VISHAY V30200C

New Product
V30200C, VB30200C & VI30200C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.526 V at IF = 5 A
FEATURES
TMBS®
• Trench MOS Schottky technology
TO-220AB
• Low forward voltage drop, low power
losses
• High efficiency operation
• Low thermal resistance
2
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
3
1
V30200C
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
• Solder dip 260 °C, 40 s (for TO-220AB and
TO-262AA package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TO-262AA
K
K
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
2
1
1
VB30200C
PIN 1
3
VI30200C
K
PIN 2
2
HEATSINK
PIN 1
PIN 2
PIN 3
K
MECHANICAL DATA
Case: TO-220AB, TO-263AB and TO-262AA
Epoxy meets UL 94V-0 flammability rating
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
200 V
IFSM
250 A
VF at IF = 15 A
0.648 V
TJ max.
150 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
V30200C
VB30200C
VI30200C
UNIT
VRRM
200
V
IF(AV)
30
15
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load per diode
IFSM
250
A
Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C
EAS
100
mJ
Peak repetitive reverse current at tp = 2 µs, 1 kHz per diode
IRRM
1.0
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/µs
TJ, TSTG
- 40 to + 150
°C
Maximum average forward rectified current
(Fig. 1)
per device
per diode
Operating junction and storage temperature range
Document Number: 89014
Revision: 31-Jul-08
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
New Product
V30200C, VB30200C & VI30200C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Breakdown voltage
IR = 10 mA
Instantaneous forward voltage per diode
(1)
IF = 5 A
IF = 10 A
IF = 15 A
SYMBOL
TYP.
VBR
TJ = 25 °C
MAX.
UNIT
205 (minimum)
-
V
0.691
0.770
0.841
1.10
0.72
TJ = 25 °C
V
VF
IF = 5 A
IF = 10 A
IF = 15 A
TJ = 125 °C
0.526
0.594
0.648
VR = 180 V
TJ = 25 °C
TJ = 125 °C
2.4
3.8
-
µA
mA
VR = 200 V
TJ = 25 °C
TJ = 125 °C
5.3
6.0
160
12
µA
mA
Reverse current per diode (2)
IR
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance per diode
V30200C
VB30200C
RθJC
VI30200C
UNIT
2.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
TO-220AB
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
2.248
4W
50/tube
Tube
V30200C-E3/4W
TO-263AB
VB30200C-E3/4W
1.39
4W
50/tube
Tube
TO-263AB
VB30200C-E3/8W
1.39
8W
800/reel
Tape and reel
TO-262AA
VI30200C-E3/4W
1.46
4W
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
40
14
D = 0.5
30
20
10
D = 0.2
10
D = 1.0
D = 0.1
8
6
T
4
2
0
D = 0.8
D = 0.3
12
Average Power Loss (W)
Average Forward Current (A)
Resistive or Inductive Load
D = tp/T
tp
0
0
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2
25
50
75
100
125
150
175
0
2
4
6
8
10
12
14
16
18
Case Temperature (°C)
Average Forward Current (A)
Figure 1. Forward Derating Curve
Figure 2. Forward Power Loss Characteristics Per Diode
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 89014
Revision: 31-Jul-08
New Product
V30200C, VB30200C & VI30200C
Vishay General Semiconductor
10 000
TA = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TA = 125 °C
10
TA = 25 °C
0.1
0.2
1000
100
10
0.4
0.6
0.8
1.0
1.2
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
100
TA = 150 °C
10
TA = 125 °C
1
0.1
0.01
TA = 25 °C
0.001
0.0001
10
20
30
40
50
60
70
80
90
100
Junction to Case
1
V(B,I)30200C
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
Document Number: 89014
Revision: 31-Jul-08
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
New Product
V30200C, VB30200C & VI30200C
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
1
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.160 (4.06)
0.140 (3.56)
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.035 (0.90)
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
TO-262AA
0.185 (4.70)
0.175 (4.44)
0.411 (10.45) MAX.
0.250 (6.35) MIN.
30° (TYP.)
(REF.)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
K
0.950 (24.13)
0.920 (23.37)
1
PIN
2
0.401 (10.19)
0.381 (9.68)
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
PIN 1
PIN 2
PIN 3
HEATSINK
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.022 (0.56)
0.014 (0.35)
0.205 (5.20)
0.195 (4.95)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
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4
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.33 (8.38) MIN.
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 89014
Revision: 31-Jul-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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