ETC BSP75G(2)

BSP75G
ADVANCE INFORMATION
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET™
MOSFET
SUMMARY
Continuous drain source voltage VDS=60V
On-state resistance 550m
Nominal load current 1.6A
Clamping Energy 550mJ
DESCRIPTION
Self protected low side MOSFET. Monolithic over temperature, over current, over
voltage (active clamp) and ESD protected logic level power MOSFET intended as a
general purpose switch.
SOT223
PACKAGE
FEATURES
• High continuous current rating
• Logic level input
• Input protection (ESD)
• Thermal shutdown with auto restart
• Over load protection
• Short circuit protection with pulse start capability and auto restart
• Over voltage protection (active clamp)
PINOUT
DIAGRAM
• Load dump protection (actively protects load)
APPLICATIONS
FUNCTIONAL BLOCK DIAGRAM
• Especially suited for loads with a high
inrush current such as lamps and
motors
• All types of resistive, inductive and
capacitive loads in switching
applications
• ␮C compatible power switch for 12V
and 24V DC applications and for 42V
Powernet
• Automotive rated
• Replaces electromechanical relays and
discrete circuits
DRAFT ISSUE C - NOVEMBER 2003
1
SEMICONDUCTORS
BSP75G
ADVANCE INFORMATION
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Continuous drain-source voltage
V DS
LIMIT
UNIT
60
V
36
V
-0.2 ... +10
V
Drain-source voltage for short circuit protection
V DS(SC)
Continuous input voltage
V IN
Peak input voltage
V IN
-0.2 ... +20
V
Operating temperature range
T j,
-40 to +150
°C
Storage temperature range
T stg
-55 to +150
°C
Power dissipation at T A =25°C
PD
2.5
W
Continuous drain current @ V IN =10V; T A =25°C 2
ID
1.6
A
Pulsed drain current @ V IN =10V
Unclamped single pulse inductive energy
I DM
3
A
E AS
550
mJ
Load dump protection
V LoadDump
Electrostatic discharge (Human Body Model)
V ESD
80
V
4000
V
VALUE
UNIT
50
°C/W
NOTES
2
For a device surface mounted on FR4 PCB measured at t ⱕ10s
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to ambient (a)
R␪JA
DRAFT ISSUE C - NOVEMBER 2003
SEMICONDUCTORS
2
BSP75G
ADVANCE INFORMATION
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
STATIC
Drain-source clamp voltage
V DS(AZ)
70
75
V
Off state drain current
I DSS
60
0.1
3
␮A
V DS =12V, V IN =0V
Off state drain current
I DSS
3
15
␮A
V DS =32V, V IN =0V
I D =10mA
1
I D =10mA
Input threshold voltage
V IN(th)
2.1
2.5
V
Input current
I IN
0.7
1.2
mA
Input current
I IN
1.5
2.7
mA
V IN =+7V
Input current
I IN
4
7
mA
V IN =+10V
Static drain-source on-state resistance
R DS(on)
520
675
m⍀
Static drain-source on-state resistance
Continuous load current 2
R DS(on)
385
550
m⍀
V IN =5V, I D =0.7A
V IN =10V, I D =0.7A
ID
1.6
A
Continuous load current 2
ID
1
A
V IN =5V
Current limit 3
I D(LIM)
0.7
1.1
1.75
A
Current limit 3
I D(LIM)
2
3
4
A
V IN =5V, V DS >5V
V IN =10V, V DS >5V
V IN =+5V
V IN =10V
DYNAMIC
Turn-on time (V IN to 90% I D )
t on
4
20
␮s
R L =22⍀,
V IN =0 to 10V,
V BB =12V
Turn-off time (V IN to 90% I D )
t off
10
20
␮s
R L =22⍀,
V IN =10V to 0V,
V BB =12V
Slew rate on (70 to 50% V BB )
-dV DS /dt on
6.5
20
V/␮s R L =22⍀,
V IN =0 to 10V,
V BB =12V
Slew rate off (50 to 70% V BB )
DV DS /dt on
3.2
10
V/␮s R L =22⍀,
V IN =10V to 0V,
V BB =12V
PROTECTION FUNCTIONS 1
Required input voltage for over
temperature protection
V PROT
4.5
Thermal overload trip temperature
T JT
150
Thermal hysteresis
Unclamped single pulse inductive
energy Tj=25°C
V
175
10
550
E AS
°C
°C
mJ
I D(ISO) =0.7A,
V BB =32V
NOTES
1
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous, repetitive operation.
2
For a device surface mounted on FR4 PCB measured at tⱕ10s.
3
The drain current is limited to a reduced value when Vds exceeds a safe value.
DRAFT ISSUE C - NOVEMBER 2003
3
SEMICONDUCTORS
BSP75G
ADVANCE INFORMATION
PACKAGE OUTLINE
PACKAGE DIMENSIONS
Millimeters
DIM
Millimeters
DIM
MIN
MAX
MIN
MAX
A
ᎏ
1.80
D
6.30
6.70
A1
0.02
0.10
e
2.30 BASIC
A2
1.55
1.65
e1
4.60 BASIC
b
0.66
0.84
E
6.70
7.30
b2
2.90
3.10
E1
3.30
3.70
© Zetex plc 2003
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DRAFT ISSUE C - NOVEMBER 2003
SEMICONDUCTORS
4