ZXMS6004DN8

ZXMS6004DN8
ADVANCE INFORMATION
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
®
INTELLIFET MOSFET
Product Summary
Features and Benefits
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Continuos Drain-Source Voltage: 60V
On-State Resistance: 500mΩ
Nominal Load Current (VIN = 5V): 1.3A
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Clamping Energy: 120mJ
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Description
The ZXMS6004DN8 is a dual self-protected low side MOSFET with
logic level input. It integrates over-temperature, overcurrent,
overvoltage (active clamp) and ESD protected logic level functionality.
The ZXMS6004DN8 is ideal as a general purpose switch driven from
3.3V or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
Low Input Current
Logic Level Input (3.3V and 5V)
Short Circuit Protection with Auto Restart
Overvoltage Protection (Active Clamp)
Thermal Shutdown with Auto Restart
Overcurrent Protection
Input Protection (ESD)
High Continuous Current Rating
Totally Lead-Free; RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Applications
Mechanical Data
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Lamp Driver
Motor Driver
Relay Driver
Solenoid Driver
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Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 79.1 mg (Approximate)
SO-8
D1
IN1
D2
IN2
S1
S1
D1
IN1
D1
S2
D2
IN2
D2
S2
Top View
Pin-Out
Device Symbol
Top View
Ordering Information (Note 4)
Product
ZXMS6004DN8-13
Notes:
Marking
6004DN8
Reel size (inches)
13
Tape width (mm)
12
Quantity per reel
2,500 units
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
6004DN8 = Product name
Logo
Part No.
6004DN8
YY WW
Pin 1.
YY: Year
WW: Week: 01~52;
52 represents 52 and 53 week
Top View
IntelliFET is a registered trademark of Diodes Incorporated.
ZXMS6004DN8
Document number: DS38040 Rev. 2 - 2
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ZXMS6004DN8
ADVANCE INFORMATION
Functional Block Diagram
Application Information
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Two completely isolated independent channels
Especially suited for loads with a high in-rush current such as lamps and motors
All types of resistive, inductive and capacitive loads in switching applications
μC compatible power switch for 12V and 24V DC applications
Replaces electromechanical relays and discrete circuits
Linear Mode Capability — the current-limiting protection circuitry is designed to deactivate at low VDS to minimize on-state power dissipation
The maximum DC operating current is therefore determined by the thermal capability of the package or board combination, rather than by the
protection circuitry. This does not compromise the product’s ability to self-protect at low VDS
Absolute Maximum Ratings (@TA = +25°C, unless otherwise stated.)
Characteristic
Symbol
Value
Units
VDS
60
V
VDS(SC)
36
V
VIN
-0.5 to +6
V
Continuous Input Current @ -0.2V ≤ VIN ≤ 6V
Continuous Input Current @VIN < -0.2V or VIN > 6V
IIN
No limit
│IIN │≤2
mA
Pulsed Drain Current @VIN = 3.3V
IDM
2
A
Pulsed Drain Current @VIN = 5V
IDM
2.5
A
IS
1
A
Pulsed Source Current (Body Diode)
ISM
5
A
Unclamped Single Pulse Inductive Energy,
TJ = +25°C, ID = 0.5A, VDD = 24V
EAS
120
mJ
Electrostatic Discharge (Human Body Model)
VHBM
4,000
V
Charged Device Model
VCDM
1,000
V
Continuous Drain-Source Voltage
Drain-Source Voltage For Short Circuit Protection
Continuous Input Voltage
Continuous Source Current (Body Diode) (Note 5)
ZXMS6004DN8
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ADVANCE INFORMATION
Thermal Characteristics
Characteristic
Power Dissipation at Tamb = +25°C (Note 5)
Linear Derating Factor
Power Dissipation at Tamb = +25°C (Note 6)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 7)
Operating Temperature Range
Storage Temperature Range
Notes:
Symbol
PD
PD
RθJA
RθJA
RθJC
TJ
TSTG
Value
1.21
9.7
1.56
12.5
103
81
13.5
-40 to +150
-55 to +150
Units
W
mW/°C
W
mW/°C
°C/W
°C/W
°C/W
°C
°C
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
7. Thermal resistance between junction and the mounting surfaces of drain and source pins.
Recommended Operating Conditions
The ZXMS6004DN8 is optimized for use with µC operating from 3.3V and 5V supplies.
Symbol
Min
Max
Input Voltage Range
Characteristic
VIN
0
5.5
V
Ambient Temperature Range
TA
-40
+125
°C
High Level Input Voltage for MOSFET to be On
VIH
3
5.5
V
Low Level Input Voltage for MOSFET to be Off
VIL
0
0.7
V
Peripheral Supply Voltage (voltage to which load is referred)
VP
0
36
V
ZXMS6004DN8
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Unit
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ZXMS6004DN8
10
2.50
Id, Drain Current (A)
Id(A) @
DC
IF(A)-MRP(1)
Id(A)
@Pw=1s
Id(A)
@Pw=100
ms
Rds(on)
Limited
Id(A)
@Pw=10
ms
Id(A)
@Pw=1ms
Id(A)
@Pw=100
us
0.1
Tj,(Max)=150℃
Ta=25℃,
Vgs=5V
Single Pulse
0.01
0.1
1
10
IF, DC Forward Current(A)
Id(A)
@Pw=10s
1
2.00
IF(A)-1 inch(2)
1.50
1.00
0.50
0.00
0
25
50
75
100
125
150
100
TA, Ambient Temperature (℃)
Vds, Drain-Source Voltage (V)
SOA, Safe Operation Area
Figure. DC Forward Current Derating
1
800
r(t) @ D=0.9
r(t) @ D=0.7
r(t) @ D=0.5
0.1
r(t) @ D=0.3
r(t) @ D=0.1
r(t) @ D=0.05
r(t) @ D=0.02
r(t) @ D=0.01
0.01
r(t) @ D=0.005
r(t) @ D=Single Pulse
Rthja(t)=r(t) * Rthja
Rthja=108C/W
P(pk), Peak Transient Power (W)
r(t), Transient Thermal Resistance
ADVANCE INFORMATION
Thermal Characteristics (Continued)
Single Pulse
Rthja=108C/W
Rthja(t)=Rthja * r(t)
Tj-Ta=P * Rthja (t)
700
600
500
400
300
200
100
Duty Cycle, D=t1 / t2
0.001
0
0.00001 0.0001 0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
1000
Figure 1: Pulse Power Dissipation
Figure: Transient Thermal Resistance
Document number: DS38040 Rev. 2 - 2
0.01
t1, Pulse Duration Time (sec)
t1, Pulse Duration Time (sec)
ZXMS6004DN8
0.00001 0.0001 0.001
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ADVANCE INFORMATION
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic
Static Characteristics
Symbol
Min
Typ
Max
Unit
Drain-Source Clamp Voltage
VDS(AZ)
60
65
70
V
—
—
1
—
—
2
0.7
1
1.5
—
60
100
—
120
200
—
—
300
—
400
600
—
350
500
0.9
—
—
1.0
—
—
1.1
—
—
1.2
—
—
0.7
1.7
—
1
2.2
—
td(on)
—
5
—
µs
Off-State Drain Current
IDSS
Input Threshold Voltage
VIN(th)
Input Current
IIN
Input Current while Over-Temperature Active
—
Static Drain-Source On-State Resistance
RDS(ON)
Continuous Drain Current (Notes 5)
ID
Continuous Drain Current (Note 5)
Current Limit (Note 8)
ID(LIM)
µA
V
µA
µA
mΩ
Test Condition
ID = 10mA
VDS = 12V, VIN = 0V
VDS = 36V, VIN = 0V
VDS = VGS, ID = 1mA
VIN = +3V
VIN = +5V
VIN = +5V
VIN = +3V, ID = 1A
VIN = +5V, ID = 1A
VIN = 3V; TA = +25°C
A
VIN = 5V; TA = +25°C
VIN = 3V; TA = +25°C
VIN = 5V; TA = +25°C
A
VIN = +3V
VIN = +5V
Dynamic Characteristics
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
tr
—
10
—
µs
td(off)
—
45
—
µs
ff
—
15
—
µs
TJT
+150
+175
—
°C
—
ff
—
+10
—
°C
—
VDD = 12V, ID = 0.5A, VGS = 5V
Over-Temperature Protection
Thermal Overload Trip Temperature (Note 9)
Thermal Hysteresis (Note 9)
Notes:
8. The drain current is restricted only when the device is in saturation (see graph ”Typical Output Characteristic”). This allows the device to be used in the
on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside
saturation makes current limit unnecessary.
9. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal
operating range, so this part is not designed to withstand over-temperature for extended periods.
ZXMS6004DN8
Document number: DS38040 Rev. 2 - 2
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ZXMS6004DN8
ADVANCE INFORMATION
Typical Characteristics
ZXMS6004DN8
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ZXMS6004DN8
Drain-Source Voltage (V)
Drain-Source Voltage (V)
12
ID=1A
10
VDS
8
6
VIN
4
2
0
-50
0
50
100
150
200
250
300
12
ID=1A
VDS
10
8
6
4
VIN
2
0
-50
0
50
100
150
200
250
300
Time (s)
Time (s)
Switching Speed
Switching Speed
ID Drain Current (A)
ADVANCE INFORMATION
Typical Characteristics (Continued)
VIN = 5V
8
VDS = 15V
RD = 0
6
4
2
0
0
5
10
15
Time (ms)
Typical Short Circuit Protection
ZXMS6004DN8
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ZXMS6004DN8
Package Outline Dimensions
SO-8
0.254
ADVANCE INFORMATION
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
E1 E
SO-8
Dim
Min
Max
A
—
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
—
0.35
L
0.62
0.82

0
8
All Dimensions in mm
Gauge Plane
Seating Plane
A1
L
Detail ‘A’
7°~9°
h
45°
Detail ‘A’
A2 A A3
b
e
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SO-8
X
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
C1
C2
Y
ZXMS6004DN8
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ADVANCE INFORMATION
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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ZXMS6004DN8
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