ds32247

A Product Line of
Diodes Incorporated
ZXMS6005DG
ADVANCE INFORMATION
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET ® MOSFET
Product Summary
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Features and Benefits
Continuous drain source voltage
On-state resistance
Nominal load current (VIN = 5V)
Clamping Energy
60V
200mΩ
2.8A
490mJ
Description
The ZXMS6005DG is a self protected low side MOSFET with logic
level input. It integrates over-temperature, over-current, over-voltage
(active clamp) and ESD protected logic level functionality. The
ZXMS6005DG is ideal as a general purpose switch driven from 3.3V
or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
Compact high power dissipation package
Low input current
Logic Level Input (3.3V and 5V)
Short circuit protection with auto restart
Over voltage protection (active clamp)
Thermal shutdown with auto restart
Over-current protection
Input Protection (ESD)
High continuous current rating
Lead-Free Finish; RoHS compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Applications
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Lamp Driver
Motor Driver
Relay Driver
Solenoid Driver
Case: SOT-223
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.112 grams (approximate)
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SOT-223
D
S
IN
D
D
IN
S
Device symbol
Top View
Top view
Pin Out
Ordering Information (Note 4)
Product
ZXMS6005DGTA
Notes:
Marking
ZXMS6005D
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZXMS
6005D
ZXMS6005D = Product type Marking Code
®
IntelliFET is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
ZXMS6005DG
Document number: DS32247 Rev. 1 - 2
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A Product Line of
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ZXMS6005DG
ADVANCE INFORMATION
Functional Block Diagram
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Continuous Drain-Source Voltage
Drain-Source Voltage for Short Circuit Protection
Continuous Input Voltage
Continuous Input Current @-0.2V ≤ VIN ≤ 6V
Continuous Input Current @VIN < -0.2V or VIN > 6V
Pulsed Drain Current @VIN = 3.3V
Pulsed Drain Current @VIN = 5V
Continuous Source Current (Body Diode) (Note 5)
Pulsed Source Current (Body Diode)
Unclamped Single Pulse Inductive Energy,
TJ = +25°C, ID = 0.5A, VDD = 24V
Electrostatic Discharge (Human Body Model)
Charged Device Model
Symbol
VDS
VDS(SC)
VIN
Units
V
V
V
IDM
IDM
IS
ISM
Value
60
24
-0.5 ... +6
No limit
│IIN │≤2
5
6
2.5
10
EAS
490
mJ
VESD
VCDM
4000
1000
V
V
IIN
mA
A
A
A
A
®
IntelliFET is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
ZXMS6005DG
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A Product Line of
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ZXMS6005DG
ADVANCE INFORMATION
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation at TA = +25°C (Note 5)
Linear Derating Factor
Power Dissipation at TA = +25°C (Note 6)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 7)
Operating Temperature Range
Storage Temperature Range
Notes:
Symbol
PD
PD
RθJA
RθJA
RθJC
TJ
TSTG
Value
1.3
10.4
3.0
24
96
42
12
-40 to +150
-55 to +150
Units
W
mW/°C
W
mW/°C
°C/W
°C/W
°C/W
°C
°C
5. For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air conditions.
6. For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board, in still air conditions.
7. Thermal resistance between junction and the mounting surfaces of drain and source pins.
Recommended Operating Conditions
The ZXMS6005DG is optimized for use with μC operating from 3.3V and 5V supplies.
Characteristic
Input Voltage Range
Ambient Temperature Range
High Level Input Voltage for MOSFET to be on
Low level input voltage for MOSFET to be off
Peripheral Supply Voltage (voltage to which load is referred)
Symbol
VIN
TA
VIH
VIL
VP
Min
0
-40
3
0
0
Max
5.5
+125
5.5
0.7
24
Unit
V
°C
V
V
V
®
IntelliFET is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
ZXMS6005DG
Document number: DS32247 Rev. 1 - 2
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ZXMS6005DG
ID Drain Current (A)
10
Limited by Over-Current Protection
Limited
by R DS(on)
1
1ms
DC
1s
100ms
100m
10m
10ms
Single Pulse
T amb=25°C
Limit of s/c protection
See Note (a)
1
10
Max Power Dissipation (W)
ADVANCE INFORMATION
Thermal Characteristics
3.0
2.5
See Note (b)
2.0
1.5
1.0
See Note (a)
0.5
0.0
0
25
V DS Drain-Source Voltage (V)
Safe Operating Area
75
100
125
150
Derating Curve
100
T amb=25°C
90
80 See Note (a)
70
60
D=0.5
50
40
30
D=0.2
Single Pulse
20
D=0.05
10
D=0.1
0
100µ 1m
10m 100m
1
10
100
1k
Pulse W idth (s)
Maximum Power (W)
Thermal Resistance (°C/W)
50
Temperature (°C)
Single Pulse
T amb=25°C
100
See Note (a)
10
1
100µ
Transient Thermal Impedance
1m
10m 100m
1
10
Pulse W idth (s)
100
1k
Pulse Power Dissipation
®
IntelliFET is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
ZXMS6005DG
Document number: DS32247 Rev. 1 - 2
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ZXMS6005DG
ADVANCE INFORMATION
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Static Characteristics
Drain-Source Clamp Voltage
Symbol
Min
Typ
Max
Unit
VDS(AZ)
60
–
–
0.7
–
–
–
–
–
1.4
1.6
1.9
2.0
2.2
3.3
65
–
–
1
60
120
–
170
150
–
–
–
–
5
7
70
1
2
1.5
100
200
300
250
200
–
–
–
–
–
–
V
td(on)
tr
td(off)
ff
–
–
–
–
6
14
34
19
–
–
–
–
μs
TJT
ff
150
–
175
10
–
–
°C
°C
Off State Drain Current
IDSS
Input Threshold Voltage
VIN(th)
Input Current
IIN
Input Current While Over Temperature Active
–
Static Drain-Source On-State Resistance
RDS(on)
Continuous Drain Current (Note 4)
ID
Continuous Drain Current (Note 5)
Current Limit (Note 7)
Dynamic Characteristics
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Over-Temperature Protection
Thermal Overload Trip Temperature (Note 8)
Thermal Hysteresis (Note 8)
Notes:
ID(LIM)
μA
V
μA
μA
mΩ
A
A
Test Condition
ID = 10mA
VDS = 12V, VIN = 0V
VDS = 36V, VIN = 0V
VDS = VGS, ID = 1mA
VIN = +3V
VIN = +5V
VIN = +5V
VIN = +3V, ID = 1A
VIN = +5V, ID = 1A
VIN = 3V; TA = +25°C
VIN = 5V; TA = +25°C
VIN = 3V; TA = +25°C
VIN = 5V; TA = +25°C
VIN = +3V
VIN = +5V
VDD = 12V, ID = 1A, VGS = 5V
–
–
7. The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the fully
on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside
saturation makes current limit unnecessary.
8. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal
operating range, so this part is not designed to withstand over-temperature for extended periods..
®
IntelliFET is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
ZXMS6005DG
Document number: DS32247 Rev. 1 - 2
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A Product Line of
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ZXMS6005DG
ID Drain Current (A)
9
4.5V
5V
8
7
4V
6
3.5V
3V
5
2.5V
4
3
2V
2
VIN
1
0
120
T A = 25°C
IIN Input Current (A)
ADVANCE INFORMATION
Typical Characteristics
1.5V
0
1
2
3
4
5
6
7
8
80
60
40
20
0
9 10 11 12
1
2
3
4
5
Input Current vs Input Voltage
Typical Output Characteristic
0.4
T J = 150°C
0.2
T J = 25°C
0.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VTH Threshold Voltage (V)
1.4
ID = 1A
VIN = VDS
1.3
ID = 1mA
1.2
1.1
1.0
0.9
0.8
-75 -50 -25
0
25
50
75 100 125 150
TJ Junction Temperature (°C)
VIN Input Voltage (V)
On-Resistance vs Input Voltage
Threshold Voltage vs Temperature
0.40
10
0.35
0.30
VIN = 3V
0.25
0.20
0.15
VIN = 5V
0.10
0.05
0.00
-75 -50 -25
0
25
50
75 100 125 150
IS Source Curent (A)
RDS(on) On-Resistance ()
0
VIN Input Voltage (V)
VDS Drain-Source Voltage (V)
RDS(on) On-Resistance ()
100
TJ=150°C
1
T J=25°C
0.1
0.01
0.6
0.8
1.0
1.2
VSD Source-Drain Voltage (V)
TJ Junction Temperature (°C)
On-Resistance vs Temperature
0.4
Reverse Diode Characteristic
®
IntelliFET is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
ZXMS6005DG
Document number: DS32247 Rev. 1 - 2
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A Product Line of
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ZXMS6005DG
Drain-Source Voltage (V)
Drain-Source Voltage (V)
ADVANCE INFORMATION
Typical Characteristics - Continued
12
ID=1A
10
VDS
8
6
VIN
4
2
0
-50
0
50
100
150
200
250
300
12
8
6
4
VIN
2
0
-50
0
50
100
150
200
250
300
Time (s)
Time (s)
Switching Speed
Switching Speed
ID Drain Current (A)
ID=1A
VDS
10
VIN = 5V
8
VDS = 15V
RD = 0
6
4
2
0
-2
0
2
4
6
8
10
12
Time (ms)
Typical Short Circuit Protection
®
IntelliFET is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
ZXMS6005DG
Document number: DS32247 Rev. 1 - 2
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September 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMS6005DG
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
D
Q
b1
C
E
SOT223
Dim Min Max Typ
A
1.55 1.65 1.60
A1 0.010 0.15 0.05
b
0.60 0.80 0.70
b1
2.90 3.10 3.00
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
4.60
e1
2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
E1
Gauge
Plane
0.25
Seating
Plane
e1
b
0°
-1
0°
e
A
L
A1
7°
7°
ADVANCE INFORMATION
Package Outline Dimensions
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Y1
Dimensions
X1
X2
Y1
Y2
C1
C2
C1
Y2
X2
Value (in mm)
3.3
1.2
1.6
1.6
6.4
2.3
C2
®
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ZXMS6005DG
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ADVANCE INFORMATION
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
®
IntelliFET is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
ZXMS6005DG
Document number: DS32247 Rev. 1 - 2
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September 2013
© Diodes Incorporated
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