IGBT Highspeed5IGBTinTRENCHSTOPTM5technology IGZ75N65H5 650VIGBThighspeedseriesfifthgeneration Datasheet IndustrialPowerControl IGZ75N65H5 Highspeedseriesfifthgeneration Highspeed5IGBTinTRENCHSTOPTM5technology FeaturesandBenefits: HighspeedH5technologyoffering •UltralowlossswitchingthankstoKelvinemitterpinin combinationwithTRENCHSTOPTM5 •Best-in-classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ Applications •Uninterruptiblepowersupplies •Weldingconverters •Midtohighrangeswitchingfrequencyconverters •Solarstringinverters Packagepindefinition: •PinC&backside-collector •PinE-emitter •PinK-Kelvinemitter •PinG-gate Pleasenote:TheemitterandKelvinemitterpinsarenot exchangeable.Theirexchangemightleadtomalfunction. KeyPerformanceandPackageParameters Type IGZ75N65H5 VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 650V 75A 1.65V 175°C G75EH5 PG-TO247-4 2 Rev.2.1,2014-10-31 IGZ75N65H5 Highspeedseriesfifthgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 3 Rev.2.1,2014-10-31 IGZ75N65H5 Highspeedseriesfifthgeneration MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 650 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 119.0 75.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax1) ICpuls 300.0 A Turn off safe operating area VCE≤650V,Tvj≤175°C,tp=1µs1) - 300.0 A Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20 ±30 V PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 395.0 197.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.38 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 650 - - Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=75.0A Tvj=25°C Tvj=100°C Tvj=150°C - 1.65 1.82 1.90 2.10 - Gate-emitter threshold voltage VGE(th) IC=0.75mA,VCE=VGE 3.2 4.0 4.8 V Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25°C Tvj=175°C - 850.0 75.0 - µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=75.0A - 104.0 - S StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 1) V V Defined by design. Not subject to production test. 4 Rev.2.1,2014-10-31 IGZ75N65H5 Highspeedseriesfifthgeneration ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 4300 - - 75 - - 16 - - 166.0 - nC - 13.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance1) measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=520V,IC=75.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 26 - ns - 11 - ns - 347 - ns - 15 - ns - 0.68 - mJ - 0.43 - mJ - 1.11 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=400V,IC=37.5A, VGE=0.0/15.0V, RG(on)=10.0Ω,RG(off)=18.0Ω, Lσ=30nH,Cσ=25pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Diode from IKZ75N65EH5. SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 24 - ns - 13 - ns - 400 - ns - 15 - ns - 1.10 - mJ - 0.48 - mJ - 1.58 - mJ IGBTCharacteristic,atTvj=150°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets 1) Tvj=150°C, VCC=400V,IC=37.5A, VGE=0.0/15.0V, RG(on)=10.0Ω,RG(off)=18.0Ω, Lσ=30nH,Cσ=25pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Diode from IKZ75N65EH5. The internal emitter inductance does not affect the gate control circuitry if bypassed by using the emitter sense pin. 5 Rev.2.1,2014-10-31 IGZ75N65H5 Highspeedseriesfifthgeneration 400 350 Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] 100 10 1 300 250 200 150 100 50 not for linear use 0.1 1 10 100 0 1000 25 50 VCE,COLLECTOR-EMITTERVOLTAGE[V] 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 1. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tvj≤175°C,VGE=15V,tp=1µs, ICmaxdefinedbydesign-notsubjectto production test) Figure 2. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) 120 300 VGE = 19V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 100 80 60 40 270 18V 240 15V 14V 210 11V 180 9V 8V 150 7V 120 5V 90 60 20 30 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) Figure 4. Typicaloutputcharacteristic (Tvj=25°C) 6 Rev.2.1,2014-10-31 IGZ75N65H5 Highspeedseriesfifthgeneration 300 300 270 17V 270 240 15V 240 11V 210 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] VGE=19V 9V 180 8V 150 120 90 210 180 150 120 90 60 60 30 30 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5.0 Tvj = 25°C Tvj = 175°C 3 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=175°C) 5 6 7 8 9 10 Figure 6. Typicaltransfercharacteristic (VCE=20V) 2.50 1000 IC = 20A IC = 37.5A IC = 75A 2.25 2.00 t,SWITCHINGTIMES[ns] VCEsat,COLLECTOR-EMITTERSATURATION[V] 4 VGE,GATE-EMITTERVOLTAGE[V] 1.75 1.50 1.25 100 10 1.00 td(off) tf td(on) tr 0.75 0.50 25 50 75 100 125 150 1 175 Tvj,JUNCTIONTEMPERATURE[°C] 0 25 50 75 100 125 150 175 200 225 IC,COLLECTORCURRENT[A] Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof afunctionofjunctiontemperature collectorcurrent (VGE=15V) (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,RG(on)=10Ω,RG(off)=18Ω,dynamic test circuit in Figure E) 7 Rev.2.1,2014-10-31 IGZ75N65H5 Highspeedseriesfifthgeneration 1000 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 1000 100 10 100 10 td(off) tf td(on) tr 1 0 10 20 30 40 1 50 25 RG,GATERESISTANCE[Ω] Figure 9. Typicalswitchingtimesasafunctionofgate resistance (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,IC=37.5A,dynamictestcircuitin Figure E) 100 125 150 175 9 typ. min. max. 5.5 Eoff Eon Ets 8 E,SWITCHINGENERGYLOSSES[mJ] VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] 75 Figure 10. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=37.5A,RG(on)=10Ω,RG(off)=18Ω,dynamic test circuit in Figure E) 6.0 5.0 4.5 4.0 3.5 3.0 2.5 2.0 7 6 5 4 3 2 1 1.5 1.0 50 Tvj,JUNCTIONTEMPERATURE[°C] 25 50 75 100 125 0 150 Tvj,JUNCTIONTEMPERATURE[°C] 0 25 50 75 100 125 150 175 200 225 IC,COLLECTORCURRENT[A] Figure 11. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.75mA) 8 Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,RG(on)=10Ω,RG(off)=18Ω, dynamic test circuit in Figure E) Rev.2.1,2014-10-31 IGZ75N65H5 Highspeedseriesfifthgeneration 3.5 1.8 Eoff Eon Ets 1.6 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 3.0 2.5 2.0 1.5 1.0 0.5 0.0 Eoff Eon Ets 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10 20 30 40 0.0 50 25 RG,GATERESISTANCE[Ω] Figure 13. Typicalswitchingenergylossesasa functionofgateresistance (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,IC=37.5A,dynamictestcircuitin Figure E) 125 150 175 VCE = 130V VCE = 520V 14 VGE,GATE-EMITTERVOLTAGE[V] E,SWITCHINGENERGYLOSSES[mJ] 100 16 Eoff Eon Ets 1.25 1.00 0.75 0.50 0.25 0.00 200 75 Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=37.5A,RG(on)=10Ω,RG(off)=18Ω,dynamic test circuit in Figure E) 1.75 1.50 50 Tvj,JUNCTIONTEMPERATURE[°C] 12 10 8 6 4 2 250 300 350 0 400 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=150°C,VGE=0/15V, IC=37.5A,RG(on)=10Ω,RG(off)=18Ω,dynamic test circuit in Figure E) 0 20 40 60 80 100 120 140 160 180 QG,GATECHARGE[nC] Figure 16. Typicalgatecharge (IC=75A) 9 Rev.2.1,2014-10-31 IGZ75N65H5 Highspeedseriesfifthgeneration C,CAPACITANCE[pF] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] Cies Coes Cres 1E+4 1000 100 10 0 5 10 15 20 25 D = 0.5 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 5 6 ri[K/W]: 0.010336 0.078242 0.081139 0.196217 0.015938 1.8E-3 τi[s]: 2.8E-5 2.3E-4 2.3E-3 0.013145 0.113481 1.869237 0.001 1E-6 30 VCE,COLLECTOR-EMITTERVOLTAGE[V] 0.2 1E-5 1E-4 0.001 0.01 0.1 tp,PULSEWIDTH[s] Figure 17. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) Figure 18. IGBTtransientthermalimpedance (D=tp/T) 10 Rev.2.1,2014-10-31 IGZ75N65H5 Highspeedseriesfifthgeneration 89:;<=>?:> 5 5 10 3 3 3 3 2 2 7 6 01221034356 $'( $%& 987 8"! 789 787 78 8 8!! 8# 8# 8 8# 89 7 8 78" #89 879 8!9 89 8! 98# 89 !8 98 !8" 78 8 789 98" 78!7 8#7 8 87 !8# !89 #8 #8 8 98 8! 8 6 $%& 8 8 8#9 8 7 8 ! 87 8" 8 8!# 8 " 89 8 9 8! 1)*36 $'( 879 8 8"9 897 8# 87" 8"! 89 89! 8!9 899# 87 87 8 87 8" 8## 8#! 89" 8 8!" 87# 87 87! 87 87 " 87!" 11 ,)+034.,3 4" " 7 6)23 99 #8900 3+5,-3.-5,/3)41, 166+3.43 72 27 ! 531161, Rev.2.1,2014-10-31 IGZ75N65H5 Highspeedseriesfifthgeneration vGE(t) 90% VGE a a 10% VGE b b t iC(t) 90% IC 90% IC 10% IC 10% IC t vCE(t) t td(off) tf td(on) t tr vGE(t) 90% VGE 10% VGE t iC(t) CC 2% IC t vCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 parasitic relief on = VCE x IC x dt 2% VCE t3 t2 t3 t4 t 12 Rev.2.1,2014-10-31 IGZ75N65H5 High speed series fifth generation Revision History IGZ75N65H5 Revision: 2014-10-31, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2014-10-17 Preliminary data sheet 2.1 2014-10-31 Final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all ? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 13 Rev. 2.1, 2014-10-31