NSS20101J 20 V, 1.0 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. • This is a Pb−Free Device http://onsemi.com 20 VOLTS, 1.0 AMPS NPN LOW VCE(sat) TRANSISTOR COLLECTOR 3 1 BASE MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector-Emitter Voltage VCEO 20 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Rating Collector Current − Continuous IC 1.0 A Collector Current − Peak ICM 2.0 A Electrostatic Discharge ESD HBM Class 3B MM Class C 2 EMITTER MARKING DIAGRAM & PIN ASSIGNMENT 3 Collector 3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) 255 mW 2.0 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 490 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 415 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ 100 mm2, 1 oz. copper traces. 2. FR−4 @ 500 mm2, 1 oz. copper traces. © Semiconductor Components Industries, LLC, 2008 September, 2008 − Rev. 0 1 1 xx M G G 2 SC−89 CASE 463C 1 Base 2 Emitter xx = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† NSS20101JT1G SC−89 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSS20101J/D NSS20101J ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 5.0 Vdc) IEBO Vdc 20 Vdc 40 Vdc 6.0 mAdc 0.1 mAdc 0.1 ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 10 mA, VCE = 2.0 V) (IC = 100 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) hFE 200 200 150 100 500 Collector −Emitter Saturation Voltage (Note 3) (IC = 10 mA, IB = 0.5 mA) (IC = 0.10 A, IB = 0.010 A) (IC = 0.5 A, IB = 0.050 A) (IC = 1.0 A, IB = 0.1 A) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (IC = 0.5 A, IB = 50 mA) VBE(sat) 1.1 V Base −Emitter Turn−on Voltage (Note 3) (IC = 0.5 A, VCE = 2.0 V) VBE(on) 0.90 V Cutoff Frequency (IC = 100 mA, VCE = 2.0 V, f = 100 MHz) V 0.015 0.040 0.115 0.220 fT 350 MHz Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo 40 pF Output Capacitance (VCB = 4.0 V, f = 1.0 MHz) Cobo 6 pF 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. TYPICAL CHARACTERISTICS 600 150°C 0.35 hFE, DC CURRENT GAIN PD, POWER DISSIPATION (W) 0.40 0.30 0.25 Note 2 0.20 Note 1 0.15 0.10 0.05 0 0 20 40 60 80 100 120 140 400 25°C 300 −55°C 200 100 0 160 VCE = 2 V 500 0.001 0.01 0.1 1 TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (A) Figure 1. Power Derating Figure 2. DC Current Gain http://onsemi.com 2 10 NSS20101J TYPICAL CHARACTERISTICS 1 150°C VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 4 V 500 400 25°C 300 −55°C 200 100 0 0.001 0.01 0.1 1 10 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 150°C −55°C 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) 1.4 VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) Figure 5. Collector−Emitter Saturation Voltage IC/IB = 50 1.2 −55°C 25°C 150°C 0.4 0.2 0.001 0.001 0.01 0.1 1 10 Figure 4. Collector−Emitter Saturation Voltage 0.01 0.6 IC/IB = 10 Figure 3. DC Current Gain 0.1 0.8 0.01 IC, COLLECTOR CURRENT (A) 25°C 1.0 −55°C IC, COLLECTOR CURRENT (A) IC/IB = 20 0.001 25°C 0.1 0.001 1 0.001 150°C 0.01 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 600 0.1 1 10 1.4 IC/IB = 10 1.2 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 0.2 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 6. Base−Emitter Saturation Voltage 1.6 VCE = 2 V 1.4 1.2 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 0.2 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 7. Base−Emitter Saturation Voltage Figure 8. Base−Emitter Voltage http://onsemi.com 3 10 10 NSS20101J TYPICAL CHARACTERISTICS Cibo, INPUT CAPACITANCE (pF) 60 IC = 2 A IC = 1 A IC = 0.5 A 0.1 IC = 0.1 A IC = 50 mA 0.01 0.0001 0.001 0.01 0.1 10 0 1 2 3 4 5 6 Figure 10. Input Capacitance 8 6 4 2 10 15 20 25 30 35 7 TJ = 25°C fTEST = 1 MHz VCE = 2 V 350 300 250 200 150 100 50 0 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 11. Output Capacitance Figure 12. Current Gain Bandwidth Product 10 TJ = 25°C 100 ms 1 1 ms 0.5 ms Thermal Limit 0.1 0.01 10 ms 0.1 1 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 13. Safe Operating Area http://onsemi.com 4 8 400 VCB, COLLECTOR−BASE VOLTAGE (V) IC, COLLECTOR CURRENT (A) Cobo, OUTPUT CAPACITANCE (pF) 20 Figure 9. Saturation Region TJ = 25°C fTEST = 1 MHz 5 30 VEB, BASE EMITTER VOLTAGE (V) 10 0 40 IB, BASE CURRENT (A) 12 0 TJ = 25°C fTEST = 1 MHz 50 0 1 fTau, CURRENT GAIN BANDWIDTH PRODUCT VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 1 100 1 NSS20101J PACKAGE DIMENSIONS SC−89, 3 LEAD CASE 463C−03 ISSUE C A −X− 3 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C−01 OBSOLETE, NEW STANDARD 463C−02. B −Y− S K G 2 PL D 0.08 (0.003) M C M DIM A B C D G H J K L M N S 3 PL X Y N J −T− MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF −−− −−− 10 _ −−− −−− 10 _ 1.50 1.60 1.70 INCHES NOM MAX 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013 0.020 BSC 0.021 REF 0.004 0.006 0.008 0.012 0.016 0.020 0.043 REF −−− −−− 10 _ −−− −−− 10 _ 0.059 0.063 0.067 MIN 0.059 0.030 0.024 0.009 SEATING PLANE SOLDERING FOOTPRINT* H H L G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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