PHT4NQ10T TrenchMOS™ standard level FET M3D087 Rev. 02 — 2 May 2002 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHT4NQ10T in SOT223. 2. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Surface mount package. 3. Applications ■ Primary side switch in DC to DC converters ■ High speed line driver ■ Fast general purpose switch. 4. Pinning information Table 1: Pinning - SOT223, simplified outline and symbol Pin Description 1 gate (g) 2 drain (d) 3 source (g) 4 drain (d) Simplified outline Symbol d 4 g 1 Top view 2 3 MSB002 - 1 SOT223 MBB076 s PHT4NQ10T Philips Semiconductors TrenchMOS™ standard level FET 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) 25 °C ≤ Tj ≤ 150 °C - 100 V ID drain current (DC) Tsp = 25 °C; VGS = 10 V - 3.5 A Tsp = 25 °C - 6.9 W - 150 °C Tj = 25 °C 200 250 mΩ Tj = 150 °C - 575 mΩ Ptot total power dissipation Tj junction temperature RDSon drain-source on-state resistance VGS = 10 V; ID = 1.75 A 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C ≤ Tj ≤ 150 °C - 100 V VDGR drain-gate voltage (DC) 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ - 100 V VGS gate-source voltage (DC) - ±20 V ID drain current (DC) Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 - 3.5 A Tsp = 100 °C; VGS = 10 V; Figure 2 - 2.2 A IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 - 14 A Tsp = 25 °C; Figure 1 Ptot total power dissipation - 6.9 W Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C Source-drain diode IS source (diode forward) current (DC) Tsp = 25 °C - 3.5 A ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs - 14 A - 45 mJ - 3.5 A Avalanche ruggedness EDS(AL)S IDS(AL)SM non-repetitive drain-source avalanche unclamped inductive load; ID = 3.5 A; energy tp = 0.2 ms; VDD ≤ 15 V; RGS = 50 Ω; VGS = 10 V; starting Tj = 25 °C; peak non-repetitive drain-source Figure 4 avalanche current © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09581 Product data Rev. 02 — 2 May 2002 2 of 12 PHT4NQ10T Philips Semiconductors TrenchMOS™ standard level FET 03aa17 120 03aa25 120 Pder I der (%) (%) 80 80 40 40 0 0 0 50 100 200 150 0 50 150 100 Tsp (°C) 200 Tsp (°C) VGS ≥ 10 V P tot P der = ---------------------- × 100% P ° ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of solder point temperature. 03aa88 102 IAS (A) tp = 10 µs 10 03aa97 10 Limit RDSon = VDS/ID ID (A) Fig 2. Normalized continuous drain current as a function of solder point temperature. 100 µs 25 °C 1 1 1 ms DC 10 ms 100 ms 10-1 Tj prior to avalanche = 125 °C 10-2 1 10 102 103 10-1 10-2 VDS (V) 10 1 tp (ms) Tsp = 25 °C; IDM is single pulse. Unclamped inductive load; VDD ≤ 15 V; RGS = 50 Ω; VGS = 10 V; starting Tj = 25 °C and 125 °C. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. Fig 4. Non-repetitive avalanche ruggedness current as a function of pulse duration. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09581 Product data 10-1 Rev. 02 — 2 May 2002 3 of 12 PHT4NQ10T Philips Semiconductors TrenchMOS™ standard level FET 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Rth(j-sp) thermal resistance from junction to solder point mounted on a metal clad substrate; Figure 5 Rth(j-a) thermal resistance from junction to ambient mounted on a printed circuit board; minimum footprint Min Typ Max Unit - 18 K/W 150 - K/W 7.1 Transient thermal impedance 03aa87 102 Zth(j-sp) (K/W) 10 δ = 0.5 0.2 0.1 1 0.05 0.02 δ= P tp T 10-1 single pulse t tp T 10-2 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) Mounted on a metal clad substrate. Fig 5. Transient thermal impedance from junction to solder point as a function of pulse duration. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09581 Product data Rev. 02 — 2 May 2002 4 of 12 PHT4NQ10T Philips Semiconductors TrenchMOS™ standard level FET 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS VGS(th) drain-source breakdown voltage ID = 250 µA; VGS = 0 V Tj = 25 °C 100 130 - V Tj = −55 °C 89 - - V 2 3 4 V Tj = 150 °C; Figure 10 1.2 - - V Tj = −55 °C; Figure 10 - - 6 V Tj = 25 °C - 1 25 µA Tj = 150 °C - 4 250 µA - - 1 µA - 10 100 nA Tj = 25 °C; Figure 8 and 9 - 200 250 mΩ Tj = 150 °C; Figure 9 - - 575 mΩ gate-source threshold voltage ID = 1 mA; VDS = VGS Tj = 25 °C; Figure 10 IDSS drain-source leakage current VDS = 100 V; VGS = 0 V VDS = 60 V; VGS = 0 V Tj = 85 °C IGSS gate-source leakage current VGS = ±20 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 10 V; ID = 1.75 A Dynamic characteristics gfs forward transconductance VDS = 5 V; ID = 3.5 A; Figure 12 - 4.2 Qg(tot) total gate charge - 7.4 - nC Qgs gate-source charge ID = 3.5 A; VDS = 80 V; VGS = 10 V; Figure 15 - 1.5 - nC Qgd gate-drain (Miller) charge - 3.3 - nC Ciss input capacitance - 300 - pF Coss output capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 13 - 44 - pF Crss reverse transfer capacitance - 21 - pF td(on) turn-on delay time - 8 - ns tr rise time - 13 - ns td(off) turn-off delay time - 20 - ns tf fall time - 11 - ns VDD = 50 V; RD = 15 Ω; VGS = 10 V; RG = 6 Ω S Source-drain diode VSD source-drain (diode forward) voltage IS = 3.5 A; VGS = 0 V; Figure 14 - 0.87 1.5 V trr reverse recovery time - 50 - ns Qr recovered charge IS = 3.5 A; dIS/dt = −100 A/µs; VGS = 0 V; VDS = 30 V - 100 - nC © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09581 Product data Rev. 02 — 2 May 2002 5 of 12 PHT4NQ10T Philips Semiconductors TrenchMOS™ standard level FET 03aa90 10 03aa92 10 Tj = 25 °C ID ID VGS = 10 V (A) VDS > ID X RDSon (A) 8 8 6V 6 6 5.5 V Tj = 25 °C 4 4 150 °C 5V 4.8 V 2 2 4.6 V 4.2 V 0 0 0.4 0.8 0 2 1.6 1.2 0 2 4 6 8 VGS (V) VDS (V) Tj = 25 °C Tj = 25 °C and 150 °C; VDS > ID × RDSon Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 03aa91 1 03aa29 3 RDSon 4.4 V 4.8 V (Ω) a 2.5 0.8 5V 2 0.6 1.5 5.5 V 0.4 1 6V VGS = 10 V 0.2 0.5 Tj = 25 °C 0 0 0 2 4 6 8 10 -60 ID (A) 60 120 180 o Tj ( C) Tj = 25 °C R DSon a = --------------------------R DSon ( 25 °C ) Fig 8. Drain-source on-state resistance as a function of drain current; typical values. Fig 9. Normalized drain-source on-state resistance factor as a function of junction temperature. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09581 Product data 0 Rev. 02 — 2 May 2002 6 of 12 PHT4NQ10T Philips Semiconductors TrenchMOS™ standard level FET 03aa32 03aa35 10-1 5 ID (A) VGS(th) (V) 4 max 10-2 3 typ 10-3 2 min 10-4 1 10-5 0 10-6 -60 0 60 120 o Tj ( C) 180 0 2 typ max 4 6 VGS (V) Tj = 25 °C; VDS = 5 V ID = 1 mA; VDS = VGS Fig 10. Gate-source threshold voltage as a function of junction temperature. 03aa93 VDS > ID X RDSon Tj = 25 °C (S) Fig 11. Sub-threshold drain current as a function of gate-source voltage. 03aa95 103 5 gfs min C (pF) 4 Ciss 150 °C 3 102 2 Coss Crss 1 0 10 0 2 4 6 8 10 10-1 ID (A) 102 10 VDS (V) Tj = 25 °C and 150 °C; VDS > ID × RDSon VGS = 0 V; f = 1 MHz Fig 12. Forward transconductance as a function of drain current; typical values. Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09581 Product data 1 Rev. 02 — 2 May 2002 7 of 12 PHT4NQ10T Philips Semiconductors TrenchMOS™ standard level FET 03aa94 10 03aa96 15 IS (A) VDS = 20 V ID = 3.5 A VGS (V) Tj = 25 °C 8 10 6 VDS = 80 V Tj = 150 °C 4 5 25 °C 2 0 0 0 0.2 0.4 0.6 0.8 1 1.2 0 4 VSD (V) Tj = 25 °C and 150 °C; VGS = 0 V QG (nC) 12 ID = 3.5 A; VDS = 80 V Fig 14. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 15. Gate-source voltage as a function of gate charge; typical values. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09581 Product data 8 Rev. 02 — 2 May 2002 8 of 12 PHT4NQ10T Philips Semiconductors TrenchMOS™ standard level FET 9. Package outline Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION SOT223 REFERENCES IEC JEDEC EIAJ SC-73 EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 Fig 16. SOT223. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09581 Product data Rev. 02 — 2 May 2002 9 of 12 PHT4NQ10T Philips Semiconductors TrenchMOS™ standard level FET 10. Revision history Table 6: Revision history Rev Date 02 20020502 CPCN Description - Product data (9397 750 09581) Modifications: • 01 20000731 - Additional IDSS data added. Product specification; initial version. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09581 Product data Rev. 02 — 2 May 2002 10 of 12 PHT4NQ10T Philips Semiconductors TrenchMOS™ standard level FET 11. Data sheet status Data sheet status[1] Product status[2] Definition Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. [1] [2] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 12. Definitions 13. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Trademarks TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: [email protected]. Product data Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09581 Rev. 02 — 2 May 2002 11 of 12 Philips Semiconductors PHT4NQ10T TrenchMOS™ standard level FET Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2002. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 2 May 2002 Document order number: 9397 750 09581