1 Power Supply a) The connection of a capacitor (>10nF) as close as possible to the supply pins VSH, VSL is recommended for avoiding that possible oscillations in the supply voltage can cause erroneous operation of the output driver stage. Total value of capacitance connected to the supply terminals has to be determined by taking into account gatecharge, peak current, supply voltage and kind of power supply. b) If a bootstrap power supply for the high side driver is applied, a resistor of 10Ω minimum in series with the bootstrap diode is required. Datasheet 18 April 2010 High and Low Side Driver 2ED020I06-FI Application Advices Datasheet 19 April 2010 Total Quality Management Qualität hat für uns eine umfassende Bedeutung. Wir wollen allen Ihren Ansprüchen in der bestmöglichen Weise gerecht werden. Es geht uns also nicht nur um die Produktqualität – unsere Anstrengungen gelten gleichermaßen der Lieferqualität und Logistik, dem Service und Support sowie allen sonstigen Beratungs- und Betreuungsleistungen. Dazu gehört eine bestimmte Geisteshaltung unserer Mitarbeiter. Total Quality im Denken und Handeln gegenüber Kollegen, Lieferanten und Ihnen, unserem Kunden. 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