Data Sheet

PHT4NQ10T
TrenchMOS™ standard level FET
M3D087
Rev. 02 — 2 May 2002
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PHT4NQ10T in SOT223.
2. Features
■ TrenchMOS™ technology
■ Very fast switching
■ Surface mount package.
3. Applications
■ Primary side switch in DC to DC converters
■ High speed line driver
■ Fast general purpose switch.
4. Pinning information
Table 1:
Pinning - SOT223, simplified outline and symbol
Pin
Description
1
gate (g)
2
drain (d)
3
source (g)
4
drain (d)
Simplified outline
Symbol
d
4
g
1
Top view
2
3
MSB002 - 1
SOT223
MBB076
s
PHT4NQ10T
Philips Semiconductors
TrenchMOS™ standard level FET
5. Quick reference data
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
25 °C ≤ Tj ≤ 150 °C
-
100
V
ID
drain current (DC)
Tsp = 25 °C; VGS = 10 V
-
3.5
A
Tsp = 25 °C
-
6.9
W
-
150
°C
Tj = 25 °C
200
250
mΩ
Tj = 150 °C
-
575
mΩ
Ptot
total power dissipation
Tj
junction temperature
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 1.75 A
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
25 °C ≤ Tj ≤ 150 °C
-
100
V
VDGR
drain-gate voltage (DC)
25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ
-
100
V
VGS
gate-source voltage (DC)
-
±20
V
ID
drain current (DC)
Tsp = 25 °C; VGS = 10 V;
Figure 2 and 3
-
3.5
A
Tsp = 100 °C; VGS = 10 V; Figure 2
-
2.2
A
IDM
peak drain current
Tsp = 25 °C; pulsed; tp ≤ 10 µs;
Figure 3
-
14
A
Tsp = 25 °C; Figure 1
Ptot
total power dissipation
-
6.9
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tsp = 25 °C
-
3.5
A
ISM
peak source (diode forward) current
Tsp = 25 °C; pulsed; tp ≤ 10 µs
-
14
A
-
45
mJ
-
3.5
A
Avalanche ruggedness
EDS(AL)S
IDS(AL)SM
non-repetitive drain-source avalanche unclamped inductive load; ID = 3.5 A;
energy
tp = 0.2 ms; VDD ≤ 15 V; RGS = 50 Ω;
VGS = 10 V; starting Tj = 25 °C;
peak non-repetitive drain-source
Figure 4
avalanche current
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09581
Product data
Rev. 02 — 2 May 2002
2 of 12
PHT4NQ10T
Philips Semiconductors
TrenchMOS™ standard level FET
03aa17
120
03aa25
120
Pder
I der
(%)
(%)
80
80
40
40
0
0
0
50
100
200
150
0
50
150
100
Tsp (°C)
200
Tsp (°C)
VGS ≥ 10 V
P tot
P der = ---------------------- × 100%
P
°
ID
I der = ------------------- × 100%
I
°
tot ( 25 C )
D ( 25 C )
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
03aa88
102
IAS
(A)
tp = 10 µs
10
03aa97
10
Limit RDSon = VDS/ID
ID
(A)
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
100 µs
25 °C
1
1
1 ms
DC
10 ms
100 ms
10-1
Tj prior to avalanche = 125 °C
10-2
1
10
102
103
10-1
10-2
VDS (V)
10
1
tp (ms)
Tsp = 25 °C; IDM is single pulse.
Unclamped inductive load; VDD ≤ 15 V; RGS = 50 Ω;
VGS = 10 V; starting Tj = 25 °C and 125 °C.
Fig 3. Safe operating area; continuous and peak drain
currents as a function of drain-source voltage.
Fig 4. Non-repetitive avalanche ruggedness current
as a function of pulse duration.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09581
Product data
10-1
Rev. 02 — 2 May 2002
3 of 12
PHT4NQ10T
Philips Semiconductors
TrenchMOS™ standard level FET
7. Thermal characteristics
Table 4:
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-sp)
thermal resistance from junction to solder
point
mounted on a metal clad substrate; Figure 5
Rth(j-a)
thermal resistance from junction to ambient mounted on a printed circuit board; minimum footprint
Min
Typ
Max
Unit
-
18
K/W
150
-
K/W
7.1 Transient thermal impedance
03aa87
102
Zth(j-sp)
(K/W)
10
δ = 0.5
0.2
0.1
1
0.05
0.02
δ=
P
tp
T
10-1
single pulse
t
tp
T
10-2
10-5
10-4
10-3
10-2
10-1
1
10
tp (s)
Mounted on a metal clad substrate.
Fig 5. Transient thermal impedance from junction to solder point as a function of pulse duration.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09581
Product data
Rev. 02 — 2 May 2002
4 of 12
PHT4NQ10T
Philips Semiconductors
TrenchMOS™ standard level FET
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown
voltage
ID = 250 µA; VGS = 0 V
Tj = 25 °C
100
130
-
V
Tj = −55 °C
89
-
-
V
2
3
4
V
Tj = 150 °C; Figure 10
1.2
-
-
V
Tj = −55 °C; Figure 10
-
-
6
V
Tj = 25 °C
-
1
25
µA
Tj = 150 °C
-
4
250
µA
-
-
1
µA
-
10
100
nA
Tj = 25 °C; Figure 8 and 9
-
200
250
mΩ
Tj = 150 °C; Figure 9
-
-
575
mΩ
gate-source threshold voltage ID = 1 mA; VDS = VGS
Tj = 25 °C; Figure 10
IDSS
drain-source leakage current
VDS = 100 V; VGS = 0 V
VDS = 60 V; VGS = 0 V
Tj = 85 °C
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0 V
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 1.75 A
Dynamic characteristics
gfs
forward transconductance
VDS = 5 V; ID = 3.5 A;
Figure 12
-
4.2
Qg(tot)
total gate charge
-
7.4
-
nC
Qgs
gate-source charge
ID = 3.5 A; VDS = 80 V;
VGS = 10 V; Figure 15
-
1.5
-
nC
Qgd
gate-drain (Miller) charge
-
3.3
-
nC
Ciss
input capacitance
-
300
-
pF
Coss
output capacitance
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 13
-
44
-
pF
Crss
reverse transfer capacitance
-
21
-
pF
td(on)
turn-on delay time
-
8
-
ns
tr
rise time
-
13
-
ns
td(off)
turn-off delay time
-
20
-
ns
tf
fall time
-
11
-
ns
VDD = 50 V; RD = 15 Ω;
VGS = 10 V; RG = 6 Ω
S
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 3.5 A; VGS = 0 V;
Figure 14
-
0.87
1.5
V
trr
reverse recovery time
-
50
-
ns
Qr
recovered charge
IS = 3.5 A;
dIS/dt = −100 A/µs;
VGS = 0 V; VDS = 30 V
-
100
-
nC
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09581
Product data
Rev. 02 — 2 May 2002
5 of 12
PHT4NQ10T
Philips Semiconductors
TrenchMOS™ standard level FET
03aa90
10
03aa92
10
Tj = 25 °C
ID
ID
VGS = 10 V
(A)
VDS > ID X RDSon
(A)
8
8
6V
6
6
5.5 V
Tj = 25 °C
4
4
150 °C
5V
4.8 V
2
2
4.6 V
4.2 V
0
0
0.4
0.8
0
2
1.6
1.2
0
2
4
6
8
VGS (V)
VDS (V)
Tj = 25 °C
Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03aa91
1
03aa29
3
RDSon 4.4 V 4.8 V
(Ω)
a
2.5
0.8
5V
2
0.6
1.5
5.5 V
0.4
1
6V
VGS = 10 V
0.2
0.5
Tj = 25 °C
0
0
0
2
4
6
8
10
-60
ID (A)
60
120
180
o
Tj ( C)
Tj = 25 °C
R DSon
a = --------------------------R DSon ( 25 °C )
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 9. Normalized drain-source on-state resistance
factor as a function of junction temperature.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09581
Product data
0
Rev. 02 — 2 May 2002
6 of 12
PHT4NQ10T
Philips Semiconductors
TrenchMOS™ standard level FET
03aa32
03aa35
10-1
5
ID
(A)
VGS(th)
(V)
4
max
10-2
3
typ
10-3
2
min
10-4
1
10-5
0
10-6
-60
0
60
120
o
Tj ( C)
180
0
2
typ
max
4
6
VGS (V)
Tj = 25 °C; VDS = 5 V
ID = 1 mA; VDS = VGS
Fig 10. Gate-source threshold voltage as a function of
junction temperature.
03aa93
VDS > ID X RDSon
Tj = 25 °C
(S)
Fig 11. Sub-threshold drain current as a function of
gate-source voltage.
03aa95
103
5
gfs
min
C
(pF)
4
Ciss
150 °C
3
102
2
Coss
Crss
1
0
10
0
2
4
6
8
10
10-1
ID (A)
102
10
VDS (V)
Tj = 25 °C and 150 °C; VDS > ID × RDSon
VGS = 0 V; f = 1 MHz
Fig 12. Forward transconductance as a function of
drain current; typical values.
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09581
Product data
1
Rev. 02 — 2 May 2002
7 of 12
PHT4NQ10T
Philips Semiconductors
TrenchMOS™ standard level FET
03aa94
10
03aa96
15
IS
(A)
VDS = 20 V
ID = 3.5 A
VGS
(V)
Tj = 25 °C
8
10
6
VDS = 80 V
Tj = 150 °C
4
5
25 °C
2
0
0
0
0.2
0.4
0.6
0.8
1
1.2
0
4
VSD (V)
Tj = 25 °C and 150 °C; VGS = 0 V
QG (nC)
12
ID = 3.5 A; VDS = 80 V
Fig 14. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 15. Gate-source voltage as a function of gate
charge; typical values.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09581
Product data
8
Rev. 02 — 2 May 2002
8 of 12
PHT4NQ10T
Philips Semiconductors
TrenchMOS™ standard level FET
9. Package outline
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
3
Lp
bp
e1
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
SOT223
REFERENCES
IEC
JEDEC
EIAJ
SC-73
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
Fig 16. SOT223.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09581
Product data
Rev. 02 — 2 May 2002
9 of 12
PHT4NQ10T
Philips Semiconductors
TrenchMOS™ standard level FET
10. Revision history
Table 6:
Revision history
Rev Date
02
20020502
CPCN
Description
-
Product data (9397 750 09581)
Modifications:
•
01
20000731
-
Additional IDSS data added.
Product specification; initial version.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09581
Product data
Rev. 02 — 2 May 2002
10 of 12
PHT4NQ10T
Philips Semiconductors
TrenchMOS™ standard level FET
11. Data sheet status
Data sheet status[1]
Product status[2]
Definition
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
14. Trademarks
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: [email protected]
Product data
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09581
Rev. 02 — 2 May 2002
11 of 12
Philips Semiconductors
PHT4NQ10T
TrenchMOS™ standard level FET
Contents
1
2
3
4
5
6
7
7.1
8
9
10
11
12
13
14
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
© Koninklijke Philips Electronics N.V. 2002.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 2 May 2002
Document order number: 9397 750 09581
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