Diode RapidSwitchingEmitterControlledDiode IDW80C65D1 EmitterControlledDiodeRapid1CommonCathodeSeries Datasheet IndustrialPowerControl IDW80C65D1 EmitterControlledDiodeRapid1CommonCathodeSeries RapidSwitchingEmitterControlledDiode Features: A1 C1 C2 A2 A2 A1 •QualifiedaccordingtoJEDECfortargetapplications •650VEmitterControlledtechnology •Temperaturestablebehaviourofkeyparameters •Lowforwardvoltage(VF) •Ultrafastrecovery •Lowreverserecoverycharge(Qrr) •Lowreverserecoverycurrent(Irrm) •175°Cjunctionoperatingtemperature •Pb-freeleadplating •RoHScompliant C Applications: •AC/DCconverters •BoostdiodeinPFCstages •Freewheelingdiodesininvertersandmotordrives •Generalpurposeinverters •Switchmodepowersupplies 1 Packagepindefinition: 2 3 •Pin1-anode(A1) •Pin2andbackside-cathode(C) •Pin3-anode(A2) Key Performance and Package Parameters Type IDW80C65D1 Vrrm If Vf, Tvj=25°C Tvjmax Marking Package 650V 2x 40A 1.35V 175°C C80ED1 PG-TO247-3 2 Rev.2.1,2014-12-10 IDW80C65D1 EmitterControlledDiodeRapid1CommonCathodeSeries Table of Contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings (per leg) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistances (per leg) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 3 Rev.2.1,2014-12-10 IDW80C65D1 EmitterControlledDiodeRapid1CommonCathodeSeries Maximum Ratings (per leg) For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. Parameter Symbol Value Unit Repetitivepeakreversevoltage,Tvj≥25°C VRRM 650 V Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 80.0 40.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 120.0 A Diode surge non repetitive forward current TC=25°C,tp=10.0ms,sinehalfwave IFSM PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 179.0 89.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C A 320.0 Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm Thermal Resistances (per leg) Parameter Characteristic Symbol Conditions Max. Value Unit Diode thermal resistance,1) junction - case Rth(j-c) 0.84 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W Electrical Characteristics (per leg), at Tvj = 25°C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. - 1.35 1.32 1.28 1.70 - - Unit Static Characteristic Diode forward voltage VF IF=40.0A Tvj=25°C Tvj=125°C Tvj=175°C Reverse leakage current2) IR VR=650V Tvj=25°C Tvj=175°C 40.0 1600.0 - V µA Electrical Characteristic, at Tvj = 25°C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. - 13.0 - Unit Dynamic Characteristic Internal emitter inductance measured 5mm (0.197 in.) from case 1) 2) LE nH Pleasebeawarethatinnonstandardloadconditions,duetohighRth(j-c),TvjclosetoTvjmaxcanbereached. Reverse leakage current per leg specified for operating conditions with zero voltage applied to the other leg. 4 Rev.2.1,2014-12-10 IDW80C65D1 EmitterControlledDiodeRapid1CommonCathodeSeries Switching Characteristics (per leg), Inductive Load Parameter Symbol Conditions Value Unit min. typ. max. Tvj=25°C, VR=400V, IF=40.0A, diF/dt=1000A/µs, Lσ=30nH, Cσ=40pF, switch IGZ75N65H5. - 77 - ns - 0.87 - µC - 17.5 - A - -1520 - A/µs Tvj=25°C, VR=400V, IF=40.0A, diF/dt=200A/µs, Lσ=30nH, Cσ=40pF, switch IGZ75N65H5. - 129 - ns - 0.49 - µC - 6.9 - A - -300 - A/µs Diode Characteristic, at Tvj = 25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Switching Characteristics (per leg), Inductive Load Parameter Symbol Conditions Value Unit min. typ. max. Tvj=175°C, VR=400V, IF=40.0A, diF/dt=1000A/µs, Lσ=30nH, Cσ=40pF, switch IGZ75N65H5. - 110 - ns - 2.36 - µC - 27.3 - A - -1320 - A/µs Tvj=125°C, VR=400V, IF=40.0A, diF/dt=200A/µs, Lσ=30nH, Cσ=40pF, switch IGZ75N65H5. - 163 - ns - 1.04 - µC - 10.4 - A - -600 - A/µs Diode Characteristic, at Tvj = 175°C/125°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt 5 Rev.2.1,2014-12-10 IDW80C65D1 EmitterControlledDiodeRapid1CommonCathodeSeries 180 80 160 70 IF,FORWARDCURRENT[A] Ptot,POWERDISSIPATION[W] 140 120 100 80 60 40 50 40 30 20 10 20 0 60 25 50 75 100 125 150 0 175 25 TC,CASETEMPERATURE[°C] 75 100 150 175 Figure 2. Diode forward current per leg as a function of case temperature (Tvj≤175°C) 1 200 Tvj=25°C,IF=40A Tvj=125°C,IF=40A Tvj=175°C,IF=40A 180 trr,REVERSERECOVERYTIME[ns] D = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.1 1E-5 1E-4 0.001 0.01 0.1 160 140 120 100 80 60 40 20 i: 1 2 3 4 5 6 ri[K/W]: 0.015899 0.19942 0.23881 0.34593 0.036218 2.8E-3 τi[s]: 1.9E-5 2.4E-4 1.9E-3 0.011629 0.091242 1.815212 0.01 1E-6 125 TC,CASETEMPERATURE[°C] Figure 1. Power dissipation per leg as a function of case temperature (Tvj≤175°C) Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] 50 0 200 1 tp,PULSEWIDTH[s] 600 1000 1400 1800 2200 2600 3000 dIF/dt,DIODECURRENTSLOPE[A/µs] Figure 3. Diode transient thermal impedance per leg as Figure 4. Typical reverse recovery time per leg as a a function of pulse width function of diode current slope (D=tp/T) (VR=400V) 6 Rev.2.1,2014-12-10 IDW80C65D1 EmitterControlledDiodeRapid1CommonCathodeSeries 3.0 45 40 2.5 Irrm,REVERSERECOVERYCURRENT[A] Qrr,REVERSERECOVERYCHARGE[µC] Tvj=25°C,IF=40A Tvj=125°C,IF=40A Tvj=175°C,IF=40A 2.0 1.5 1.0 0.5 Tvj=25°C,IF=40A Tvj=125°C,IF=40A Tvj=175°C,IF=40A 35 30 25 20 15 10 5 0.0 200 600 1000 1400 1800 2200 2600 0 200 3000 dIF/dt,DIODECURRENTSLOPE[A/µs] Figure 5. Typical reverse recovery charge per leg as a function of diode current slope (VR=400V) 1400 1800 2200 2600 3000 80 Tvj=25°C,IF=40A Tvj=125°C,IF=40A Tvj=175°C,IF=40A Tvj=25°C Tvj=175°C 70 -500 IF,FORWARDCURRENT[A] dIrr/dt,DIODEPEAKRATEOFFALLOFIrr[A/µs] 1000 Figure 6. Typical peak reverse recovery current per leg as a function of diode current slope (VR=400V) 0 -250 600 dIF/dt,DIODECURRENTSLOPE[A/µs] -750 -1000 -1250 -1500 -1750 60 50 40 30 20 -2000 10 -2250 -2500 200 600 1000 1400 1800 2200 2600 0 0.00 3000 dIF/dt,DIODECURRENTSLOPE[A/µs] 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VF,FORWARDVOLTAGE[V] Figure 7. Typical diode peak rate of fall of rev. rec. current per leg as a function of diode current slope (VR=400V) 7 Figure 8. Typical diode forward current per leg as a function of forward voltage Rev.2.1,2014-12-10 IDW80C65D1 EmitterControlledDiodeRapid1CommonCathodeSeries 2.25 IF=10A IF=20A IF=40A IF=60A IF=80A VF,FORWARDVOLTAGE[V] 2.00 1.75 1.50 1.25 1.00 0.75 0.50 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 9. Typical diode forward voltage per leg as a function of junction temperature 8 Rev.2.1,2014-12-10 IDW80C65D1 EmitterControlledDiodeRapid1CommonCathodeSeries PG-TO247-3 9 Rev.2.1,2014-12-10 IDW80C65D1 EmitterControlledDiodeRapid1CommonCathodeSeries VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. 10 Rev.2.1,2014-12-10 IDW80C65D1 Emitter Controlled Diode Rapid 1 Common Cathode Series Revision History IDW80C65D1 Revision: 2014-12-10, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2014-12-02 Preliminary data sheet 2.1 2014-12-10 Final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 Rev. 2.1, 2014-12-10