IGBT Highspeed5IGBTinTRENCHSTOPTM5technology IGW75N65H5 650VIGBThighspeedseriesfifthgeneration Datasheet IndustrialPowerControl IGW75N65H5 Highspeedseriesfifthgeneration Highspeed5IGBTinTRENCHSTOPTM5technology FeaturesandBenefits: C HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowQG •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: •Uninterruptiblepowersupplies •Solarconverters •Weldingconverters •Midtohighrangeswitchingfrequencyconverters Packagepindefinition: 1 •Pin1-gate •Pin2&backside-collector •Pin3-emitter 2 3 KeyPerformanceandPackageParameters Type IGW75N65H5 VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 650V 75A 1.65V 175°C G75EH5 PG-TO247-3 2 Rev.2.1,2015-05-20 IGW75N65H5 Highspeedseriesfifthgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 3 Rev.2.1,2015-05-20 IGW75N65H5 Highspeedseriesfifthgeneration MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 650 V DCcollectorcurrent,limitedbyTvjmax TC=25°Cvaluelimitedbybondwire TC=100°C IC 120.0 75.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax1) ICpuls 300.0 A Turn off safe operating area VCE≤650V,Tvj≤175°C,tp=1µs1) - 300.0 A Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20 ±30 V PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 395.0 198.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.38 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 650 - - Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=75.0A Tvj=25°C Tvj=125°C Tvj=175°C - 1.65 1.85 1.95 2.10 - Gate-emitter threshold voltage VGE(th) IC=0.75mA,VCE=VGE 3.2 4.0 4.8 V Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25°C Tvj=175°C - 0.2 800.0 75.0 - µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=75.0A - 104.0 - S StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 1) V V Defined by design. Not subject to production test. 4 Rev.2.1,2015-05-20 IGW75N65H5 Highspeedseriesfifthgeneration ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 3800 - - 80 - - 17 - - 160.0 - nC - 13.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=520V,IC=75.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. Tvj=25°C, VCC=400V,IC=75.0A, VGE=0.0/15.0V, RG(on)=8.0Ω,RG(off)=8.0Ω, Lσ=30nH,Cσ=25pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Diode from IKW75N65EH5. - 28 - ns - 33 - ns - 174 - ns - 41 - ns - 2.25 - mJ - 0.95 - mJ - 3.20 - mJ Tvj=25°C, VCC=400V,IC=37.5A, VGE=0.0/15.0V, RG(on)=8.0Ω,RG(off)=8.0Ω, Lσ=30nH,Cσ=25pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Diode from IKW75N65EH5. - 25 - ns - 14 - ns - 178 - ns - 18 - ns - 0.90 - mJ - 0.30 - mJ - 1.20 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets 5 Rev.2.1,2015-05-20 IGW75N65H5 Highspeedseriesfifthgeneration SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. Tvj=150°C, VCC=400V,IC=75.0A, VGE=0.0/15.0V, RG(on)=8.0Ω,RG(off)=8.0Ω, Lσ=30nH,Cσ=25pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Diode from IKW75N65EH5. - 27 - ns - 34 - ns - 194 - ns - 38 - ns - 3.00 - mJ - 1.00 - mJ - 4.00 - mJ Tvj=150°C, VCC=400V,IC=37.5A, VGE=0.0/15.0V, RG(on)=8.0Ω,RG(off)=8.0Ω, Lσ=30nH,Cσ=25pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Diode from IKW75N65EH5. - 25 - ns - 16 - ns - 207 - ns - 14 - ns - 1.80 - mJ - 0.40 - mJ - 2.20 - mJ IGBTCharacteristic,atTvj=150°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets 6 Rev.2.1,2015-05-20 IGW75N65H5 Highspeedseriesfifthgeneration 400 350 Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] 100 10 1 300 250 200 150 100 50 not for linear use 0.1 1 10 100 0 1000 25 50 VCE,COLLECTOR-EMITTERVOLTAGE[V] 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 1. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tvj≤175°C,VGE=15V,tp=1µs, ICmaxdefinedbydesign-notsubjectto production test) Figure 2. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) 120 300 VGE = 20V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 100 80 60 40 270 18V 240 15V 12V 210 10V 180 8V 7V 150 6V 120 4V 90 60 20 30 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) Figure 4. Typicaloutputcharacteristic (Tvj=25°C) 7 Rev.2.1,2015-05-20 IGW75N65H5 Highspeedseriesfifthgeneration 300 300 270 17V 270 240 15V 240 12V 210 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] VGE = 19V 10V 180 7V 7V 150 6V 120 5V 90 210 180 150 120 90 60 60 30 30 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5.0 Tvj = 25°C Tvj = 150°C 3 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=150°C) 5 6 7 8 9 10 Figure 6. Typicaltransfercharacteristic (VCE=20V) 3.5 1000 IC = 37.5A IC = 75A IC = 150A 3.0 t,SWITCHINGTIMES[ns] VCEsat,COLLECTOR-EMITTERSATURATION[V] 4 VGE,GATE-EMITTERVOLTAGE[V] 2.5 2.0 1.5 100 10 1.0 0.5 td(off) tf td(on) tr 25 50 75 100 125 150 1 175 Tvj,JUNCTIONTEMPERATURE[°C] 0 25 50 75 100 125 150 175 200 225 IC,COLLECTORCURRENT[A] Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof afunctionofjunctiontemperature collectorcurrent (VGE=15V) (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,RG(on)=8Ω,RG(off)=8Ω,dynamic test circuit in Figure E) 8 Rev.2.1,2015-05-20 IGW75N65H5 Highspeedseriesfifthgeneration 1000 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 1000 100 100 10 td(off) tf td(on) tr 10 5 15 25 35 45 55 65 75 1 85 25 RG,GATERESISTANCE[Ω] Figure 9. Typicalswitchingtimesasafunctionofgate resistance (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,IC=75A,dynamictestcircuitin Figure E) 100 125 150 175 20 typ. min. max. 5.5 Eoff Eon Ets 18 E,SWITCHINGENERGYLOSSES[mJ] VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] 75 Figure 10. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=75A,RG(on)=8Ω,RG(off)=8Ω,dynamictest circuit in Figure E) 6.0 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 50 Tvj,JUNCTIONTEMPERATURE[°C] 16 14 12 10 8 6 4 2 25 50 75 100 125 0 150 Tvj,JUNCTIONTEMPERATURE[°C] 0 25 50 75 100 125 150 175 200 225 IC,COLLECTORCURRENT[A] Figure 11. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.75mA) 9 Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,RG(on)=8Ω,RG(off)=8Ω,dynamic test circuit in Figure E) Rev.2.1,2015-05-20 IGW75N65H5 Highspeedseriesfifthgeneration 15 5.0 Eoff Eon Ets 14 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 13 12 11 10 9 8 7 6 5 4 3 2 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 1 0 Eoff Eon Ets 4.5 5 15 25 35 45 55 65 75 0.0 85 25 RG,GATERESISTANCE[Ω] Figure 13. Typicalswitchingenergylossesasa functionofgateresistance (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,IC=75A,dynamictestcircuitin Figure E) 100 125 150 175 16 Eoff Eon Ets VCE = 130V VCE = 520V 14 4.5 VGE,GATE-EMITTERVOLTAGE[V] E,SWITCHINGENERGYLOSSES[mJ] 75 Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=75A,RG(on)=8Ω,RG(off)=8Ω,dynamictest circuit in Figure E) 5.5 5.0 50 Tvj,JUNCTIONTEMPERATURE[°C] 4.0 3.5 3.0 2.5 2.0 1.5 12 10 8 6 4 1.0 2 0.5 0.0 200 250 300 350 400 450 0 500 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=150°C,VGE=0/15V, IC=75A,RG(on)=8Ω,RG(off)=8Ω,dynamictest circuit in Figure E) 0 20 40 60 80 100 120 140 160 180 QG,GATECHARGE[nC] Figure 16. Typicalgatecharge (IC=75A) 10 Rev.2.1,2015-05-20 IGW75N65H5 Highspeedseriesfifthgeneration C,CAPACITANCE[pF] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] Cies Coes Cres 1E+4 1000 100 10 0 5 10 15 20 25 D = 0.5 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 5 6 ri[K/W]: 0.010336 0.078242 0.081139 0.196217 0.015938 1.8E-3 τi[s]: 2.8E-5 2.3E-4 2.3E-3 0.013145 0.113481 1.869237 0.001 1E-6 30 VCE,COLLECTOR-EMITTERVOLTAGE[V] 0.2 1E-5 1E-4 0.001 0.01 0.1 tp,PULSEWIDTH[s] Figure 17. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) Figure 18. IGBTtransientthermalimpedance (D=tp/T) 11 Rev.2.1,2015-05-20 IGW75N65H5 Highspeedseriesfifthgeneration Package Drawing PG-TO247-3 12 Rev.2.1,2015-05-20 IGW75N65H5 Highspeedseriesfifthgeneration Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. 13 Rev.2.1,2015-05-20 IGW75N65H5 Highspeedseriesfifthgeneration RevisionHistory IGW75N65H5 Revision:2015-05-20,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2015-05-20 Final data sheet WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:[email protected] Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. 14 Rev.2.1,2015-05-20