MITSUBISHI Nch POWER MOSFET ARY FS20KMA-5A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FS20KMA-5A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 ➁ 2.6 ± 0.2 ➀ ➁ ➂ ● 10V DRIVE ● VDSS ............................................................................... 250V ● rDS (ON) (MAX) ............................................................. 0.20Ω ● ID ......................................................................................... 20A 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 ➀ GATE ➁ DRAIN ➂ SOURCE ➀ ➂ TO-220FN APPLICATION CS Switch for CRT Display monitor MAXIMUM RATINGS Symbol (Tc = 25°C) Ratings Unit VDSS Drain-source voltage VGS = 0V 250 V VGSS ID IDM Gate-source voltage Drain current Drain current (Pulsed) VDS = 0V ±20 20 60 V A A IDA PD Tch Tstg Viso Avalanche drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage L = 200µH 20 40 –55 ~ +150 –55 ~ +150 2000 A W °C °C V Weight Typical value 2.0 g — Parameter Conditions AC for 1minute, Terminal to case Sep.1998 MITSUBISHI Nch POWER MOSFET ARY FS20KMA-5A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P ELECTRICAL CHARACTERISTICS HIGH-SPEED SWITCHING USE (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage ID = 1mA, VGS = 0V IGSS IDSS Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) Output capacitance Reverse transfer capacitance Turn-on delay time Rise time tf VSD Turn-off delay time Fall time Source-drain voltage Rth (ch-c) Thermal resistance Test conditions Limits Unit VGS = ±20V, VDS = 0V VDS = 250V, VGS = 0V Min. 250 — — Typ. — — — Max. — ±10 1 ID = 1mA, VDS = 10V ID = 10A, VGS = 10V ID = 10A, VGS = 10V ID = 10A, VDS = 10V 2.0 — — — 3.0 0.15 1.50 20.0 4.0 0.20 2.00 — V Ω V S — — — — 2250 220 65 35 — — — — pF pF pF ns — — — — 60 400 90 0.95 — — — — ns ns ns V — — 3.13 °C/W VDS = 25V, VGS = 0V, f = 1MHz VDD = 150V, ID = 10A, VGS = 10V, RGEN = RGS = 50Ω IS = 10A, VGS = 0V Channel to case V µA mA Sep.1998