To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET ARY FY7BCH-02 MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FY7BCH-02 OUTLINE DRAWING ➄ ➀ ➃ 6.4 4.4 ➇ Dimensions in mm 1.1 3.0 0.275 0.65 ➀ ➇ DRAIN ➁ ➂ ➅ ➆ SOURCE ➃ ➄ GATE ➀ ➃ ● 2.5V DRIVE ● VDSS .................................................................................. 20V ● rDS (ON) (MAX) ............................................................. 27mΩ ● ID ........................................................................................... 7A ➇ ➄ ➁➂ ➅➆ TSSOP8 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter VDSS VGSS Drain-source voltage Gate-source voltage ID IDM IDA Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) IS ISM PD Tch Tstg Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature — Weight Ratings Unit VGS = 0V VDS = 0V Conditions 20 ±10 V V L = 10µH 7 49 7 A A A 1.5 6.0 1.6 –55 ~ +150 –55 ~ +150 A A W °C °C 0.035 g Typical value Sep.1998 MITSUBISHI Nch POWER MOSFET ARY FY7BCH-02 MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P ELECTRICAL CHARACTERISTICS HIGH-SPEED SWITCHING USE (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage ID = 1mA, VGS = 0V IGSS IDSS VGS = ±10V, VDS = 0V VDS = 20V, VGS = 0V VGS (th) rDS (ON) rDS (ON) Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Test conditions ID = 1mA, VDS = 10V ID = 7A, VGS = 4V ID = 3.5A, VGS = 2.5V ID = 7A, VGS = 4V ID = 7A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz VDD = 10V, ID = 3.5A, VGS = 4V, RGEN = RGS = 50Ω IS = 1.5A, VGS = 0V Channel to ambient IS = 1.5A, dis/dt = –50A/µs Limits Unit Min. 20 — — Typ. — — — Max. — ±0.1 0.1 0.4 — — — 0.7 20 29 0.140 1.3 27 40 0.189 V mΩ mΩ V — — — — 15 950 350 260 — — — — S pF pF pF — — — — 20 65 135 130 — — — — ns ns ns ns — 0.75 1.1 V — — — 50 78.1 — °C/W ns V µA mA Sep.1998