DMN31D5UFZ

DMN31D5UFZ
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
•
Low Package Profile, 0.42mm Maximum Package Height
•
0.62mm x 0.62mm Package Footprint
1.5Ω @ VGS = 4.5V
•
Low On-Resistance
2.0Ω @ VGS = 2.5V
•
Very Low Gate Threshold Voltage, 1.0V max
NEW PRODUCT
ADVANCED
INFORMATION
NEW PRODUCT
V(BR)DSS
30V
Features and Benefits
ID max
TA = +25°C
RDS(ON) max
0.22A
3.0Ω @ VGS = 1.8V
4.5Ω @ VGS = 1.5V
Description
ideal for high efficiency power management applications.
General Purpose Interfacing Switch
Power Management Functions
•
Analog Switch
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
•
•
Case: X2-DFN0606-3
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Applications
•
ESD Protected Gate
•
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminals: Finish – NiPdAu over Copper leadframe
Solderable per MIL-STD-202, Method 208 e4
•
Weight: 0.001 grams (approximate)
ESD PROTECTED
Bottom View
Equivalent Circuit
Top View
Package Pin Configuration
Ordering Information (Note 4)
Part Number
DMN31D5UFZ-7B
Notes:
Case
X2-DFN0606-3
Packaging
10K/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
R6 = Product Type Marking Code
Top View
Bar Denotes Gate
and Source Side
DMN31D5UFZ
Document number: DS36843 Rev. 2 - 2
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DMN31D5UFZ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Symbol
Value
Units
Drain-Source Voltage
Characteristic
VDSS
30
V
Gate-Source Voltage
VGSS
±12
V
ID
220
150
mA
IDM
500
mA
Steady
State
Continuous Drain Current (Note 5)
NEW PRODUCT
ADVANCED
INFORMATION
NEW PRODUCT
TA = +25°C
TA = +85°C
Pulsed Drain Current (Note 6)
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Symbol
Value
Total Power Dissipation (Note 5)
Characteristic
Steady state
PD
393
mW
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
RθJA
318
°C/W
TJ, TSTG
-55 to +150
°C
Operating and Storage Temperature Range
Units
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol
Min
Typ
Max
Unit
BVDSS
30
—
—
V
IDSS
—
—
100
nA
VDS = 24V, VGS = 0V
IGSS
—
—
±10
μA
VGS = ±10V, VDS = 0V
VGS(th)
0.4
—
1.0
V
VDS = VGS, ID = 250μA
—
—
1.5
VGS = 4.5V, ID = 100mA
—
—
2.0
VGS = 2.5V, ID = 50mA
—
—
3.0
—
—
4.5
—
2.8
—
VSD
—
0.75
1.0
V
Input Capacitance
Ciss
—
22.2
—
pF
Output Capacitance
Coss
—
2.9
—
pF
Reverse Transfer Capacitance
Crss
—
2.2
—
pF
Total Gate Charge
Qg
—
0.35
—
nC
Gate-Source Charge
Qgs
—
0.05
—
nC
Gate-Drain Charge
Qgd
—
0.02
—
nC
Turn-On Delay Time
tD(on)
—
3.1
—
ns
Turn-On Rise Time
tr
—
2.0
—
ns
Turn-Off Delay Time
tD(off)
—
20
—
ns
tf
—
6.9
—
ns
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
@TC = +25°C
Test Condition
VGS = 0V, ID = 250μA
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
RDS(ON)
Ω
VGS = 1.8V, ID = 20mA
VGS = 1.5V, ID = 10mA
VGS = 1.2V, ID = 1mA
VGS = 0V, IS = 10mA
DYNAMIC CHARACTERISTICS (Note 8)
Turn-Off Fall Time
Notes:
VDS = 15V, VGS = 0V,
f = 1.0MHz
VGS = 4.5V, VDS = 15V,
ID = 200mA
VDD = 10V, VGS = 4.5V,
RG = 6Ω, ID = 200mA
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN31D5UFZ
Document number: DS36843 Rev. 2 - 2
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June 2014
© Diodes Incorporated
DMN31D5UFZ
0.8
0.8
VGS = 1.8V
VDS = 5.0V
0.7
VGS = 4.5V
VGS = 4.0V
0.6
VGS = 2.5V
VGS = 1.5V
VGS = 3.0V
0.5
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
0.7
0.4
0.3
VGS = 1.2V
0.2
0
0.5
1
1.5
2
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
0.4
0.3
TA = 150°C
0.2
0
3
T A = 85°C
TA = 25°C
TA = -55°C
0
0.5
1
1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
3
3
3
2.5
VGS = 1.2V
2
VGS = 1.5V
VGS = 1.8V
1.5
VGS = 2.5V
1
VGS = 4.5V
0.5
0
0.5
0.1
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.0
0.6
T A = 125°C
0.1
0
0.2
0.4
0.6
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.8
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
1.8
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
NEW PRODUCT
ADVANCED
INFORMATION
NEW PRODUCT
VGS =2.0V
VGS = 10V
1.6
VGS = 2.5V
ID = 50mA
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5 On-Resistance Variation with Temperature
DMN31D5UFZ
Document number: DS36843 Rev. 2 - 2
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VGS = 4.5V
2.5
TA = 150°C
2
TA = 125°C
T A = 85°C
1.5
TA = 25°C
1
T A = -55°C
0.5
0
0
0.2
0.4
0.6
ID, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
0.8
2
1.6
VGS = 2.5V
ID = 50mA
1.2
VGS = 4.5V
ID = 100mA
0.8
0.4
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
June 2014
© Diodes Incorporated
0.8
0.9
0.7
IS, SOURCE CURRENT (A)
VGS(th), GATE THRESHOLD VOLTAGE (V)
1
0.8
ID = 1mA
0.7
ID = 250µA
0.6
0.5
0.4
0.6
0.5
0.4
TA = 150°C
0.3
T A = 125°C
0.2
TA = 85°C
TA = 25°C
0.1
0.3
-50
0
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
VGS GATE THRESHOLD VOLTAGE (V)
f = 1MHz
C iss
10
Coss
Crss
1
TA = -55°C
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10
100
CT, JUNCTION CAPACITANCE (pF)
0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
1
30
8
6
VDS = 15V
ID = 200mA
4
2
0
0
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
0.9
D = 0.9
D = 0.7
D = 0.5
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
ADVANCED
INFORMATION
NEW PRODUCT
DMN31D5UFZ
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RθJA(t) = r(t) * RθJA
RθJA = 313°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.000001 0.00001
DMN31D5UFZ
Document number: DS36843 Rev. 2 - 2
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 11 Transient Thermal Resistance
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10
100
1000
June 2014
© Diodes Incorporated
DMN31D5UFZ
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Seating Plane
D
2
D
3
D
2
/
e
E
2
E
e
k
x
2
b
2
L
︵ ︶
x
2
L
NEW PRODUCT
ADVANCED
INFORMATION
NEW PRODUCT
1
A
A
X2-DFN0606-3
Dim Min Max
Typ
A
0.36 0.42 0.39
A1
0
0.05 0.02
b
0.10 0.20 0.15
D
0.57 0.67 0.62
D2
0.155 BSC
D3
0.185 BSC
E
0.57 0.67 0.62
E2 0.40 0.60 0.50
e
0.35 BSC
k
0.16 REF
L
0.09 0.21 0.15
L2
0.11 0.31 0.21
All Dimensions in mm
︵ ︶
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
Y
1
Y
C
1
X
2
X
DMN31D5UFZ
Document number: DS36843 Rev. 2 - 2
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Dimensions
C
X
X1
X2
Y
Y1
Value
(in mm)
0.350
0.280
0.350
0.760
0.200
0.600
June 2014
© Diodes Incorporated
DMN31D5UFZ
IMPORTANT NOTICE
NEW PRODUCT
ADVANCED
INFORMATION
NEW PRODUCT
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
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website, harmless against all damages.
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Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
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Copyright © 2014, Diodes Incorporated
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DMN31D5UFZ
Document number: DS36843 Rev. 2 - 2
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June 2014
© Diodes Incorporated
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